• 제목/요약/키워드: Interfacial deposition

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Comparative Study on Interfacial Traps in Organic Thin-Film Transistors According to Deposition Methods of Organic Semiconductors

  • Park, Jae-Hoon;Bae, Jin-Hyuk
    • 한국응용과학기술학회지
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    • 제30권2호
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    • pp.290-296
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    • 2013
  • We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

후속 열처리에 따른 Cu 박막과 ALD Ru 확산방지층의 계면접착에너지 평가 (Effect of Post-annealing on the Interfacial adhesion Energy of Cu thin Film and ALD Ru Diffusion Barrier Layer)

  • 정민수;이현철;배병현;손기락;김가희;이승준;김수현;박영배
    • 마이크로전자및패키징학회지
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    • 제25권3호
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    • pp.7-12
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    • 2018
  • 차세대 초미세 Cu 배선 적용을 위한 원자층증착법(atomic layer deposition, ALD)을 이용하여 증착된 Ru확산 방지층과 Cu 박막 사이의 계면 신뢰성을 평가하기 위해, Ru 공정온도 및 $200^{\circ}C$ 후속 열처리 시간에 따라 4점굽힘시험으로 정량적인 계면접착에너지를 평가하였고, 박리계면을 분석하였다. 225, 270, $310^{\circ}C$ 세 가지 ALD Ru 공정온도에 따른 계면접착에너지는 각각 8.55, 9.37, $8.96J/m^2$로 유사한 값을 보였는데, 이는 증착온도 변화에 따라 Ru 결정립 크기 등 미세조직 및 비저항의 차이가 적어서, 계면 특성도 거의 차이가 없는 것으로 판단된다. $225^{\circ}C$의 공정온도에서 증착된 Ru 박막의 계면접착에너지는 $200^{\circ}C$ 후속 열처리시 250시간까지는 $7.59J/m^2$ 이상으로 유지되었으나, 500시간 후에는 $1.40J/m^2$로 급격히 감소하였다. 박리계면에 대한 X-선 광전자 분광기 분석 결과, 500시간 후 Cu 계면 산화로 인하여 계면접착 에너지가 감소한 것으로 확인되었다. 따라서 ALD Ru 박막은 계면신뢰성이 양호한 차세대 Cu 배선용 확산방지층 후보가 된다고 판단된다.

드라이클리닝 시스템에서의 세척성과 재오염성 -계면활성제의 종류와 혼합이 미치는 영향- (Detergency and soil Redeposition in a Drycleaning System -The Effect of Surfactant Type and Their Mixture-)

  • 김주연;박정희
    • 한국의류학회지
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    • 제23권7호
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    • pp.1030-1039
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    • 1999
  • The effect of surfactant mixture 9on detergency and soil redeposition in a dry-cleaning system was investigated employing Aerosol OT as an anionic surfactant and Span 80 as a nonionic surfactant. The effect of charge system on soil deposition was also investigated in order to determine the optimum condition at which soil redeposition is minimum,. Soil deposition instead of soil redeposition on cotton, polyester and wool fabrics was measured employing petroleum solvent and perchloroethylene as organic solvents. The results were as follows. 1. Surface tension or interfacial tension was not changed by the addition of any surfactant or surfactant mixtures. In petroleum solvent however interfacial tension between solrent and water decreased when surfactants were added and increased when surfactants were mixed,. 2. The maximum amount of water solubilization increased as the mole fraction of Aerosol OT increased and more water was solubilized in petroleum solvent than in perchloroethylene. 3. The detergency of cotton was greater and the soil deposition rate was lower in Span 80 solution than in Aerosol OT solution. The soil deposition on cotton fabric decreased when water was solubilized in Aersol OT solution 4. The detergency and soil deposition rate of polyester fabric did not change by the surfactant type of the addition of surfactant mixture and soil deposition rate increased bywater solubilization. 5. Soil deposition on wool fabric was very high when Arosol OT was employed in perchloroethylene and the soil deposition did not change greatly by water solubilization.

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Si 기판에서 원자층 화학 기상 증착법으로 제조된 Al2O3 및 ZrO2 유전 박막의 결정학적 특성 및 계면 구조 평가 (Crystallographic and Interfacial Characterization of Al2O3 and ZrO2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate)

  • 김중정;양준모;임관용;조홍재;김원;박주철;이순영;김정선;김근홍;박대규
    • 한국재료학회지
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    • 제13권8호
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    • pp.497-502
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    • 2003
  • Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

Improvement of hole transport from p-Si with interfacial layers for silicon solar cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.239.2-239.2
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    • 2016
  • Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

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알루미나와 실리카/실리콘 기판의 계면 분석 (Analysis of Interfacial Layer between Alumina and Silica/Silicon Substrate)

  • 최일상;김영철;장영철
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.252-254
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    • 2002
  • Metal oxides with high dielectric constants have the potential to expend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx is formed and limits the specific capacitance of the gate structure. We deposisted aluminum oxide and examined the composition of the interfacial layer by employing high-resolution X-ray photoelectron spectroscopy and X-ray reflectivity. We find that the interfacial region is not pure SiO$_2$, but is composed of a complex depth-dependent ternary oxide of $AlSi_xO_y$ and the pure SiO$_2$.

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Carbonate Crystal Growth Controlled by Interfacial Interations of Artifical Cell Membranes

  • Goh, Dai-Young;Ahn, Dong-June
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제2권2호
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    • pp.109-112
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    • 1997
  • Morphology of carbonate crystals grown on the surface of artificial cell membranes was controlled by changing the interfacial chemistry. For octadecyltriethoxysilane (OTE) films with terminal methyl groups interacting little with an aqueous calcium carbonate solution calcite (104) crystals were formed. Polymerized pentacosadiynoic acid (PDA) films with terminal carboxylic acid groups induced deposition of calcite (012) crystals aligned along with each other within a polymer domain. On the other hand, stearyl alcohol (StOH) films with terminal hydroxyl groups induced deposition of aragonite crystals. When PDA was mixed with StOH, the 8:1 PDA:StOH (molar ratio) film produced dominating calcite (012) crystals without any crystal alignment, and the 4:1 mixture film produced minor calcite (012) crystals and major aragonite crystals. For the 2:1, 1:1, 1:2, and 1:4 mixture films, aragonite crystals were dominating. Hence, it is found that the chemical composition at the interface plays a very important role in controlling the morphology of deposited carbonate crystals.

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Effect of the surface modification using MWCNTs with different L/D by two different methods of deposition on the IFSS of single carbon fiber-epoxy resin composite

  • Herrera-Sosa, Minerva L.;Valadez-Gonzalez, Alex;Vazquez-Torres, Humberto;Mani-Gonzalez, Pierre G.;Herrera-Franco, Pedro J.
    • Carbon letters
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    • 제24권
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    • pp.18-27
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    • 2017
  • Multiwall carbon nanotubes (MWCNT) with two different (L/D) aspect ratios ($7{\pm}2{\mu}m/140{\pm}30nm$ and $0.5-2{\mu}m/8-15nm$) were surface treated using nitric acid ($HNO_3$) and polyethyleneimine (PEI) prior to their deposition on carbon fibers (CF). Before the hierarchical reinforcement with CF-MWCNT, the CFs were treated with 3-glycidoxypropyltrime-thoxysilane, a coupling agent (Z6040) and with poly(amidoamine) (PAMAM) a dendrimer containing an ethylenediamine core and amine surface groups. The MWCNT were deposited on the CF using two methods, by electrostatic attraction and by chemical reactions. The changes in the CF surface morphology after the MWCNT deposition were analyzed using SEM, which revealed a higher density and uniform coverage for the PAMAM-treated CF and the short MWCNTs. The interfacial adhesion of the composite materials was evaluated using the single fiber fragmentation technique. The results indicated an improvement in the interfacial shear strength with the addition of the short-MWCNTs treated with acid solutions and grafted onto the surface of the CF fiber using electrostatic attraction.

Catalytic Activity of Au/$TiO_2$ and Pt/$TiO_2$ Nanocatalysts Synthesized by Arc Plasma Deposition

  • Jung, Chan-Ho;Kim, Sang-Hoon;Reddy, A.S.;Ha, H.;Park, Jeong-Y.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.245-245
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    • 2012
  • Syntheses of oxide supported metal catalysts by wet-chemical routes have been well known for their use in heterogeneous catalysis. However, uniform deposition of metal nanoparticles with controlled size and shape on the support with high reproducibility is still a challenge for catalyst preparation. Among various synthesis methods, arc plasma deposition (APD) of metal nanoparticles or thin films on oxide supports has received great interest recently, due to its high reproducibility and large-scale production, and used for their application in catalysis. In this work, Au and Pt nanoparticles with size of 1-2 nm have been deposited on titania powder by APD. The size of metal nanoparticles was controlled by number of shots of metal deposition and APD conditions. These catalytic materials were characterized by x-ray diffraction (XRD), inductively coupled plasma (ICP-AES), CO-chemisorption and transmission electron microscopy (TEM). Catalytic activity of the materials was measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. We found that Au/$TiO_2$ is reactive, showing 100% conversion at $110^{\circ}C$, while Pt/$TiO_2$ shows 100% conversion at $200^{\circ}C$. High activity of metal nanoparticles suggests that APD can be used for large scale synthesis of active nanocatalysts. We will discuss the effect of the structure and metal-oxide interactions of the catalysts on catalytic activity.

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