• Title/Summary/Keyword: Interface reaction

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극미세 Bi-Sn 솔더 범프와 UBM과의 계면반응

  • Kang Un-Byoung;Kim Young-Ho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.68-71
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    • 2003
  • The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

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Growth Behavior of Intermetallic Compounds in Sn-Ag-Bi/Cu Solder Joints during Aging (Sn-Ag-Bi/Cu 솔더 조인트의 aging시 금속간화합물 성장 거동)

  • Han Sang Uk;Park Chang Yong;Heo Ju Yeol
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.133-137
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    • 2003
  • The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

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Chemical Vapor Deposition of Tungsten on TiN Surface (TiN 표면위에 텅스텐의 화학증착)

  • Yi, Chung;Rhee, Shi-Woo;Lee, Kun-Hong
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.4
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    • pp.49-57
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    • 1992
  • Tungsten film was deposited on the TiN surface in a low pressure chemical vapor deposition reactor and chemical reaction mechanism between TiN surface and ($WF_{6}\;and\;SiH_{4}$ was studied. Interaction of ($WF_{6}\;or\;SiH_{4}$ with TiN surface and tungsten was deposited more easily. $WF_6$ reacted with TiN activated the TiN surface to form volatile TiF_4$ and tungsten nuclei were formed. ($SiH_{4}$ was dissociated on the TiN surface to form silicon nuclei. From RBS and AES analysis, we could not detect the impurities(such as Si or TiF$_x$)at the interface between tungsten and TiN. The adhesion at the W/TiN interface became poor when the deposition temperature was below 275$^{\circ}C$.

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The Current Status and Future Outlook of Quantum Dot-Based Biosensors for Plant Virus Detection

  • Hong, Sungyeap;Lee, Cheolho
    • The Plant Pathology Journal
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    • v.34 no.2
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    • pp.85-92
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    • 2018
  • Enzyme-linked immunosorbent assay (ELISA) and polymerase chain reaction (PCR), widely used for the detection of plant viruses, are not easily performed, resulting in a demand for an innovative and more efficient diagnostic method. This paper summarizes the characteristics and research trends of biosensors focusing on the physicochemical properties of both interface elements and bioconjugates. In particular, the topological and photophysical properties of quantum dots (QDs) are discussed, along with QD-based biosensors and their practical applications. The QD-based Fluorescence Resonance Energy Transfer (FRET) genosensor, most widely used in the biomolecule detection fields, and QD-based nanosensor for Rev-RRE interaction assay are presented as examples. In recent years, QD-based biosensors have emerged as a new class of sensor and are expected to open opportunities in plant virus detection, but as yet there have been very few practical applications (Table 3). In this article, the details of those cases and their significance for the future of plant virus detection will be discussed.

Algorithm for solving fluid-structure interaction problem on a global moving mesh

  • Sy, Soyibou;Murea, Cornel Marius
    • Coupled systems mechanics
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    • v.1 no.1
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    • pp.99-113
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    • 2012
  • We present a monolithic semi-implicit algorithm for solving fluid-structure interaction problem at small structural displacements. The algorithm uses one global mesh for the fluid-structure domain obtained by gluing the fluid and structure meshes which are matching on the interface. The continuity of velocity at the interface is automatically satisfied and the continuity of stress does not appear explicitly in the global weak form due to the action and reaction principle. At each time step, we have to solve a monolithic system of unknowns velocity and pressure defined on the global fluid-structure domain. Numerical results are presented.

Physics-based Real-time Simulation of Deformable Body for Haptic Interface (햅틱 인터페이스를 위한 물리기반 변형체 실시간 시뮬레이션)

  • Jun, Seong-Ki;Choi, Jin-Bok;Cho, Maeng-Hyo
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.557-562
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    • 2004
  • For constructing virtual environment it is more natural to model object as deformable body than as rigid body. High accuracy of simulation of model and low-latency computational cost for real-time simulation should be guaranteed. We pre-compute Green function through finite element analysis of deformable body and it is possible to simulate deformation of body in real-time environment using Capacitance Matrix Algorithm. Also, the capacitance matrix algorithm enables to construct the haptic rendering which serves the reaction force through a haptic device. The Newmark scheme is used for the more realistic haptic rendering and dynamic simulation in real-time.

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A review on electrically debonding Adhesives (전기해체 접착제)

  • Jeong, Jongkoo
    • Journal of Adhesion and Interface
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    • v.19 no.2
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    • pp.84-94
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    • 2018
  • Electrically debonding adhesives[EDA], one of the controlled delamination materials[CDM] is reviewed. CDM can be defined as the ability to separate adhesive bonded assemblies without causing damage to the substrates. Its application includes electronics, medical surgery, dentistry, building and general manufacturing where the opportunity to separate assemblies is important. There are several important mechanisms of EDAs; faradaic reaction, phase separation and anode detachment, cathodic debonding, gas emission mechanism, and mechanical stresses. These mechanisms are reviewed with various research results. Since the mechanism behind the electrochemical debonding of adhesives is not well understood, this review aims to help the research scientists in the industries. Finally, new applications of EDA are introduced as new business opportunity.

Cross-sectional radiation type micromixer to mixed interface using PZT (PZT를 이용한 계면 교차 방향 방사형 마이크로믹서)

  • Heo, Pil-Woo;Kim, Deok-Jong;Kim, Jae-Yun;Park, Sang-Jin;Yun, Eui-Soo;Koh, Kwang-Sik
    • 유체기계공업학회:학술대회논문집
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    • 2003.12a
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    • pp.121-125
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    • 2003
  • Micromixer plays an important role in Bio-MEMS or ${\mu}-TAS$. Mixing is generally generated by turbulence and interdiffusion of two fluids. Because of low Reynolds number(Re << 2000) in ${\mu}-channel$, it is difficult to generate turbulence, so mixing mainly depends on interdiffusion. Thus long channel distance is required to mix two different fluids. To reduce the channel length required for mixing, we propose the a new active ${\mu}-mixer$ that two fluids are effectively mixed in ${\mu}-channel$ by the ultrasonic wave which is generated by PZT. The ultrasonic wave is radiated into a chamber in the cross-section directional direction to interface with the two fluids. The two fluids are positioned one on top of the other. Mixing state is measured by the changing of color due to the reaction of NaOH and phenolphtalein.

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Reformation of Dielectric Property in interface between epoxy and Cu (Epoxy-Cu간 접촉면에서의 절연특성 개선)

  • 송재주;김성홍;정남성;황종선;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.9-12
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    • 2000
  • Insulators for high-voltage and large-power should be endured mechanically the weight of mold bushing itself and the force of pushed from contact with circuit breaker and conductor. But dielectric breakdown could be occurred result from the external circumstances and internal factors such as chemical reaction, partial discharge, change of temperature and the relation of temperature-time in process of casting. Therefore, to get rid of external and internal factors of dielectric breakdown. Furthermore, to prevent the internal cracks, void, cavity which resulted from the contraction originated on the interface between copper and epoxy resin, formed semi-conductive layer with partially carbon painted on copper bar. The PD properties and the insulation qualities of epoxy molded insulators were improved by roles of cushions for the direction of diameter and natural sliding effects as like separated from conductor for the direction of length.

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Study on the Cu/Polyimide interface using XPS: Initial growth of Cu sputter-deposited on the polyimide at high temperature (II) (XPS를 이용한 Cu/Polyimide의 계면에 관한 연구: 고온에서 증착한 Cu의 초기성장과 정(II))

  • 이연승;황정남
    • Journal of the Korean Vacuum Society
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    • v.7 no.2
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    • pp.135-140
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    • 1998
  • We investigated the initial growth mode of Cu deposited on polyimide at high temperature($350^{\circ}C$) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.

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