• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.87-92
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• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.65-70
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• 2008

The mechanical shear strength of BGA(Ball Grid Array) solder joints under high impact loading was investigated. The Sn-37Pb solder balls with a diameter of $500{\mu}m$ were placed on the pads of FR-4 substrates with ENIG(Electroless Nickel Immersion Gold) surface treatment and reflowed. For the High Temperature Storage(HTS) test, the samples were aged a constant testing temperature of $120^{\circ}C$ for up to 250h. After the HTS test, high speed shear tests with various shear speed of 0.01, 0.1, 1, 3 m/s were conducted. $Ni_3Sn_4$ intermetallic compound(IMC) layer was observed at the solder/Ni-P interface and thickness of IMC was increased with aging process. The shear strength increased with increasing shear speed. The fracture surfaces of solder joints showed various fracture modes dependent on shear speed and aging time. Fracture mode was changed from ductile fracture to brittle fracture with increasing shear speed.

• Journal of the HCI Society of Korea
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• v.5 no.2
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• pp.7-14
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• 2010

Urban Data collected through Sensor Network is becoming crucial to understand and analyse a city. Thus, the Ubiquitous Sensor Network builds the foundation of the u-City development. This research aims to develop an energy monitoring application with an intuitive visualization environment which integrates energy usage information on top of urban geospatial information. Such a system will be able to facilitate effective energy supply plan at the early stages of urban planning, and eventually to encourage citizens to conserve energy by giving them real time monitoring information in an easy to understand visual environment. The system provides multiple layers of energy-related information coupled with the geospatial information layer in order to accommodate multiple viewpoints. On the other hand, the system provides logical Level of Detail control based on urban spatial information hierarchy. We defined the system concept and functions, and designed the data structure and the methods of information visualization. This paper presents the visualization methods, data structure, interactions scenarios which combines spacial information, E-GIS data and the energy related sensor data. Furthermore this research tries to introduce the concept of Social Sensor Networking to enhance the monitoring quality.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.6
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• pp.654-663
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• 2004

Statement of problem. According to the fracture pattern in several reports, fractures most frequently occur in the interface between the ceromer and the substructure. Purpose. The aim of this in vitro study was to compare the macro shear bond strength and microshear bond strength of a ceromer bonded to a fiber reinforced composite (FRC) as well as metal alloys. Material and methods. Ten of the following substructures, type II gold alloy, Co-Cr alloy, Ni-Cr alloy, and FRC (Vectris) substructures with a 12 mm in diameter, were imbedded in acrylic resin and ground with 400, and 1, 000-grit sandpaper. The metal primer and wetting agent were applied to the sandblasted bonding area of the metal specimens and the FRC specimens, respectively. The ceromer was placed onto a 6 mm diameter and 3 mm height mold in the macro-shear test and 1 mm diameter and 2 mm height mold in the micro-shear test, and then polymerized. The macro- and micro-shear bond strength were measured using a universal testing machine and a micro-shear tester, respectively. The macro- and micro-shear strength were analyzed with ANOVA and a post-hoc Scheffe adjustment ($\alpha$ = .05). The fracture surfaces of the crowns were then examined by scanning electron microscopy to determine the mode of failure. Chi-square test was used to identify the differences in the failure mode. Results. The macro-shear strength and the micro-shear strength differed significantly with the types of substructure (P<.001). Although the ceromer/FRC group showed the highest macroand micro-shear strength, the micro-shear strength was not significantly different from that of the base metal alloy groups. The base metal alloy substructure groups showed the lowest mean macro-shear strength. However, the gold alloy substructure group exhibited the least micro-shear strength. The micro-shear strength was higher than the macro-shear strength excluding the gold alloy substructure group. Adhesive failure was most frequent type of fracture in the ceromer specimens bonded to the gold alloys. Cohesive failure at the ceromer layer was more common in the base metals and FRC substructures. Conclusion. The Vectris substructure had higher shear strength than the other substructures. Although the shear strength of the ceromer bonded to the base metals was lower than that of the gold alloy, the micro-shear strength of the base metals were superior to that of the gold alloy.

• International Journal of Highway Engineering
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• v.15 no.4
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• pp.85-94
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• 2013

PURPOSES: The performance of tack coat, commonly used for layer interface bonding, is affected by application rate and curing time. In this study, bonding strength tests were performed according to the application rate and curing time of asphalt emulsion. Based on finding from this study, optimum application rates and curing times are proposed. METHODS: In order to investigate bonding characteristic of asphalt emulsion, tests were performed on both asphalt concrete pavement and portland concrete pavement. Also, asphalt emulsions were tested at the application rate of 0, 0.2, 0.4, 0.6, and $0.8{\ell}/m^2$ and at the curing time of 0, 0.5, 1, 2, and 24 hours. Pull-off test and shear bonding strength test, which commonly used for bonding strength measurement of asphalt emulsion, were adopted for this study. To assess field performance under different testing condition, asphalt emulsions were applied to in-service pavement. Throughout coefficient of determination analysis between material index properties from asphalt emulsion and mechanical response from bonding strength tests, performance correlativity was analyzed. RESULTS: Test results show that optimum application rate for asphalt overlay on asphalt concrete pavement (AOA) and asphalt overlay on concrete pavement (AOC) was $0.4{\sim}0.5{\ell}/m^2$ and $0.3{\sim}0.5{\ell}/m^2$, respectively. According to the curing time increment, tensile strength and shear strength of AOC were increased to 22~44% and 20~39%, respectively. AOA case also show strength increment in tensile strength (42%) and shear strength (9%). We tested the applicability of tack coat materials at the field sites, and our findings demonstrated that the bonding (for D and E) and rapid curing (for B, C, and D, E) performances were superior than others. Among material index properties, there was a high correlation between penetration ratio and bonding strength test result. CONCLUSIONS : Result show that interlayer bonding strength was affected by asphalt emulsion type, application rate and curing time. AOC required slightly higher application ($0.1{\ell}/m^2$) than AOA. Both AOA and AOC cases show higher strength at longer curing time. Up to 2hours of curing, rapid strength increments were observed, but strength increment ratio was decreased after 2hours of curing. From the observed correlation between penetration ratio and bonding strength, it is expected that penetration ratio can be used as one of important factors affecting bonding strength analysis.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.