• Journal of Technologic Dentistry
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• v.29 no.2
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• pp.213-223
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• 2007

The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. The adhesion between metal substructure and dental porcelain is related to the diffusion of oxygen to the reaction layer formed on cast-metal surface during firing. The purposed of this investigation was to study the effects of gold based bonding agent on Ni-Cr alloy-ceramic adhesion between porcelain matrix, gold based bonding agent and metal substructure interface. gold based bonding agent have been applied as an intermediate layer between a metal substructure and a ceramic coating. gold based bonding agent(Aurofilm NP, Metalor, Swiss) was applied on Ni-Cr alloy surface by four method. Surfaces only air abraded with 110${\beta}\neq$ Al2O3 particles were used as control. metal ceramic adhesion was evaluated by a biaxial flexure test(N=5) and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that the layering sequence of gold based bonding agent is very important and can improve porcelain adherence to PFM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.199-204
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• 2009

The effect of temperature on ACF thermocompression bonding for FPD assembly was investigated, It was found that Au bumps on driver IC's were not bonded to the glass substrate when the bonding temperature was below $140^{\circ}C$ so bonds were made at temperatures of $163^{\circ}C$, $178^{\circ}C$ and $199^{\circ}C$ for further testing. The bonding time and pressure were constant to 3 sec and 3.038 MPa. To test bond reliability, FPD assemblies were subjected to thermal shock storage tests ($-30^{\circ}C$, $1\;Hr\;{\leftrightarrow}80^{\circ}C$, 1 Hr, 10 Cycles) and func! tionality was verified by driver testing. It was found all of FPDs were functional after the thermal cycling. Additionally, Au bumps were bonded using ACF's with higher conductive particle densities at bonding temperatures above $163^{\circ}C$. From the experimental results, when the bonding temperature was increased from $163^{\circ}C$ to $199^{\circ}C$, the curing time could be reduced and more conductive particles were retained at the bonding interface between the Au bump and glass substrate.

• Structural Engineering and Mechanics
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• v.74 no.5
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• pp.589-600
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• 2020

The bonding interface of the concrete slab track and cement-asphalt mortar layer plays an important role in transferring load and restraining the track slab's deformation for slab track structures without concrete bollards in high-speed railway. However, the interfacial bond-slip behavior is seldom considered in the structural analysis; no credible constitutive model has been presented until now. Elaborating the field tests of concrete to cement-asphalt mortar interface subjected to longitudinal and transverse shear loads, this paper revealed its bond capacity and failure characteristics. Interfacial fractures all happen on the contact surface of the concrete track slab and mortar-layer in the experiments. Aiming at this failure mechanism, an interfacial mechanical model that employed the bilinear local bond-slip law was established. Then, the interfacial shear stresses of different loading stages and the load-displacement response were derived. By ensuring that the theoretical load-displacement curve is consistent with the experiment result, an interfacial bond-slip constitutive model including its the corresponding parameters was proposed in this paper. Additionally, a finite element model was used to validate this constitutive model further. The constitutive model presented in this paper can be used to describe the real interfacial bonding effect of slab track structures with similar materials under shear loads.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.205-205
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• 2011

The self-assembly of ${\gamma}$-phenylalanine on Au(111) at 150 K was investigated using scanning tunneling microscopy (STM). Phenylalanine can potentially form two-dimensional (2D) molecular networks through hydrogen bonding (through the carboxyl and amino groups) and ${\pi}-{\pi}$ stacking interactions (via aromatic rings). We found that ${\gamma}$-phenylalanine molecules self-assembled on Au(111) surfaces into well-ordered structures such as ring-shaped clusters (at low and intermediate coverages) and 2D molecular domains (intermediate and monolayer coverages), whereas ${\alpha}$-phenylalanine molecules formed less-ordered structure on Au(111). The self-assembly of ${\gamma}$- but not ${\alpha}$-phenylalanine may be related to the flexibility of the carboxyl and amino groups in the molecule. Moreover, as expected, the 2D molecular network of ${\gamma}$-phenylalanine on Au(111) was mediated by a combination of hydrogen bonding and ${\pi}-{\pi}$ stacking interactions.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.127-135
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• 1994

We investigated the bonding interfaces of directly-bonded Si-Si and $Si-Sio_{2}$/Si wafer pairs. By the angle lapping-delineation, anisotropic etching, and (FIR)-TEM observation methods, we studied on the interface defects and the transient region originated from the interface stress, the various types of voids, the formation and stability of interfacial oxide. We also compared the interface image of the bonded $Si-Sio_{2}$ with that of a typically grown $Si-Sio_{2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• Journal of Technologic Dentistry
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• v.33 no.4
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• pp.349-357
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• 2011

Purpose: In this study, for the reasons of observing the changes when using bonding agent with Ni-Cr alloy and Co-Cr alloy and using VM13 and Vintage MP ceramic which have the disparity in coefficient of thermal expansion, it is carried out to evaluate the characteristics of the bonding agent through the analysis of the interface between metal and ceramic and the analysis of bond strength by variable. Methods: The surface treatment was performed on the two kinds of alloy(Ni-Cr alloy and Co-Cr alloy) specimens, which were sandblasted and were treated with bonder application. The metal-ceramic interfaces were analyzed with EPMA in order to ionic diffusion, and the shear test was performed. Results: As a result of observation of metal-ceramic interfacial properties, it was observed that Cr atoms were spread from the alloy body to the ceramic floor in the specimen of Group B. It was also seen that Cr, W atoms were spread from the alloy body to the ceramic floor in the specimen of Group S. In consequence of observing Shear bond strength, it was calculated that the specimen of BSV was 27.75(${\pm}11.21$)MPa, BSM was 27.02(${\pm}5.23$)MPa, BCV was 30.20(${\pm}5.99$)MPa, BCM was 27.94(${\pm}10.76$)MPa, SSV was 20.83(${\pm}2.58$)MPa, SSM was 23.98(${\pm}3.94$)MPa, SCV was 32.32(${\pm}4.68$)MPa, and SCM was 34.54(${\pm}10.63$)MPa. Conclusion: In the metal-ceramic interface of Bellabond plus sample group, diffusion of Cr atoms was incurred and diffusion of C Cr atoms and W atoms in the sample group of $Starloy{(R)}\;C$ was observed. Using bonding agent showed the higher bond strength than using the sand blasting treatment. In the Bellabond plus alloys, the specimen group with the use of binding materials showed higher shear bond strength, but didn't show statistically significant differences (p>0.05). In the $Starloy{(R)}\;C$ alloys, the specimen group with the use of binding materials showed higher shear bond strength and statistically significant differences(p<0.05). In terms of VM13 ceramic, it was in the Bellabond plus alloys that the high shear bond strength was showed, but there's no statistically significant differences(p>0.05). In terms of Vintage MP ceramic, it was in the $Starloy{(R)}\;C$ alloys that the high shear bond strength was showed and statistically significant differences(p<0.05). Metal-ceramic to fracture of the shear strength measurements and an analysis of all aspects of military usage fracture of the composite, respectively.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.665-670
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• 2000

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si$\mid$$\mid$Si and Si$\mid$$\mid$$SiO_2/Si$ bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was ap­pplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuous­tly with the increase of annealing temperature.