• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• 조명전기설비학회논문지
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• 제28권1호
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• pp.36-44
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• 2014

The conventional central photo voltaic inverters have several problems. First, shadow problem in each solar panel, and high DC voltage problem from each panel because of concentration to one central inverter. Therefore, module integrated inverter is proposed to solve these problems. The inverter should be small and cost effective. The cost and size in the inverter depend on the inductor. So the switching frequency should be increased to reduce the inductor and total size, but there is a problem in efficiency because of the losses in turn-on and turn-off. In the paper, the critical conduction mode(CRM) switching method is adopted to reduce the switching loss and interleaving method is proposed to increase the efficiency in Flyback converter. Finally, the validity of the proposed scheme is investigated with simulated and experimental results for a prototype system rated at 200W.

• 대한전자공학회논문지SD
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• 제37권10호
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• pp.17-24
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• 2000

면적 효율이 높은 대칭 구조를 갖는 이중층 나선형 인덕터를 제시하였으며 그 특성을 일반적인 단일층 나선형 인덕터와 비교하여 분석하였다. 일반적인 예측과 달리 이중층 인덕터의 상하층 유도 계수가 인덕터의 권선수와 함께 증가하는 것을 확인하였고 이로 인하여 동일한 면적에 대하여 이중층 인덕터은 권선수에 따라 단일층에 비해 2.5-4배 정도 높은 인덕턴스값을 나타내었다. 또한 같은 인덕턴스 값에 대하여 이중층 구조로 단일층 구조 보다 높은 충실도를 가짐을 확인하였다. 본 논문에서는 이중층 나선형 인덕터가 단일층 나선형 인덕터보다 면적 효율과 충실도 측면에서 우수하여 RF집적회로에 활용되기에 적절한 보다 구조임을 제시하고자 한다. 제시된 이중층 나선형 인덕터는 완벽한 대칭 구조를 갖도록 설계되었으며 측정 결과에서 이와 같은 특성을 확인할 수 있었으며, 고주파용 초크로서 활용가능성을 확인하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2011년도 전력전자학술대회
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• pp.25-26
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• 2011

In some cases of grid connected system using photovoltaic modules, high voltage step up ratio is required. In this paper, non-isolated 2-stage cascaded boost converter with coupled inductor is proposed. Due to reduce the input current ripple and size of the inductor by using coupled inductor method, this topology is suitable for MIC(Module Integrated Converter). The operational characteristic of the proposed topology is verified through the theorical analysis, simulation and experimental waveform.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제49권6호
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• pp.371-379
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• 2000

The 4-pole linear homopolar synchronous motor (LHSM), so called linear inductor motor, is composed of the figure-of-eight shaped 3-phase armature windings, DC field windings, and the segmented secondary with the transverse bar track. To reduce the calculation time, the simplified 3D finite element model with equivalent reluctance and/or permanent magnet is presented. To obtain a clear understanding, propriety and usefulness of the developed model, we compare with the results of simplified 3D FEA, general 3D FEA and test. Consequently, the results of simplified and 3D FEM analysis are nearly identical, but much larger than that of static test at d-axis armature excitation. Therefore the improved FEA model, such as full model with half slot, is needed for the precise analysis.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.283-286
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• 1999

A 2㎓, low noise, low power CMOS voltage-controlled oscillator (VCO) with an integrated LC resonator is presented. The design of VCO relies heavily on the on-chip spiral inductor. An optimized spiral inductor with Q-factor of nearly 8 is achieved and used for the VCO. The simulated result of phase noise is as low as -l14 ㏈c/Hz at an offset frequency of a 600KHz from a 2㎓ carrier frequency. The VCO is tuned with standard available junction capacitors, resulting in an about 400MHz tuning range (20%). Implemented in a five-metal 0.25${\mu}{\textrm}{m}$ standard CMOS process, the VCO consumes only 2㎽ from a single 2.5V supply. It occupies an active area of 620${\mu}{\textrm}{m}$$\times$720${\mu}{\textrm}{m}$.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.83-87
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• 2003

In the present paper we suggested a parallel branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on p-type silicon wafer (5∼15Ω-cm) under the standard CMOS process and it showed a enhanced qualify(Q) factor by more than 10 % with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with conventional spital inductors

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• 전력전자학회논문지
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• 제11권1호
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• pp.56-64
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• 2006

지난 수년 동안 고집적 변압기를 이용한 고집적 전원장치가 연구되어 왔다 이러한 고집적 전원장치를 구현하기 위해 직렬 공진컨버터가 꾸준히 적용되어 왔으며, 본 논문에서는 고집적 LLCT 평면 변압기를 적용한 Half-bridge 직렬 공진컨버터에 대해 서술하였다. 뿐만 아니라 고집적 LLCT 평면 변압기 구조에 대해 FEMM을 이용하여 해석하였고, 이론적인 해석과 300W급 시제품을 제작하여 실험 결과를 증명하였다.