• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.143-146
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• 2008

In this study the thermal impact characteristics by forest fire are extensively investigated using temperature controlled ovens. The test conditions for thermal impact damage are simulated according to the characteristics of natural forest fire. The test pieces are suspension porcelain insulators made by KRI in 2005 for transmission lines. In the thermal impact cycle tests with $300\;^{\circ}C$ thermal impact gradient (-70 to $230\;^{\circ}C$), cycling in 10 minute periods, no critical failures occurred in the test samples even with long cycle times. But in tests with thermal impact gradient from room temperature to $200-600\;^{\circ}C$, cycling in 10 to 30 minute periods, there were critical failures of the porcelain insulators according to the thermal impact gradient and quenching method. In the case of thermal impact by forest fire, it was found of that duration time is more important than the cycling time, and the initiation temperature of porcelain insulator failures is about $300\;^{\circ}C$, in the case of water quenching, many cracks and fracture of the porcelain occurred. It was found that the thermal impact failure is closely related to the displacement in the cement by thermal stress as confirmed by simulation. It was estimated that the initiation displacement by the thermal impact of $300\;^{\circ}C$ is about 0.1 %. Above 1% displacement, it is expected that the most porcelain insulators would fail.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.3
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• pp.202-210
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• 2016

A thermal barrier coating (TBC) has been widely applied to machine components working under high temperature as a thermal insulator owing to its critical financial and safety benefits to the industry. However, the nondestructive evaluation of TBC damage is not easy since sensing of the microscopic change that occurs on the TBC is required during an evaluation. We designed an eddy current probe for evaluating damage on a TBC based on the finite element method (FEM) and validated its performance through an experiment. An FEM analysis predicted the sensitivity of the probe, showing that impedance change increases as the TBC thermally degrades. In addition, the effect of the magnetic shield concentrating magnetic flux density was also observed. Finally, experimental validation showed good agreement with the simulation result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.50-55
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• 2020

Porcelain insulators have been used for a long time in 154 kV power transmission lines. They are likely to be exposed to sudden failure because of product deterioration. This study was conducted to evaluate the quality of porcelain insulators. After stresses were applied, the damaged regions of aged insulators were investigated in terms of chemical composition, material structure, and other properties. For porcelain insulators that were in service for a long time, the mechanical failure load was 126 kN, whereas the average mechanical failure load was 167.3 kN for new products. It was also determined that corrosion occurred at the metal pin part due to the penetration of moisture into the gap between the pin and the ceramic. Statistical analyses of failure were performed to identify the portion of the insulators that were broken. Cristobalite porcelain insulators fabricated without alumina additives had a high failure rate of 54% for the porcelain component. In the case of the addition of Alumina (Al₂O₃) to the porcelain insulators to improve the strength of the ceramic component, a more frequent damage rate of the cap and pin of 73.3% and 27%, respectively, was observed. This study reports on the material component of SiO₂ and the percentage of alumina added, with respect to the mechanical properties of porcelain insulators.

• Structural Engineering and Mechanics
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• v.72 no.6
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• pp.785-796
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• 2019

Power transmission substations are susceptible to potential damage under seismic excitations. Two of the major seismic failure modes in substation supplies are: the breakage of brittle insulator, and conductor end fittings. This paper presents efficient isolation strategies for seismically strengthening of a two-item set of equipment including capacitive voltage transformer (CVT) adjacent to a Lightning Arrester (LA). Two different strategies are proposed, Case A: implementation of base isolation at the base of the CVT, while the LA is kept fixed-base, and Case B: implementation of base isolation at the base of the LA, while the CVT is kept fixed-base. Both CVT and LA are connected to each other using a cable during the dynamic excitation. The probabilistic seismic behavior is measured by Incremental Dynamic Analysis (IDA), and a series of appropriate damage states are proposed. Finally, the fragility curves are derived for both the systems. It is found that Friction Pendulum System (FPS) isolator has the potential of decreasing flexural stresses caused by intense ground motions. The research has shown that when the FPS is placed under LA, i.e. Case B (as oppose to Case A), the efficiency of the system is improved in terms of reducing the forces and stresses at the bottom of the porcelain. Several parametric studies are also performed to determine the optimum physical properties of the FPS.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.585-587
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• 1999

The rotorbody and rotor winding of generator are isolated by an insulator and the output characteristic of the generator is maintained in the best states. Only when an insulation resistance between them is over a certain extent. The aim of this research is to develop the simulator for rotor earth fault detection circuits. It is composed of the power resource which is to control the virtual field voltage, stepping motor which is to give virtual ground. It is possible to inspect with the device and program developed in this study in the same as real operating condition and evaluate the integrity of generator rotor through the function of data acquisition and graphic output. If these technologies will be applied to the inspection, prevent a damage of the generator and contribute to improve maintenance reliance.

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.445-448
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• 2004

Radio frequency and microwave dielectric heating are well-known electroheating methods, used in industrial applications where non electrically conducting materials are to be heated, dried or otherwise processed. The major reason for considering this technique for any process is based on its unique ability to transfer heat into the volume of an electrically non conducting material such as insulator directly, rather than, via a surface. Conventional heating must first bring heat to the product surface and there after it depends on the physical characteristics and condition of the material as to how effectively this heat is transmitted into the mass. The product would suffer surface damage before the main body is adequately processed. Dielectric heating is applied to enhance conventional heating methods and to drastically shorten the required processing duration. Although the use of dielectric heating has been a well proven technique for several years in some industries, its application in the preheating of FRP has been limited by the insufficient experience. In this paper a method is described for uniform radio frequency heating of preheating of FRP.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Journal of the Korean GEO-environmental Society
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• v.18 no.1
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• pp.5-12
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• 2017

The damage of the tunnel lining on the cold regions can be represented by cracks and leaks caused by freezing of ground water. However, domestically, the relevant construction guidelines are not provided so far. Thus, in this research, the mechanical behavior and thermal conductivity of designated tunnel area are measured using instrumentation system installed in the lining concrete inside tunnels in order to analysis their behavior with regard to temperature variations. Previous research mainly focused on the effect of temperature on the tunnel lining based on the air and initial ground temperature at urban regions. Thus, this study analyzes effects of air temperature and initial ground temperature of designated tunnel area at the cold regions. The temperature of the groundwater at the backfill of the tunnel lining are analyzed to evaluate the heating element. Numerical analyses are performed to evaluate the heating element with regard to the various initial ground temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.