• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.287-297
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• 2020

This study examined ways of improving the internal insulation performance of aging university buildings, and to enhance the convenience of occupants in university buildings and the insulation effect of aging buildings. This research was conducted to solve the problem of continuous requests for improving the insulation performance of office workers in the Nehemiah Hall building of Handong University. The results showed that the internal temperature of Nehemiah Hall was low compared to the internal temperature of the adjacent building. Considering the characteristics of the building, the university chose insulating materials under the theme of internal insulation. The experiment was conducted by installing internal wall insulation used in the market by producing a model room that miniaturized the university professor's office. Based on the experimental results, an economic evaluation was conducted to analyze the insulation effect by measuring the heating time and actual heat transmission coefficient. An economic evaluation was conducted by experiment and theory and on a winter and summer basis. According to the research, when an Isopink (30 T) was introduced as an internal insulation material in 60 offices of Nehemiah Hall, it could save up to 1,071,600 won in total during the winter season and 109,200 won during the summer season.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.120-125
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• 2002

AC powder EL devices were fabricated by screen printing method with the dielectric materials in insulating layer and the electrical resistivity of rear electrode. Brightness and current density were measured at voltage range of 50∼300 $V_{rms}$ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Brightness and current density were measured by luminometer and multimeter. Also, dielectric constant for dielectric layer was measured by impedance analyser after preparing thick film. Dielectric constant was improved with amount of $TiO_2$ to $BaTiO_3$ powder. By applying such a process to dielectric layer of low cost AC powder EL device, brightness was improved to 50 cd/$m^2$ at similar current density. Dielectric constant $BaTiO_3$ powder by solution combustion process is better than commercial $BaTiO_3$ powder. By applying to that of low power consumption AC powder EL device, brightness was improved to 85 cd/$m^2$. Brightness of AC powder EL device was relatively decreased by control of electrical resistivity of rear electrode, current density was also decreased.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of Korean Tunnelling and Underground Space Association
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• v.13 no.4
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• pp.319-345
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• 2011

In case of tunnels in cold regions, a freeze of groundwater around tunnel may act as a barrier of tunnel drainage in winter, or may cause the inner extrusion of lining. In spite of that, a design of insulation for preventing the frost damage of tunnel lining has not been introduced in Korea, while foreign countries such as Norway and so on have a standard on insulation. In this study, a few freezing cases of road tunnels have been reviewed, and the results show that the freezing protection is necessary. In order to characterize the thermal distribution in the tunnel, following measurements have been performed at Hwa-ak tunnel; the temperature distribution by longitudinal lengths, the internal temperature of lining and the temperature distribution of the ground under pavement. From these measurements, the characteristics of the tunnel's internal temperature distribution due to temperature change in the air has been analyzed. Based on the measurement results on the temperature distribution at Hwa-ak tunnel, thermal flow tests on the rock specimen with and without insulation have been performed in the artificial climate chamber to investigate the performance of the insulation. Also, a number of 3D numerical analyses have been performed to propose appropriate insulation and insulation thicknesses for different conditions, which could prevent the frost damage of tunnel lining. As a result of the numerical analysis, air freezing index of 291$^{\circ}C{\cdot}$ Hr has been suggested as the threshold value for freezing criteria of groundwater behind the tunnel lining.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.7
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• pp.16-19
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• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.426-438
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• 2023

Lithium-sulfur batteries, recently attracting attention as next-generation batteries, have high energy density but are limited in application due to sulfur's insulating properties, shuttle phenomenon, and volume expansion. This study used an economical and simple vacuum filtration method to prepare a freestanding electrode without a binder and collector. Carbon nanotubes (CNTs) are used to improve the electrical conductivity of sulfur, where CNT also acts as both collector and conductor. In addition, metal oxides (MO_x, M=Ni, Mg), which are easy to adsorb lithium polysulfide, are added to the CNT/S electrode to suppress the shuttle reaction in lithium-sulfur batteries, which is a result of suppressing the loss of active sulfur material due to the excellent adsorption of lithium polysulfide by metal oxides. The MO_x@CNT/S electrode exhibited higher capacity characteristics and cycle stability than the CNT/S electrode without metal oxides. Among the MO_x@CNT/S electrodes, the NiO@CNT/S electrode displayed a high discharge capacity of 780 mAh g^-1 at 1 C and an extreme capacity decrease to 134 mAh g^-1 after 200 cycles. Although the MgO@CNT/S electrode exhibited a low discharge rate of 544 mAh g^-1 in the initial cycle, it showed good cycle stability with 90% of capacity retention up to 200 cycles. Further, to achieve high capacity and cycle stability, the Ni_0.7Mg_0.3O@CNT/S electrode, mixed with Ni:Mg in the ratio of 0.7:0.3, manifested an initial discharge rate of 755 mAh g^-1 (1 C) and a capacity retention rate of more than 90% after 200 cycles. Therefore, applying binary metal oxides to CNT/S provides a freestanding electrode for developing economical and high-performance Li-S batteries, effectively improving lithium polysulfide's high capacity characteristics and dissolution.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.39-46
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• 2015

A outdoor termination installed at the outdoor substation is required to connect undergroud cables and overhead transmission lines. The joint box for AC transmission system is already developed and widely used to interconnect overhead and undergroud systems. But the development of the joint box for DC transmission system was only introduced from China and Japan, but theire developemnt staus and core technologies were not fully reported. In order to implement HVDC systems connecting ovehead transmission lines and undergroud cables, a outdoor termination should be developed, but the detailed specifications and information of this device were not reported. It is estimated that the development of the joint box for DC environment has some technical obstacles including insulating materials, electric field mitigation, thermal temperature rise, and space charge accumuations. Among this, the most important one is the DC elctrical insualtion design. Therefore, in order to investigate the DC elctrical insualton design of outdoor termination, the design of AC slip-on type outdoor termination is reffered, and DC electric field analysis performed to verify the possiblity of application of AC joint box into DC joint box. Especially for DC electric field analysis, temperature rise of insualting materials of a joint box was considered, because the conductivity of materials could be changed due to temperature rise. Furthermore, DC electric field analysis considering transinet state, and polarity reversal state were also investigated to verify which state is the most severe condition for the DC joint box. From the simualtion resulsts, it was shown that the value and the position of maximum electric field was obtained comparing AC state, DC state without temperaure rise, and DC state with temperaure rise. And it was confimred that severe DC electric field was observed considing temperaure rise. Finally, in order to reduce DC eletric field intensifation, different configuration of the joint box was applied and it was not possible to obtain satisfactory results. It means that the slight change of configuration of AC joint box was not the suitable soluton for DC joint box. It is essential to establish novel DC insulaton design skills and method for DC joint box to commercialze this product in the near future.