• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.404-410
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• 2006

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 40[K] should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. In order to take advantage of a greater critical current density of high temperature superconducting (HTS) and considerably reduce the size and weight of the system, conduction-cooled HTS superconducting magnetic energy storage (SMES) at temperatures well below 40[K] should be investigated. This work focuses on the breakdown and flashover phenomenology of dielectrics exposed in air and/or vacuum for temperatures ranging from room temperature to cryogenic temperature. Firstly, we summarize the insulation factors of the magnet for the conduction cooled HTS SMES. And Secondly a surface flashover as well as volume breakdown in air and/or vacuum with two kind insulators has been investigated. Finally, we will discuss applications for the HTS SMES including aging studies on model coils exposed in vacuum at cryogenic temperature. The commercial application of many conduction-cooled HTS magnets, however, requires refrigeration at temperatures below 40[K], in order to take advantage of a greater critical current density of HTS and reduce considerably the size and weight of the system. The magnet is driven in vacuum condition. The need to reduce the size and weight of the system has led to the consideration of the vacuum as insulating media. We are studying on the insulation factors of the magnet for HTS SMES. And we experiment the spacer configure effect in the dielectric flashover characteristics. From the results, we confirm that our research established basic information in the insulation design of the magnet.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.113-120
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• 2002

This paper describes characteristics of transient voltage waveforms caused by human electrostatic discharges(ESDs). For purpose of achieving the statistics on the meaningful amplitude and initial slope for transient ESD voltage waveforms, transient voltages due to human ESDs in various conditions were observed. A voltage measuring system with a wide bandwidth from DC to 400[MHz] was employed. ESD voltage waveforms are approximately the same as ESD current waveforms. Also the simulated results, which are calculated by the reposed equivalent circuit, are closely similar to the measured voltage waveforms. ESD voltage waveforms are strongly dependent on the approach speed and material of intruder, a fast approach causes ESD voltage waveform with a steep rise time than for a slow approach. The voltage waveforms from dialect finger ESDs have a relatively long rise time of 10∼30[ns], but their peaks are low. On the other side ESD voltage waveforms causer by screwdriver with insulating handle have a steep slope with a very short, less than 1[ns] rise time, but their initial spikes are extremely high The obtained results in this work would be applied to solve ESD problems for low voltage and small current electronic devices.

• Journal of IKEEE
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• v.22 no.2
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• pp.488-490
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• 2018

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characterisitcs, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. To demonstrate the changing characteristics of hysteresis, one of the important features of the feedback field effect transistor, we simulated changing the gate insulating material and the gate metal electrode. The fluctuation in the characteristics changed the $V_{TH}$ of the hysteresis and showed a decrease in width of the hysteresis.

• Journal of Bio-Environment Control
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• v.25 no.4
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• pp.270-276
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• 2016

This study analysed overall heat transfer coefficient, heat transmission, and rate of indoor air heating provided by water curtain in order to determine the heat transfer characteristic of double-layered greenhouse equipped with a water curtain system. The air temperatures between the inner and outer layers were determined by the water flow rate and inlet water temperature. Higher water flow rate and inlet water temperature resulted in the increased overall heat transfer coefficient between indoor greenhouse air and water curtain. However, it was found that with higher levels of water flow rate and inlet water temperature, indoor overall heat transfer coefficient was converged about $10W{\cdot}m^{-2}{\cdot}^oC^{-1}$. The low correlation of overall heat transfer coefficient between water curtain and air within double layers was likely because the combination of greenhouse shape, wind speed and outdoor air temperature as well as water curtain affected the heat transfer characteristics. As water flow rate and inlet water temperature increased, the heat transferred into the greenhouse by water curtain also tend to rise. However it was demonstrated that the rate of heat transmission from water curtain into greenhouse with water curtain system using underground water was accounted for 22% to 28% for total heat lost by water curtain. The results of this study which quantify heat transfer coefficient and net heat transfer from water curtain may be a good reference for economical design of water curtain system.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Journal of the Korean Society of Safety
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• v.30 no.6
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• pp.40-47
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• 2015

In this study, temperature characteristics and fire damage form were analyzed to investigate flame spreading form and fire probability from ignition sources subject to drivit component materials which is finishing material in architecture. Ignition sources were limited to a gas torch and exterior panel board fire, and the size of the sample was manufacture in 30 cm length ${\times}$ 50 cm height ${\times}$ 5cm thickness size. Marble (inner wall) + 3 mm drivit (outer wall), marble (inner wall) + 4 mm plaster stone (outer wall), sandwich panel + 3 mm driver bit (outer wall), sandwich panel + 3 mm driver bit + insulation (outer wall), and gypsum board (inner wall) + 3 mm drivit (outer wall) were prepared for the sample. As result of the research for temperature characteristics, large temperature difference by each material was shown in $218^{\circ}C{\sim}995^{\circ}C$ at 30 seconds and $501^{\circ}C{\sim}1078^{\circ}C$ at 300 seconds. Especially when the inner wall was a plaster board, lowest temperature of $501^{\circ}C$ was shown at 300 seconds and marble inner wall showed the following lowest temperature of $900^{\circ}C$. Temperature rising over $1000^{\circ}C$ was shown in other materials. Regarding fire damage form, drivit or gypsum board outer wall parts exposed to fire showed combustion and carbonization to show calcination(breaking phenomenon) and influence of heat exposure was higher as calcination became more severe.

• Journal of Biosystems Engineering
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• v.31 no.3 s.116
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• pp.168-174
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• 2006

The purpose of this study is to develop the cold chain system by developing optimal phase change materials (PCM). There are some benefits from developing this system such as keeping freshness of agriculture products, saving energy, etc. The major results are as follows. To decide a latent heat material, the characteristics of water, sodium, polyacrylate, ethanol and N-tetradecane are analysed. Also, an insulating material is made by mixing water, nucleating agent and latent heat material, using cementing method. In addition, the sensitivity analysis for developed latent heat material($K_l,\;K_2,\;K_3$) is conducted. For $K_l,\;K_2,\;K_3$ which cans keep latent heat temperature, ranging from $0\;to\;5^{\circ}C,\;5\;to\;10^{\circ}C,\;10\;to\;15^{\circ}C$. it can keeps latent heat temperature at radiant heat (5, 12, $17^{\circ}C$) and transportation latent heat container both melting temperature and amount of latent heat of Kl are $-1.6{\pm}1.0^{\circ}C$, 326.51 J/g, respectively and freezing temperature and latent heat are $-7.98{\pm}1.5^{\circ}C$ and 174.18 J/g. and $K_2$ are $7.41{\pm}1.5^{\circ}C$, 89.80 J/g, respectively and freezing temperature and latent heat are $-2.14{\pm}1.5^{\circ}C$ and 83.90 J/g. and $K_3$ are $9.54{\pm}1.0^{\circ}C$, 145.42 J/g, respectively and freezing temperature and latent heat are $0.21{\pm}1.0^{\circ}C$ and 152.48 J/g.