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http://dx.doi.org/10.5207/JIEIE.2002.16.2.113

Characteristics of the Voltage Waveforms Caused by Human Electrostatic Discharges  

이복희 (인하대학교 전기전자공학부)
강성만 (동 대학원 전기공학과)
엄주홍 (동 대학원 전기공학과)
이태룡 (동 대학원 전기공학과)
Publication Information
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers / v.16, no.2, 2002 , pp. 113-120 More about this Journal
Abstract
This paper describes characteristics of transient voltage waveforms caused by human electrostatic discharges(ESDs). For purpose of achieving the statistics on the meaningful amplitude and initial slope for transient ESD voltage waveforms, transient voltages due to human ESDs in various conditions were observed. A voltage measuring system with a wide bandwidth from DC to 400[MHz] was employed. ESD voltage waveforms are approximately the same as ESD current waveforms. Also the simulated results, which are calculated by the reposed equivalent circuit, are closely similar to the measured voltage waveforms. ESD voltage waveforms are strongly dependent on the approach speed and material of intruder, a fast approach causes ESD voltage waveform with a steep rise time than for a slow approach. The voltage waveforms from dialect finger ESDs have a relatively long rise time of 10∼30[ns], but their peaks are low. On the other side ESD voltage waveforms causer by screwdriver with insulating handle have a steep slope with a very short, less than 1[ns] rise time, but their initial spikes are extremely high The obtained results in this work would be applied to solve ESD problems for low voltage and small current electronic devices.
Keywords
ESD; Transient voltage; simulation; Voltage sensor;
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  • Reference
1 E. K. Miller, Time-Domain Measurement in Electromagnetics, Van Norstand Reinhold Co., pp.175-290, 1986.
2 James E. Vinson and Juin J. Liou, “Electrostatic Discharge in Semiconductor Devices”, Proc. of IEEE, Vol. 86, pp.399-420, 1998.   DOI   ScienceOn
3 R. B. Standler, "Protection of Electronic Circuits from Overvoltage", Wiley-Interscience Pub., pp.26-27, 1989.
4 Sclater, Neil., “Electrostatic Discharge Protection for Electronics", TAB Books, pp.43-67, 1990.
5 Jonassen, N., “Human body capacitance: static or dynamic concept”, Electrical Overstress/Electrostatic Discharge Symp. Proc., pp.111-117, 1998.
6 Vinson, J.E., Liou, J.J. “Electrostatic discharge in semiconductor devices: protection techniques”, IEE Proc., Vol.88, pp.1878-1902, 2000.   DOI   ScienceOn
7 J. Lalot, “Generation and Measurement of Fast Transient Overvoltage with Special Reference to Disconnector Operation in GIS”, CIGRE Int. Conf. on Larger High Voltage Electric Systems, No.36-88, WG-03, 1986.
8 C. Diaz, S. M. Kang, C. Duvvury, "Tutorial Electrical Overstress and Electrostatic Discharge", IEEE Trans., Vol.44, pp.2-5, 1995.
9 R. G. Chemelli and B. A. Unger, "ESD by Static Induction", EOS/ESD Symp. Proc., Vol. EOS-5, pp.29-36, 1983.
10 Verhaege K, Russ C, Robinson-Hahn D, Farris M, Schnlon J and Lin D, “Recommendations to further improvements of HBM ESD component level test specifications ", EOS/ESD Symp. Proc., pp.40-53, 1996.
11 S. U. Kim, "ESD Induced Gate Oxide Damage During Wafer Fabrication Process ", EOS/ESD Symp. Proc., Vol. EOS-14, pp.99-105, 1992.