• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.1915-1920
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• 2013

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.3
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• pp.240-249
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• 1985

This paper presents the results of the galvanic anode's characteristicsin the Al-Zn-In-Mg and Al-Zn-In-Mg system anodes used aluminium ingot of low purity, 99.5% grade. The results of thses performance tests are as follows: 1) Zn, In and Mg are an available elements to improve the performance of Aluminium alloy anodes. 2) When the range of zinc content in the Al-Zn-In-Mg system anode is 2-5% the more zinc content, the more improve the anode performance. 3) Al-Zn-In-Mg system anode requires a long term over 50 days for the performance test. 4) The composition of Al-Zn-In-Mg system anode which shows the most excellent performance is Al-(2-3%) Zn-(0.02%) In-(1.0%) Mg. 5) When the Al-Zn-In-Mg system anode is annealed for an hour in 500 to 550 .deg. C, the anode performance is improved. 6) The lower average potential and the better corrosion pattern in the Al-Zn-Mg, Al-Zn-In and Al-Zn-In-Mg system anodes, the more current efficiency is improved.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.75-79
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• 2006

The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.295-298
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• 2015

Ozone micro-bubble cleaning system was designed, and made to develop a unique technique to clean wafers by using ozone micro-bubbles. The ozone micro-bubble cleaning system consisted of loading, cleaning, rinsing, drying and un-loading zones, respectively. In case of the cleaning the silicon wafers of a solar cell, more than 99 % of cleaning efficiency was obtained by dipping the wafers at 10 ppm of ozone for 10 minutes. Both of long cleaning time and high ozone concentration in the wet-solution with ozone micro-bubbles reduced cleaning efficiency because of the re-sorption of debris. The cleaning technique by ozone micro-bubbles can be also applied to various wafers for an ingot and LED as an eco-friendly method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.47-53
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• 2014

Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.329-332
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• 2008

Nowadays, It is required human body-friendly, good mechanical properties, and economical efficiency material, simultaneously. The material to meet above requirement condition rear up high nitrogen stainless steel(HNS). However, HNS have a lot of problem such as poor workability, hot crack sensitivity. So, It is needed the condition of plastic working to overcome above many problem. In this study, VIM ingot with 100kg was made by pressurized vacuum induction melting. And then, The slab perform for hot rolling was prepared by open-die forging. Hot rolling process was performed by computer simulation according to change of height reduction, rolling temperature, heating numbers, rolling pass and so forth. The results of analysis were investigated between analysis and lab-scale rolling product.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.94-98
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• 2012

The behavior of ozone micro bubble cleaning system was investigated to evaluate the solution as a new method of solar cell wafer cleaning in comparison with former conventional RCA cleaning. We have developed the ozone dissolution system in the ozonated water for more efficient cleaning conditions. The optimized cleaning conditions for solar cell wafer process were 10 ppm of ozone concentration and 12 minutes in cleaning periods, respectively. We have confirmed the cleaning reliability and cell efficiencies after ozone micro bubble cleaning. Using this new cleaning technology, it was possible to obtain higher efficiency, higher productivity, and fast tact time for applying cleaning in the fields on bare ingot wafer, LED wafers as well as the solar cell wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.