Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot |
Jeon, Hye Jun
(Department of Chemical engineering, Yeungnam University)
Park, Ju Hong (Technical Team, Paultec) Artemyev, Vladimir (STR soft-Group, STR) Jung, Jae Hak (Department of Chemical engineering, Yeungnam University) |
1 | Fraunhofer ise: Photovoltaics report, available online: www.ise.fraunhofer.de/content/dam/ise/de/documents/publications/studies/photovoltaics-report.pdf, 2018. |
2 | Dornberger, E., Ammon, W. V., "Silicon materials science and technology," J. Electrochem. Soc., Vol. 143, p. 1636, 1996. DOI |
3 | Kulkarni, M. S., Holzer, J. C. , Ferry, L. W., “The agglomeration dynamics of self-interstitials in growing czochralski silicon crystals,” J. Cryst. Growth, Vol. 284, No. 3, pp. 35-368, 2005. |
4 | Vorob'ev, A., Sid'ko, A., Kalaev, V., "Advanced chemical model for analysis of cz and ds si-crystal growth," J. Cryst. Growth, Vol. 386, pp. 226-234, 2014. DOI |
5 | Kalaev, V. V., Evstratov, Y., Smirnov, E. M., Zhmakin, A. I., Makarov, Y. N., "Numerical modeling of czochralski silicon crystal growth", ECCOMAS, Vol. 1, 2000. |
6 | Pohl, J., Muller, M., Seidl, A., Albe, K., “Formation of parallel (1 1 1) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations,” J. Cryst. Growth, Vol. 312, No. 8, pp. 411-1415, 2010. |
7 | Rozgonyi, G. A., Deysher, R. P., Pearce, C. W., "Silicon Materials Science and Technology," J. Electrochem. Soc., Vol. 123, p. 1910, 1976. DOI |
8 | Shockley, W. Read, W.T. Jr., "Statistics of the Recombination of Holes and Electrons," Phys. Rev., Vol. 87, pp. 835-843, 1952. DOI |
9 | Lee, Y. R., Jung, J. H., “Research for High Quality Ingot Production in Large Diameter Continuous Czochralski Method,” Photovoltaic Research, Vol. 4, No. 3, pp. 124-129, 2016. DOI |
10 | Kalaev, V. V., Lukanin, D. P., Zabelin, V. A., Makarov, Y. N., Virbulis, J., Dornberger, E., von Ammon, W., “Calculation of Bulk Defects in CZ Si Growth : Impact of Melt Turbulent Fluctuations,” J. Cryst. Growth, Vol. 250, No. 12, pp. 203-208, 2003. DOI |
11 | "Von Mises Criterion (Maximum Distortion Energy Criterion)," Engineer's edge. Retrieved 8 February, 2018. |
12 | Voronkova, V. V. Falsterb, R., "Intrinsic Point Defects and Impurities in Silicon Crystal Growth," J. Electrochem. Soc., Vol. 149, No.3, pp. 1-2, 2002. |
13 | Voronkov, V. V. Flaster, R., "Intrinsic Point Defects and Impurities in Silicon Crystal Growth," J. Electrochem. Soc., Vol. 149, No. 3, p. 167, 2002. |
14 | Ammon, W., Dornberger, E., Oelkrug, H., Weidner, H., "The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growth," J. Crystal Growth, Vol. 151, p. 273, 1995. DOI |
15 | Kim, H., "A Study on Dynamic Heat Flux for 450mm Single Crystal Silicon Growth under Ma`gnetic Fields," Hanyang University Master's Thesis. |