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http://dx.doi.org/10.21218/CPR.2020.8.1.017

Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot  

Jeon, Hye Jun (Department of Chemical engineering, Yeungnam University)
Park, Ju Hong (Technical Team, Paultec)
Artemyev, Vladimir (STR soft-Group, STR)
Jung, Jae Hak (Department of Chemical engineering, Yeungnam University)
Publication Information
Current Photovoltaic Research / v.8, no.1, 2020 , pp. 17-26 More about this Journal
Abstract
It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.
Keywords
Melt-crystal interface shape; Crystal growth rate; Defect point; Crystal growth simulation; Silicon ingot; Czochralski process;
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