• 보존과학회지
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• 제38권1호
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• pp.33-44
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• 2022

The study, iron-making process was examined through the scientific analysis of six by-products that were obtained during iron making at the Songdu-ri site in Jincheon. The total Fe content of the slags excavated from the Songdu-ri site was 36.29-54.61 wt%, whereas the deoxidation agent was 26.48-49.08 wt%. The compound analysis result indicated that fayalite and wüstite are the main compounds in slag. Furthermore, the microstructure analysis result confirmed the presence of fayalite and wüstite in the slag. It can be inferred from the flat shape in a bright matrix structure of the hammer scales that forging was performed in the latter stage. The Raman micro-spectroscopy results confirmed that the surface was hematite (Fe₂O₄), middle layer was magnetite (Fe₃O₄), and inner layer was wüstite (FeO). The presence of smelting and smithing slags, spheroid hammer scales, and flake hammer scales suggests that at the Songdu-ri site, iron-making process is carried out by division of labor into producing iron bloom through direct smelting, refining and forge welding, and ingot production.

• Journal of Radiation Protection and Research
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• 제49권2호
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• pp.85-90
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• 2024

Background: This study focuses on the fabrication and characterization of quasi-hemispherical Cd_0.9Zn_0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research. Materials and Methods: A CZT ingot was grown using the vertical Bridgman technique, followed by proper fabrication processes including wafering, polishing, chemical etching, electrode deposition, and passivation. Response properties were evaluated under various external bias voltages using gamma-ray sources such as Co-57, Ba-133, and Cs-137. Results and Discussion: The fabricated quasi-hemispherical CZT detector demonstrated sufficient response properties across a wide range of gamma-ray energies, with sufficient energy resolution and peak distinguishability. Higher external bias voltages led to improved performance in terms of energy resolution and peak shape. However, further improvements in defect properties are necessary to enhance detector performance under low bias conditions. Conclusion: This study underscores the efficacy of quasi-hemispherical CZT detector for gamma-ray spectroscopy, providing valuable insights for enhancing their capabilities in radiation research field.

• 한국결정성장학회지
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• 제28권4호
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• pp.141-147
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• 2018

태양광 에너지는 깨끗하며 무한한 재생에너지의 한가지로 많은 관심을 받아왔다. 태양광 에너지는 다결정 실리콘 웨이퍼 혹은 단결정 실리콘 웨이퍼로 구성된 솔라셀에 의해서 전기에너지로 전환된다. 제조원가를 낮추기 위하여 한 개의 석영 도가니에 폴리실리콘의 충진 크기를 증가시키는 연구가 많이 개발되어 왔다. 충진 크기를 증가시키면, 쵸크랄스키 공정장비의 온도제어가 강한 멜트 대류 때문에 힘들어진다. 본 연구에서는 20 inch와 24 inch 석영도가니와 90 Kg, 120 Kg, 150 Kg, 200 Kg, 250 Kg의 다양한 폴리실리콘 충진 크기에서 시뮬레이션을 통해 장비 온도 프로파일을 얻었으며, 실제값과 비교하고 분석하였다. 시뮬레이션 온도 프로파일과 실제 온도프로파일이 잘 일치하였으며, 이로써 충진 사이즈가 증가할 경우, 실제온도 프로파일 최적화를 위해 시뮬레이션을 사용할 수 있게 되었다.

• 대한기계학회논문집
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• 제16권10호
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• pp.1877-1889
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• 1992

본 연구에서는 업셋팅의 변형해석 및 온도해석(열전달 해석)을 비연계 방식으 로 동시에 해석하고 실제 공정에 가깝게 접근하는 축대칭 열점소성 유한요소 프로그램 을 이용하여, 시뮬레이션에 의해 공정을 해석하여 불량감소 및 원가절감을 위해 단조 공정을 개선하는 것이다. 업셋팅공정의 연구에 있어서는 대형강괴의 주 불량요인인 기공의 소멸을 위한 공정방안을 연구하는데 있다.

• Tribology and Lubricants
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• 제32권2호
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• 한국세라믹학회지
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• 제48권4호
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• 대한치과보철학회지
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• 제35권1호
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• pp.130-143
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• 1997

A heat-pressed technique(IPS-Empress, Ivoclar) has been described to construct single unit crown, inlay/onlay and veneers using a partially pre-cerammed and pre-colored glass-leucite ingot that has the greateast strength by the combination of heat-pressed procedure through the smalldiameter sprue and heat treatment procedure. The purpose of this study was to evaluate the flexure strength of a heat-pressed ceramic material(IPS-Empress) without simulated firing treatments according to pontic designs. Two groups of 9 disks(1.4mm thick, 14mm in diameter) each using two types of sprues with different diameters($({\Phi}2.8\;,{\Phi}1.8)$) and numbers were prepared. The specimens were mounted in the testing jig. The flexural strengths were determined, by means of the bi-axial bending test, by loading the center of disk to failure using a universal testing machine(Zwick 145141, Zwick, Germany) at a cross-head speed of 1.0 mm/min. The means flexural strength value of one group using a sprue with ${\Phi}2.8$ was $140.4{\pm}8.0Mpa$. That of the other group using two sprues with ${\Phi}1.8$ was $151.8{\pm}10.3Mpa$. After analysis, results showed that there was a statistical difference between groups(t=2.33m p<0.05). No clnical implications were drawn from these data because of absence of simulated firing treatment.

• 자원리싸이클링
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• 제21권5호
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• pp.58-64
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• 2012

본 연구는 타이타늄 선삭 스크랩을 진공 아크 용해에 의해 건전한 버튼형 잉곳으로 제조하여 아크 발생용 소모성 전극으로의 재활용을 위해 타이타늄 내 불순물의 거동 및 특성을 평가하였다. 먼저 가스불순물인 산소는 진공 아크 용해에 의해 초기 표면의 산화층에 의해 제거되지만 이후 타이타늄에 고용된 산소는 제거되지 않는 것으로 확인되었다. 타이타늄 스크랩의 대표 금속불순물인 철의 경우 타이타늄과의 증기압 차이로 인해 진공 아크 용해에 의해 최종 20분간 용해시 약 43%의 제거율을 보이며, 최종 제조된 타이타늄 버튼형 잉곳은 ASTM 규격의 순 타이타늄 등급 3에 해당하는 순도를 보여 VAR(Vacuum Arc Remelting)용 소모성 전극의 제조에 가능한 것으로 확인하였다.

• 자원리싸이클링
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• 제21권4호
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• pp.60-68
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• 2012

반도체 및 태양광 산업에서는 반도체 소자 및 솔라셀을 제조하기 위하여 실리콘 웨이퍼가 사용되고 있다. 실리콘 웨이퍼는 실리콘 잉곳의 절단으로부터 만들어지며 이 공정에서 실리콘 슬러지가 발생한다. 반도체 소자의 사용처가 점점 증가함에 따라 실리콘 슬러지의 발생량 또한 증가하고 있는 실정이다. 최근 경제적인 측면과 효율성에 관한 측면에서 실리콘 슬러지의 재활용 기술이 폭넓게 연구되고 있다. 본 연구에서는 실리콘 슬러지의 재활용 기술에 대한 특허와 논문을 분석하였다. 분석범위는 1982년~2011년까지의 미국, EU, 일본, 한국의 등록/공개된 특허와 SCI 논문으로 제한하였다. 특허와 논문은 키워드를 사용하여 수집하였고, 기술의 정의에 의해 필터링하였다. 특허와 논문의 동향은 연도, 국가, 기업, 기술에 따라 분석하여 나타내었다.