• 한국주조공학회지
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• 제13권6호
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• pp.540-546
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• 1993

The effects of fluid flow on the purification of aluminum were studied. As the revolution rate(N) increased, the size of columnar grain decreased gradually. The concentration of solidified crystal was decreased with increasing distance from chill and revolution rate(N). Distribution boundary layer thickness(${\delta}$) was calculated from the solute distribution obtained in solid experimentally and by use of BPS equation. The value of ${\delta}$ changed from about $60{\mu}m$ at N value of 27rpm to about $15{\mu}m$ at N value of 1000rpm. From this result, high purification was obtained by decreasing the diffusion boundary layer under forced convection.

• 한국주조공학회지
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• 제15권5호
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• pp.507-513
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• 1995

The effect of forced convention on the solute redistribution of the Al ingot was studied quantitatively in an effort to fabricate high purity aluminum using a segregation method. Based on the experimental results, the solute concentration in the solid phase tended to decrease at the early state of solidification, and then increased gradually as solidification proceeded. Fe and Si concentrations decreased as growth rate decreased and as revolution speed increased. The solute redistribution obtained from the BPS model incorporated with the tangential flow component as well as the axial flow component within the melt, agreed well with the measurements.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 D
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• pp.2089-2092
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• 2002

The PID controller have the simple structure and show the comparatively good control performance. Crystal Grower(FF-CZ150) melt polycrystalline silicon at the temperature of about 1450$^{\circ}C$, then grow it into a single crystalline ingot. The automatic diameter control system of the Crystal Grower has a good performance with only PD control. But it contain the integrator in the plant which has a long time delay. In this paper, we show the secondary approximate model and applies time delay controller which has good performance for the plant with long time delay. It will be able to improve the response characteristic against a standard input and a load disturbance.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 춘계학술발표회논문집(2)
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• pp.609-615
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• 1995

Chip machining에 의한 U$_3$Si 분말제조시 절삭가공조건이 분말 입도 분포에 미치는 영향을 조사하기 위하여 U$_3$Si ingot를 선반에서 초경공구를 사용하여 절삭속도 및 이송속도를 변화시키면서 chip을 가공하였고, 가공된 chip의 형상을 광학현미경으로 관찰하고 칩의 크기를 측정하였다. 모든 절삭조건에서 톱니모양의 칩(saw toothed chip)이 형성되었으며, 일정한 절삭속도에서 공구의 이송속도를 변화시켰을 때 이송속도가 증가함에 따라 칩 두께의 증가와 함께 chip segment의 폭도 증가하여 chip segment 의 크기가 뚜렷이 증가함을 보였다. 또한 chip segment의 크기는 절삭속도 보다는 공구의 이송속도에 크게 영향을 받는 것을 알 수 있었고 분말의 입도 분포에도 크게 영향을 미치는 것으로 나타났다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 춘계학술발표회논문집(2)
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• pp.603-608
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• 1995

핵연료 성능과 uranium loading 향상을 위하여 제조한 $U_3$Si ribbon은 초정 $U_3$S $i_2$와 uranium solid solution으로 이루어져 있으며, 잘 발달된 dendrite 조직을 이루고 있다. 또한 grain size는 종전 ingot 제조방법에 비하여 약 1/20 정도로 미세하다. $700^{\circ}C$와 80$0^{\circ}C$에서 열처리한 $U_3$Si grain 내 twinning 현상은 이 온도구간에서 ordering 변태가 일어나는 것을 나타내며, TEM electron diffraction pattern 분석결과 twin은 {011}$_{fct}$ twin Plane을 따라 일어나는 것을 확인하였다.다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1342-1344
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• 1994

Silver-Nickel alloy has been used as a electrical contact material for low voltage, low current. Since the solubility between Ag and Ni is very low, it is difficult to produce Ag-Ni alloy by using conventional melting method and disperse Ni powder homogeneously in Ag matrix. In this study we have been produced fine Ag-Ni alloy powder by using coprecipitation method. Firstly, we have produced silver-nickel nitrate solution by dissolving the Ag and Ni ingot in nitric acid solution and then, coprecipitate (Ag, Ni)carbonate dropping Ag-Ni nitrate solution to sodium carbonate solution. (Ag, Ni) carbonate is heat-treated in $H_2$ atmosphere, $400^{\circ}C$ and it has been analysed by TGA, SEM, XRD, ICP. It is represented Silver-Nickel alloy powder in the particle range of $0.1{\sim}0.5{\mu}m$.

• 한국결정성장학회지
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• 제3권2호
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• pp.149-156
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• 1993

Si과 흑연 주형사이에 release layer로서 $CaCl_2$를 사용하여 vold와 crack이 없는 건전한 다결정 Si ingot를 제조하였다. 원소재로서 merallurgical-grade Si를 사용하였으며, 결정성장속도와 응고분율에 따른 불순물농도변화, X-선 회절분석, 비저항측정등을 행하였다. X-선 회절분석 결과 R=0.5mm/min으로 성장된 다결정 Si의 우선성장방향은 (220)면이고, R=0.2mm/min의 경우 우선성장방향은 (111)면임을 확인하였다. 또한 결정성장속도 및 응고분율의 증가에 따라 비저항값은 감소하는 경향을 나타내었다.

• 한국결정성장학회지
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• 제25권1호
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• pp.13-19
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• 2015

Among the various possible factors affecting the Minority Carrier Life Time (MCLT) of the mc-Si crystal, dislocations formed during the cooling period after solidification were found to be a major element. It was confirmed that other defects such as grain boundary or twin boundary were not determinative defects affecting the MCLT because most of these defects seemed to be formed during the solidification period. With a measurement of total thickness variation (TTV) and bow of the silicon wafers, it was found that residual stress remaining in the mc-Si crystal might be another major factor affecting the MCLT. Thus, it is expected that better quality of mc-Si can be grown when the cooling process right after solidification is carried out as slow as possible.

• 한국결정성장학회지
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• 제10권1호
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• pp.42-47
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• 2000

일반적인 쵸크랄스키(CZ)방법으로 성장된 실리콘 단결정봉(Ingot)을 가공하여 경면 연마한 후 RTA법으로 수소 분위기에서 열처리하여 실리콘 웨이퍼 표면 및 표면 근처의 특성 변화에 대하여 고찰하였다 수소 열처리를 통하여 표면의 COP (결정결함)가 현저히 감소하는 것을 확인하였고 깊이 5um까지의 영역에서도 결정결함의 밀도가 감소하였다. 또한 수소 열처리에 의해 실리콘 웨이퍼 표면이 에칭 및 실리콘의 재배열에 의해 형성되는 테라스(Terrace) 형태도 관찰되었다.

• 대한전기학회논문지
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• 제41권1호
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.