• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.9
• /
• pp.631-637
• /
• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.1
• /
• pp.24-36
• /
• 2003

The digital mobile communication will be developed till getting multimedia service in anyone, any where, any time. Theses requiring items are going to be come true via IMT-2000 system. Transmitting signal bandwidth of IMT-2000 system is 3 times as large as IS-95 system. That is mean peak to average of signal is higher than IS-95A system. So we have to design it carefully not to effect in adjacent channel. HPA(High Power Amplifier) located in the end point of system is operated in 1-㏈ compression point(Pl㏈), then it generates 3rd and 5th inter modulation signals. Theses signals affect at adjacent channel and RF signal is distorted by compressed signal which is operated near by Pl㏈ point. Then the most important design factor is how we make HPA having high linearity. Feedback, Pre-distorter and Feed-forward methods are presented to solve theses problems. Feed-forward of these methods is having excellent improving capacity, but composed with complex structure. Generally, Linearity and Efficiency in power amplifier operate in the contrary, then it is difficult for us to find optimal operating point. In this paper we applied algorithm which searches optimal point of linear characteristics, which is key in Power Amplifier, using minimum current point of error amplifier in 1st loop. And we made 2nd loop compose with new structure. We confirmed fabricated LPA is operated by having high linearity and minimum current condition with ACPR of -26 ㏈m max. @ 30㎑ BW in 3.515㎒ and ACLR of 48 ㏈c max@${\pm}$㎒ from 1W to 40W.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.4
• /
• pp.7-14
• /
• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.10
• /
• pp.671-677
• /
• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.5
• /
• pp.25-31
• /
• 2009

A low power SRAM using supply voltage charge recycling (SVCR-SRAM) scheme is proposed. It divides into two SRAM cell blocks and supplies two different powers. A supplied power is $V_{DD}$ and $V_{DD}/2$. The other is $V_{DD}/2$ and GND. When N-bit cells are accessed, the charge used in N/2-bit cells with VDD and $V_{DD}/2$ is recycled in the other N/2-bit cells with $V_{DD}/2$ and GND. The SVCR scheme is used in the power consuming parts which bit line, data bus, word line, and SRAM cells to reduce dynamic power. The other parts of SRAM use $V_{DD}$ and GND to achieve high speed. Also, the SVCR-SRAM results in reducing leakage power of SRAM cells due to the body-effect. A 64K-bit SRAM ($8K{\times}8$bits) is implemented in a $0.18{\mu}m$ CMOS process. It saves 57.4% write power and 27.6% read power at $V_{DD}=1.8V$ and f=50MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.3
• /
• pp.7-17
• /
• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.183-183
• /
• 2014

Recently, multiferroic materials gain much attention due to their fascinating fundamental physical properties. These materials offer wide range of potential applications such as data storage, spintronic devices and sensors, where both electronic and magnetic polarizations can be coupled. Among single-phase multiferroic materials, $BiFeO_3$ is typical because of the room-temperature magnetoelectric coupling in view of long-range magnetic- and ferroelectric-ordering temperatures. However, $BiFeO_3$ is well known to have large leakage current and small spontaneous polarization due to the existence of oxygen vacancies and other defects. Furthermore the magnetic moment of pure $BiFeO_3$ is very weak owing to its antiferromagnetic nature. Recently, various attempts have been performed to improve the multiferroic properties of $BiFeO_3$ through the co-doping at the A and the B sites, by making use of the fact that the intrinsic polarization and magnetization are associated with the lone pair of $Bi^{3+}$ ions at the A sites and the partially-filled 3d orbitals of $Fe^{3+}$ ions at the B sites, respectively. In this study, $BiFeO_3$, $Bi_{0.9}Ho_{0.1}FeO_3$, $BiFe_{0.97}Ni_{0.03}O_3$ and $Bi_{0.9}Ho_{0.1}Fe_{0.97}Ni_{0.03}O_3$ bulk compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Ho_2O_3$, $Fe_2O_3$ and $NiO_2$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h to produce the samples. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent and temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer and superconducting quantum-interference device.

• The Journal of the Korea Contents Association
• /
• v.8 no.11
• /
• pp.182-188
• /
• 2008

The MLC(multi leaf collimator) in charge of important role in radiation therapy field recently have been exchanging from shielding block into it rapidly, owing to being convenient. However, MLC can be occurred the leakage dose of inter_leaves and the error of algorithm in imput and output from digital signal. We compared the difference of imput method to MLC made by Varian Cop. with the error and effective field induced by MLC shaper and film scanner based on XimaVision value as using MLC layer of various shapes. According to comparing standard value with them to basic MLC layer (test1-5), MLC shaper was $0{\sim}0.29cm$, $0.23{\sim}3.59cm^2$ and film scanner was $0{\sim}0.78cm$, $0.24{\sim}3.89cm^2$. At the MLC layer to be applied in clinic, MLC shaper was $0{\sim}0.54cm$, $0.04{\sim}1.68cm^2$ and film scanner was $0{\sim}0.78cm$, $0.24{\sim}3.89cm^2$. The more distance and field from axis of central line increase, the more bigger the error value increases. There is a few mm error from standard point at the process which imput various information to apply MLC in clinic. and effective field did not have variation of monitor unit and dose owing to being a few cm2 error against real field. But there are some problem to shield critical organs because some part of target volume induced by the movement of organs can be not included, therefore we have to pay attention on the process to imput MLC layer

• Korean Journal of Materials Research
• /
• v.4 no.2
• /
• pp.143-151
• /
• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• Journal of Korea Water Resources Association
• /
• v.53 no.spc1
• /
• pp.813-826
• /
• 2020

This study analyzes the effects of the Smart Water City (SWC) project that was introduced from 2014 to 2016 in Paju City, Gyeonggi Province, Korea, focusing on the achievement of the business goals. The SWC is referred to as a city that embraces a healthy water supply system based on Smart Water Management (SWM) that promotes the efficiency of water management by combining Information and Communication Technologies (ICTs) with water and sewerage facilities. In order to evaluate the effectiveness of the SWC project, this study deploys evaluation criteria corresponding to the project objectives, and analyzes the outputs before and after the project. The results show that the SWC has contributed to enhancing water supply services and the reliability and drinking rate of tap water. Specific improvement areas include the rise of average water flow rate and water leakage reduction, the diffusion of water quality monitoring system, and the reduction of floating particle concentration and turbidity in drainage pipes was achieved. These were possible because of specific implementation plans for clear goal setting and achievement and active services for citizens. The data related to water quantity and quality showed improved performance compared to before the introduction of SWMS, which is a positive effect. However, a quantitative analysis of the outputs has limitations in identifying other external factors that have led to the changes. In the future, guidelines for spreading SWC and more comprehensive and specific evaluation indicators for SWC should be prepared, and SWMS should be developed in consideration of the needs of users.