• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.237-241
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• 2015

The reactor impedance is calculated for a planar-type cylindrical inductively coupled plasma source by expanding the electromagnetic fields into their Fourier-Bessel series forms including the three-dimensional shape of the antenna. The mode excitation method is utilized to determine the electromagnetic fields based on a Poynting theorem-like relationship. From the obtained electromagnetic fields, a tractable form of the reactor impedance is obtained as a function of various plasma and geometrical parameters and applied to carry out a parametric study.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.43-73
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• 2015

유도결합 플라즈마(inductively coupled plasma: ICP)를 이용한 물리 및 화학 증착법으로 제작된 박막 재료는 우수한 기계적, 화학적, 물리적 성질 때문에 자동차 부품이나 공구재료의 내마모, 저마찰 경질코팅, 그리고 디스플레이용 코팅 뿐만 아니라 수소 연료전지의 분리막 성능 향상을 위한 코팅, 그리고 기판에 아주 균일한 크기의 나노 분말을 형성 시키는 곳에도 응용을 할 수 있음을 여러 사례를 중심으로 살펴 본다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.933-936
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• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

• Journal of Magnetics
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• v.21 no.2
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• pp.222-228
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• 2016

Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

• Bulletin of the Korean Chemical Society
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• v.19 no.11
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• pp.1172-1174
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• 1998

Spatial(radial and height) distributions of excited argon species are measured for an inductively coupled plasma under five operating conditions: 1) no carrier gas, 2) carrier gas without aerosol, 3) carrier gas with desolvated aerosol, 4) carrier gas with aerosol, 5) carrier gas with aerosol and excess lithium. A complete RF power mapping of argon excited states is obtained. The excited states of argon for a typical analytical torch rapidly diffuse towards the center in the higher region of the plasma. The presence of excess lithium makes no significant change in the excited states of argon. The increase in the RF power increases the intensity of argon excited states uniformly across the radial coordinate.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1805-1808
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• 2003

The simultaneous determination of As(III), As(V), and DMA has been performed by ion chromatography (IC) coupled with inductively coupled plasma-mass spectrometry (ICP-MS). The separation of the three arsenic species was achieved by an anionic separator column (AS 7) with an isocratic elution system. The separated species were directly detected by ICP-MS as an element-selective detection method. The IC-ICP-MS technique was applied for the determination of arsenic species in a NIST SRM 1643d water sample. An As(III) only was detected in the sample. The detection limits of As(III), As(V) and DMA were 0.31, 0.45, and 2.09 ng/mL, respectively. It was also applied for the determination of arsenic species in a human urine obtained by a volunteer, and three arsenic species were identified. The determination of total As in human urines that were obtained from 25 volunteers at the different age was also carried out by ICP-MS.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.179-183
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• 2000

The reactive ion etching process of GaN using $BCI_3/H_2/Ar$ high density inductively coupled plasma was investigated. Results showed that both of the etch rate and the sidewall verticality significantly increased as the ICP power, bias voltage, and the $BCI_3$ ratio were increased whereas effects of the other variables were minimal. The maximum etch rate of about 175nm/min was obtained at the condition of ICP power 900W, bias voltage 400V, 4mTorr, and 60% $BCI_3$, which resulted in reasonably smooth etched surface. Etch residues were observed in the case of samples etched at the low bias conditions, which were proposed to be as the $GaCI_x$ compounds.

• Journal of the Korean Chemical Society
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• v.41 no.6
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• pp.292-298
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• 1997

An ICP(Inductively Coupled Plasma) emission spectrometer was developed with an axially viewed ICP source incorporated by a 5-turned induction coil and a torch, outer quartz tube of which was 50 mm longer than that used in conventional ICP/AES(Inductively Coupled Plasma Atomic Emission Spectrometry). The Optimization of the system has been performed in terms of the determination of signal-to-noise ratio and background intensity at various rf powers, sample flow rates, argon gas flow rates and cut-off gas flow rates. The spectro-analytical characteristics of the spectrum obtained between 200 and 500 nm was revealed to be similar compared with a vertically viewed ICP source. The detection limit of Pb(Ⅱ) at 220.35 nm was 11 ppb which was 5 times lower than that obtained with a vertically viewed ICP source.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.