• Title/Summary/Keyword: Inductively Coupled Plasma

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유도결합 플라즈마를 이용한 집속이온빔용 고휘도 이온원의 개발 및 특성연구 (Development and characteristic study of high brightness ion source using inductively coupled plasma for focused ion beam)

  • Kim, Yoon-Jae;Park, Dong-Hee;Hwang, Yong-Seok
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.494-499
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    • 2004
  • A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

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사각형 유도 결합 플라즈마 시스템의 수치 모델링 (Numerical Modeling of a Rectangular Type Inductively Coupled Plasma System)

  • 주정훈
    • 한국표면공학회지
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    • 제45권4호
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    • pp.174-180
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    • 2012
  • Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

Inductively Coupled Plasma 법을 이용한 희토류원소의 분석에 관한 연구 (A Study on the Determination of Rare Earth Elements by Inductively Coupled Plasma Spectrometry)

  • 최범석;김선태;김영만;이종욱
    • 대한화학회지
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    • 제29권4호
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    • pp.382-389
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    • 1985
  • Inductively coupled plasma(ICP)법을 이용하여 희토류원소들을 정량분석할 때 플라스마 작동 조건이 미치는 영향에 관하여 연구하였다. 플라스마 작동시 시료운반기체의 사용량을 증가시키면 희토류원소 스펙트럼선들의 검출한계는 낮아지나 이온화 방해 영향이 증가되었다. RF power의 변화는 이온화 방해에는 큰 영향을 미치지 않지만 바탕세기에 대한 스펙트럼선 세기의 비율은 RF power가 감소될수록 증가되었다. 플라스마내에서 이온화 방해 영향이 작은 위치는 스펙트럼선의 spacial profile이 최대가 되는 부분보다 약간 높은 위치이었다. 희토류원소의 분석시 많이 이용되는 스펙트럼선들의 검출한계를 측정하고 비교적 간섭영향이 작은 스펙트럼선을 선정하였다.

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원통형 Inductively Coupled Plasma (ICP) 광원 모드변환의 안테나 의존성 (Antenna Dependancy of Mode Transition in Cylindrical Inductively Coupled Plasma (ICP))

  • 최용성;조수영;김영근;김창복;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.81-86
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    • 2006
  • In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with 0.3~1.2 mm, number of turns with 4~12 turns, distance with 40~120 mm and RF power with 10~150 W, the electrical and optical properties were measured. When diameter of coil was 0.3 mm, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

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유도 결합형 열 플라즈마의 특성 연구 (A Study on the Characteristics of the Inductively Coupled thermal Plasma)

  • 신홍민;최경철;김원규;황기웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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    • pp.419-422
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    • 1991
  • A mathematical model was developed to predict the temperature, the density, and the velocity distribution of an inductively coupled thermal plasma. It was for an atmospheric pressure argon thermal plasma generated by a 4 MHz radio frequency power. It has been shown that the hottest region can be moved toward centrial region by applying an external magnetic field. Based on the results of the simulation. an ICP(Inductively Coupled thermal Plasma) system was constructed and thermal plasma was generated.

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Synthesis of Carbon Nanotubes by Using Inductively Coupled Plasma Chemical Vapor Deposition at Low Temperature

  • Kim, Young-Rae;Jang, In-Goo;Cho, Hyun-Jin;Jeon, Hong-Jun;Cho, Jung-Keun;Hwang, Ho-Soo;Kong, Byung-Yun;Lee, Nae-Sung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.768-771
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    • 2007
  • Carbon nanotubes (CNTs) were synthesized by inductively coupled plasma CVD at $450^{\circ}C$. CNTs were grown on the 1-nm-thick Fe-Ni-Co with $C_2H_2$ and $H_2$ at different pressures and plasma powers. CNTs were grown longer in height as the $H_{\alpha}/CH$ ratios became lower by decreasing plasma powers and increasing growth pressures.

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13.56MHz 유도 결합 플라즈마에서의 강자성체 페라이트 코어의 효과 (The effect of ferrite cores on the inductively coupled plasma driven at 13.56MHz)

  • 이원기;이경효;정진욱
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.197-202
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    • 2005
  • Due to high permeability of the ferrite core, the characteristics of the ICP are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in ike ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysterisis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency (${\~}$100kHz) will be greatly improved since the losses at the low frequency can be negligible.

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Correlation between Coil Configurations and Discharge Characteristics of a Magnetized Inductively Coupled Plasma

  • Cheong, Hee-Woon
    • Journal of Magnetics
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    • 제21권2호
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    • pp.222-228
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    • 2016
  • Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

직류 및 유도결합 플라즈마 마그네트론 스퍼터링법으로 제조된 HfN 코팅막의 미세구조 및 기계적 물성연구 (Microstrcture and Mechanical Properties of HfN Films Deposited by dc and Inductively Coupled Plasma Assisted Magnetron Sputtering)

  • 장훈;전성용
    • 한국표면공학회지
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    • 제53권2호
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    • pp.67-71
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    • 2020
  • For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성 (Dry Etching Characteristics of GaN using a Planar Inductively Coupled CHsub $CH_4/H_2/Ar$ Plasma)

  • 김문영;백영식;태흥식;이용현;이정희;이호준
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.616-621
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    • 1999
  • A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

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