• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.1-60.1
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• 2011

비정질 indium-gallium-zinc-oxide (a-IGZO)는 thin film transistor (TFT)에 적용되는 대표적인 active layer로써 높은 이동도를 갖고, 도핑 농도의 제어가 용이하며 낮은 온도에서도 대면적에 증착할 수 있는 특성을 가지고 있다. 특히 저온에서 대면적 증착이 가능한 장점을 갖고 있어 LCD 분야뿐만 아니라 다양한 분야에서 상용화하려는 연구가 시도되고 있다. a-IGZO를 구성하는 물질 중에 이동도에 중요한 역할을 미치는 In은 대표적인 투명전극물질인 indium-tin oxide (ITO)에서 고전류 구동에 의한 확산이 널리 알려져 이에 대한 증명과 개선을 위한 연구가 진행되고 있다. 보고된 결과에 따르면 device에 지속적인 구동 전압을 가했을 때 In이 유기층로 확산되어 organic light emitting diode(OLED)의 성능을 저하시키는 것으로 알려져 있다. 따라서, a-IGZO에서도 고전류 구동에 의한 indium의 이동이 필수불가결하다고 판단된다. 본 연구에서는 a-IGZO TFT에 고전압 구동을 반복적으로 시행함으로써 발생하는 전기적 특성의 변화를 확인하였고, 동일한 소자의 전극과 채널 사이의 계면에서 In 분포를 energy dispersive spectrometer (EDS)로 관찰하여 In 분포와 전기적 특성 간의 상관관계에 대해 연구하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.54-61
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• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.04a
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• pp.35-36
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.146-150
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• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.330-330
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• 2012

일반적으로 투명전극 재료로서 이용되는 Indium Tin Oxide (ITO)는 높은 전기전도도에도 불구하고, 가시광선 영역에서 높은 광학적 투과도를 지니고 있다. 즉, 비저항이 $10^{-3}{\Omega}/cm$ 보다 작으면서, 380 nm에서 780 nm사이의 가시광선 영역에서 80%이상의 투과도를 가지는 우수한 transparent conducting oxide 물질로 인식되고 있다. 또한 이 물질은 가시광선 영역에서의 굴절률이 대략 2정도이기 때문에, 다른 반도체재료와 진공사이의 계면에서 발생하는 반사를 줄여, 태양광전지나 LED 등에 이용될 수 있는 무반사 코팅재로 이용될 수 있다. 이러한 이유로 현재 각 분야에서 ITO에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 ITO에 대한 기초연구로서, 전자빔 증착법으로 박막을 증착시키는 동안 증착속도에 따른 박막의 물성변화를 조사하였다. 또한 수직으로 증착할 때와 Glancing Angle Deposition 방법을 이용하였을 때, 증착속도에 따른 박막의 물성변화를 비교 분석하고자 하였다. 여기서, 증착속도는 $1{\AA}/s$에서 $4{\AA}/s$ 범위로 변화를 주었고, 증착물질과 기판의 각도는 $0^{\circ}$, $15^{\circ}$, $45^{\circ}$, $75^{\circ}$로 하였다. 먼저 수직으로 증착할 때, 증착속도의 변화에 따른 반사도, 투과도 및 굴절률과 증착단면의 구조를 비교하고, 다음으로 기판에 각도를 주어 박막을 증착하였을 때의 증착속도에 따른 박막의 광학적 및 구조적 물성의 변화를 측정하였다.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.50-53
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• 2015

Indium (In) is widely used for transparent electrodes of photovoltaics as a form of indium tin oxide (ITO) due to its superior characteristics of environmental stability, relatively low electrical resistivity and high transparency to visible light. However, In has been worn off in proportion to growth the In related market, and it leads to raise of price. Although In is obtained from ITO target scarps, much harmful elements are used for the recycling process. To decrease of harmful elements, ITO swarf particles obtained from target scraps was characterized whether it is feasible to transparent conductive oxide (TCO). The ITO swarf was crushed with milling process, and it was mixed with new ITO nanoparticles. The mixed particles were well dispersed into ink solvent to make-up an ink, and it was well coated onto glass substrate. After heat-treatment at $400^{\circ}C$ under $N_2$ rich environments, optical transmittance at 550 nm and sheet resistance of the ITO ink coated layer was 71.6% and $524.67{\Omega}/{\square}$, respectively. Therefore, it was concluded that the ITO swarf was feasible to TCO of touch screen panel.