• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.171-175
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• 2002

The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.406-407
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• 2007

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1334-1338
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• 2006

In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.62-69
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• 2022

Graphene has a large surface area to volume ratio and good mechanical and electrical property and biocompatibility. This study described the electrochemical deposition and reduction of graphene oxide on the surface of indium tin oxide (ITO) glass slide and electrochemical characterization of graphen-modified ITO. Cyclic voltammetry was used for the deposition and reduction of graphene oxide. The surface of graphen-coated ITO was characterized using scanning electron microscopy and energy dispesive X-ray spectroscopy. The electrodes were evaluated by performing cyclic voltammetry and electrochemical impedance spectroscopy. The number of cycles and scan rate greatly influenced on the coverage and the degree of reduction of graphene oxide, thus affecting the electrochemical properties of electrodes. Modification of ITO with graphene generated higher current with lower charge transfer resistance at the electrode-electrolyte interface. Glucose oxidase was immobilized on the graphene-modified ITO and has been found to successfully generate electrons by oxidizing glucose.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.83-84
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• 1994

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.2-2
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• 2003

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.612-616
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• 2009

Transparent conductive oxide (TCO) films have been widely used in the field of flat panel display industry. Transparent conductive indium zinc oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for indium tin oxide (ITO) films. In this study, using a $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10wt% as a target, IZO films were prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of substrate temperature and $O_2$ introduction flow rate were investigated in terms of electrical and optical properties of deposited IZO films. The best electrical and optical properties we obtained from this study were sheet resistance value of $5.446{\times}10^2{\Omega}/{\boxempty}$ and optical transmittance of 87.4% at 550 nm at $O_2$ introduction flow rate of 4 sccm, deposition rate of $2{\AA}$/sec, thickness of 1000 $\AA$ and substrate temperature of $150^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.34 no.4
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• pp.705-716
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• 2017

In this study, Indium-Titanium hydroxide particle with 0.5, 1.0, 1.5 wt% of $TiO_2$ were synthesized by sol process and adding the base, ITiO(Indium Titanium Oxide) particles were obtained by gelling at $200^{\circ}C$ and $500^{\circ}C$. The ITiO particle's size with gel process at $200^{\circ}C$ was smaller than ITiO particle's size with gel process $500^{\circ}C$. The ITiO particle with gel process at $200^{\circ}C$ was used to fabricate dense ITiO target. ITiO targets with 0.5, 1.0, 1.5 wt% of $TiO_2$ were fabricated and used to obtain ITiO thin films onto glass by sputtering. Among those sputtered ITiOs' thin films, ITiO thin film with 0.4 % of $O_2$ and 0.5 wt% of $TiO_2$ showed the lowest specific resistance, highest charge mobility and lowest carrier concentration. It was found the light transmittance of the ITiO film were increased highly compared to light transmittance of ITO (Indium Tin Oxide) thin film over Infrared wavelength ranges.

• Bulletin of the Korean Chemical Society
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• v.26 no.9
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• pp.1354-1358
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• 2005

Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.33-36
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• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.