• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.467-468
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• 2006

To perform the comparative study, we experimented on two differential epitaxial structures, the conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs structure and the InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP/n-InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance; over about 3.5 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.21-25
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Steel and Composite Structures
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• v.28 no.2
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• pp.233-250
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• 2018

Back-to-back built-up cold-formed steel un-lipped channel sections are used in cold-formed steel structures; such as trusses, wall frames and portal frames. In such built-up columns, intermediate fasteners resist the buckling of individual channel-sections. No experimental tests or finite element analyses have been reported in the literature for back-to-back built-up cold-formed steel un-lipped channel sections and specially investigated the effect of screw spacing on axial strength of such columns. The issue is addressed in this paper. The results of 95 finite element analyses are presented covering stub to slender columns. The finite element model is validated against the experimental tests recently conducted by authors for back-to-back built-up cold-formed steel lipped channel sections. The verified finite element model is then used for the purposes of a parametric study to investigate the effect of screw spacing on axial strength of back-to-back built-up cold-formed steel un-lipped channel sections. Results are compared against the built-up lipped channel sections and it is shown that the axial strength of un-lipped built-up sections are 31% lesser on average than the built-up lipped channel sections. It was also found that the American Iron and Steel Institute (AISI) and the Australian and New Zealand Standards were over-conservative by around 15% for built-up columns failed through overall buckling, however AISI and AS/NZS were un-conservative by around 8% for built-up columns mainly failed by local buckling.

• Steel and Composite Structures
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• v.21 no.3
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• pp.629-659
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• 2016

In cold-formed stainless steel lipped channel-sections, web openings are becoming increasingly popular. Such openings, however, result in the sections becoming more susceptible to web crippling, especially under concentrated loads applied near the web opening. This paper presents the results of a finite element parametric study into the effect of circular web openings on the web crippling strength of cold-formed stainless steel lipped channel-sections for the interior-one-flange (IOF) loading condition. This involves a bearing load applied to the top flange of a length of member, away from the end supports. The cases of web openings located centred beneath the bearing load (i.e. beneath the bearing plate delivering the load) and offset to the bearing plate, are considered. Three grades of stainless steel are considered: duplex EN1.4462, austenitic EN1.4404 and ferretic EN1.4003. In total, 2218 finite element models were analyzed. From the results of the parametric study, strength reduction factors for load bearing capacity are determined, where these reduction factors are applied to the bearing capacity calculated for a web without openings, to take account the influence of the web openings. The strength reduction factors are first compared to equations recently proposed for cold-formed carbon steel lipped channel-sections. It is shown that for the case of the duplex grade, the strength reduction factor equations for cold-formed carbon steel are conservative but only by 2%. However, for the cases of the austentic and ferritic grades, the cold-formed carbon steel equations are around 9% conservative. New strength reduction factor equations are proposed for all three stainless steel grades.

• Steel and Composite Structures
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• v.23 no.3
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• pp.363-383
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• 2017

In cold-formed stainless steel lipped channel-sections, use of web openings for service purposes are becoming increasingly popular. Web openings, however, result in the sections becoming more susceptible to web crippling. This paper presents a finite element investigation into the web crippling strength of cold-formed stainless steel lipped channel-sections with circular web openings under the interior-two-flange (ITF) loading condition. The cases of web openings located centred and offset to the bearing plates are considered in this study. In order to take into account the influence of the circular web openings, a parametric study involving 2,220 finite element analyses was performed, covering duplex EN1.4462, austenitic EN1.4404 and ferritic EN1.4003 stainless steel grades. From the results of the parametric study, strength reduction factor equations are proposed. The strengths obtained from reduction factor equations are first compared to the strengths calculated from the equations recently proposed for cold-formed carbon steel lipped channel-sections. It is demonstrated that the strength reduction factor equations proposed for cold-formed carbon steel are unconservative for the stainless steel grades by up to 17%. New coefficients for web crippling strength reduction factor equations are then proposed that can be applied to all three stainless steel grades.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Journal of the Korean Geophysical Society
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• v.5 no.1
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• pp.19-27
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• 2002

Geophysical surveys(self-potential, electromagnetic, electrical resistivity, and seismic refraction methods) were performed to delineate the flow channel of leachate from a AMD (acid mine drainage) by correlating the anomalies to geochemical characteristics at an abandoned mine (Jangpoong mine). The geophysical responses attempted to be correlated with water sample analysis data(pH, EC, heavy metals, ${SO_4}^{-2}$). Electrical dipole-dipole resistivity sections represent the low-resistivity zone trending northwest, which indicates the leachate flow by AMD along the contact of the mine waste rock dump and the bedrock. From the overall points of geophysical and geochemical anomalies, it is summarized that the flow channel of leachate by AMD can be successfully imaged with composite interpretations on the geophysical and geochemical studies.