• International Journal of Industrial Entomology and Biomaterials
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• 제44권1호
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• pp.21-27
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• 2022

Different parts of the mulberry plant are described to be potential sources of polyphenolics exhibiting strong antioxidant activity. In this study, we prepared various aqueous extracts of mulberry root bark by subjecting to steam at different temperatures and time intervals (45℃, 15 h; 70℃, 15 h; 95℃, 6 h and 95℃, 15 h) followed by extracting at 80℃ for 1 h. The total polyphenolic content ranged from 66.82-101.20 mg gallic acid equivalent (GE)/g of extract whereas the flavonoids were in the range of 13.03-25.23 mg catechin equivalent (CE)/g of extract. The extracts also exhibited strong antioxidant activities (0.99-1.66 mg trolox equivalent (TE)/g of extract in DDPH assay and 10.65-16.26 mg TE/g of extract in ABTS assay). This study clearly showed an improvement in the antioxidant activity of the water extract of mulberry root bark by the steam treatment, which can be used as a tea or health-promoting materials.

• 한국방사선학회논문지
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• 제13권7호
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• pp.1025-1033
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• 2019

뇌 질환과 두경부 검사에서 전산화단층촬영의 선속 경화현상이 없는 자기공명영상이 조직의 높은 대조도와 우수한 분해능의 영상을 획득하는 검사 방법으로 인식되고 있지만 구강 내 금속 이식물이 있는 경우는 자화율 인공물(magnetic susceptibility artifact)이 발생되어 영상 진단에 장해 요소가 된다. 따라서 본 연구는 자기공명영상에서 치아 임플란트와 보철에 의한 인공물 감소 방안을 강구하고자 한다. 자기공명영상에서 임플란트에 의한 인공물 발생은 GE 기법에서 TE가 짧을수록 신호 크기가 증가하였고, 물의 온도 변화에서는 일관성이 없게 나타났다. SE 기법에서도 공기보다 물의 신호 크기가 전반적으로 높았지만, 신호대 잡음비는 공기와 온도에 의한 차이가 없었다. EPI 기법에서는 공기보다 물이 있을 때 정량적, 정성적으로 인공물이 적게 발생한 영상을 얻을 수 있었고, 특히 물 온도 20°와 30°에서 신호 대 잡음비가 가장 높게 측정되었다. 결론적으로 EPI 기법에서 물 온도 20°와 30°의 물주머니를 이용하여 뇌 확산강조영상을 획득하면 임플란트와 보철물에 의한 자화율인공물이 감소되어 보다 진단적 가치가 있는 영상을 획득할 수 있을 것으로 사료된다.

• 한국재료학회지
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• 제27권8호
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• pp.438-444
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• 2017

In this work, the effects of hydrogen reduction on the microstructure and thermoelectric properties of $(GeTe)_{0.85}(AgSbTe_2)_{0.15}$ (TAGS-85) were studied by a combination of gas atomization and spark plasma sintering. The crystal structure and microstructure of TAGS-85 were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The oxygen content of both powders and bulk samples were found to decrease with increasing reduction temperature. The grain size gradually increased with increasing reduction temperature due to adhesion of fine grains in a temperature range of 350 to $450^{\circ}C$. The electrical resistivity was found to increase with reduction temperature due to a decrease in carrier concentration. The Seebeck coefficient decreased with increasing reduction temperature and was in good agreement with the carrier concentration and carrier mobility. The maximum power factor, $3.3{\times}10^{-3}W/mK^2$, was measured for the non-reduction bulk TAGS-85 at $450^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• 대한방사선기술학회지:방사선기술과학
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• 제41권2호
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• pp.109-113
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• 2018

Despite the continuous development of software, it is continuously pursued to enlarge the examination area of FOV in order to reduce the factors of inconsistency in images that appear in continuous examination during wide area examination using contrast agent such as whole body angiography. In this study, we investigated the optimal FOV by comparing the SNR values according to the changes of FOV. The change of the FOV was gradually changed to $270{\times}200$, $300{\times}223$, $330{\times}244$, $360{\times}266$ and $380{\times}281$. SE images at TR 450 msec and TE 10 msec, FSE images at TR 2,000 msec, TE 80 msec, and GE images were scanned at TR 117 msec, and TE 16 msec. SNR values were calculated from the mean values of signal intensities of five phantom images and the signal intensity values of four background standard deviations. As a result of the study, the signal intensity and the SNR value according to the change of the FOV value gradually increased as the FOV was increased, but it was found that the SNR value decreased at a constant size. In conclusion, the results are different from previous studies that the SNR increases as the FOV increases. The cause of these results could not be confirmed. However methods that can be imaged and included within the effective FOV should be considered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.368-371
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• 1988

The MS diodes made by evarporating In, Au/Ge on the p-GaP substrates, and the p-n diode made by diffusing Te in the p-GaP were fabricated, and its electric-optical characteristics were surveyed. The maximum peak of E.L spectrum was shifted towards the longer wavelengths with increasing temperature, and its intensity increased with in-creasing of current. The MS diodes were fabricated rather easily and is electric-optical characteristics was as good as that of p-n diodes.

• 대한자기공명의과학회:학술대회논문집
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• 대한자기공명의과학회 2002년도 제7차 학술대회 초록집
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• pp.84-84
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• 2002

목적： 야간성 전두협 발작 (Nocturnal frontal lobe epilepsy NFLE)은 임상적으로 특징적인 야간성 운동성 발작으로 잘 알려져 있지만 일반적인 MR 영상에서는 대부분에서는 특이한 소견을 보이지 않아 확산 텐서 영상 (DTI)에서의 이상 소견 발현 유무를 알아보고자 한다. 대상 및 방법： 임상적 소견과, EEG 소견으로 진단된 NFLE 환자 6명을 대상으로 DTI 영상을 촬영하였다. 남자 2명, 여자 4명으로 평균연령은 32세 이었다. DTI영상은 single shot spin echo EPI 펄스 열을 사용하였고 사용한 영상 변수는 b value는 0, 1000 s/$\textrm{mm}^2$, TR 10000 msec, TE 71.8/72.3 msec, matrix 128$\times$128 (256 reconstruction), FOV 23cm, 5mm thickness, 2mm interstice gap, NEX 1. 19 slices, time은 4min 21sec (25방향) 이었다. 대조군으로 정상 성인 10명 (평균연령 31세)에서 동일한 방법으로 DTI 영상을 시행하여 분할 비등방도 (fractional anisotropy) 영상을 얻고 전두엽 백질에서 분할 비등방도 값을 측정하여 NFLE 환자군과 비교하였다.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.37-40
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• 2014

A novel memory is reported, in which $Ge_2Sb_2Te_5$ (GST) has been used as a floating gate. The threshold voltage was shifted due to the phase transition of the GST layer, and the hysteretic behavior is opposite to that arising from charge trapping. Finite Element Modeling (FEM) was adapted, and a new simulation program was developed using c-interpreter, in order to analyze the small shift of threshold voltage. The results show that GST undergoes a partial phase transformation during the process of RESET or SET operation. A large $V_{TH}$ shift was observed when the thickness of the GST layer was scaled down from 50 nm to 25 nm. The novel 1 transistor PCM (1TPCM) can achieve a faster write time, maintaining a smaller cell size.