Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.11a
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- Pages.368-371
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- 1988
The electroluminescence of the GaP diode
GaP Diode의 전계루 미네센스
- Jung, K.U. (Kwangwoon University) ;
- Kim, K.H. (Kwangwoon University) ;
- Moon, D.C. (Kwangwoon University) ;
- Kim, S.T. (Daejun national University of technology)
- Published : 1988.11.25
Abstract
The MS diodes made by evarporating In, Au/Ge on the p-GaP substrates, and the p-n diode made by diffusing Te in the p-GaP were fabricated, and its electric-optical characteristics were surveyed. The maximum peak of E.L spectrum was shifted towards the longer wavelengths with increasing temperature, and its intensity increased with in-creasing of current. The MS diodes were fabricated rather easily and is electric-optical characteristics was as good as that of p-n diodes.
Keywords