• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.39-40
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• 1995

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.147-152
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• 2017

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.19-24
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• 2004

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.424-432
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• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.117-117
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.102-102
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• 2007

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.336-343
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• 2018

We herein present the design and fabrication of a Rx core chip operating in the X-band (10.5~13 GHz) using Win's commercial $0.25-{\mu}m$ GaAs pHEMT process technology. The X-band core chip comprises a low-noise amplifier, a four-bit phase shifter, and a serial-to-parallel data converter. The size is $1.75mm{\times}1.75mm$, which is the state-of-the-art size. The gain and noise figure are more than 10 dB but less than 2 dB, and both the input and output return losses are less than 10 dB. The RMS phase error is less than $5^{\circ}$, and the P1dB is 2 dBm at 12.5 GHz, the performance of which is equivalent to other GaAs core chips. The fabricated core chip was packaged in a QFN package type with a size of $3mm{\times}3mm$ for the convenience of assembly. We confirmed that the performance of the packaged core chip was almost the same as that of the chip itself.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.56-61
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• 1997

I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.127-132
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• 2018

In this paper, a high conversion gain cascode mixer was designed in W-band and verified by the fabrication and measurements. In the high frequency band such as a W-band, the conversion loss of a mixer is increased because of the poor performance of transistors. This high conversion loss of the mixer requires additional circuits which can give an extra gain such as an RF buffer amplifier, and this can affects the linearity and stability of the overall systems. Therefore, it is necessary to maximize the conversion gain of the mixer. To maximize the conversion gain of the mixer, biases of the transistor were optimized, and output load impedance was optimized by the load-pull simulations. The designed mixer was fabricated in $0.1-{\mu}m$ GaAs pHEMT technology and verified by the measurements. The measurement results shows a maximum conversion gain of -4.7 dB at W-band and an input 1-dB compression point of 2.5 dBm.