• 제목/요약/키워드: InGaAs/InAlAs

검색결과 720건 처리시간 0.021초

저강도레이저 조사가 근육압좌손상 후 척수분절의 EGF 발현에 미치는 영향 (Effects of Low Power Laser for the Expression of EGF after Muscle Crush Injury)

  • 김석범;김동현;남기원;이선민;김진상
    • The Journal of Korean Physical Therapy
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    • 제14권2호
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    • pp.16-25
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    • 2002
  • Low energy laser irradiation(LELI) therapy in physical therapy is widespread but the mechanisms are not fully understood. The purpose of the present study was to examine the epidermal growth factor(EGF)'s expression within lumbar spinal cord which corresponding with crushed extensor digitorum longus(EDL) of rats after low-power laser irradiation applied. After a crushed injury on the right EDL, low-power laser irradiation was applied by using 2000mW, 2000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The laser treatment was performed with 10 minutes daily for 3days. After EDL crush injury, EGF immunoreactive positive neurons in experimental group were progressively decreased from the first to third days. Especially 1 day subgroup is highly expressed in dorsal horn(Lamina I, II, III) and around of central cannal of spinal cord(Lamina VII). Control group was only expressed slightly at 3 days. This study suggests that LELI stimulate that release and migration of EGF in spinal cord, which distict to wound site, therfore promote wound healing of EDL crush injury.

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The Application of Radiolabeled Targeted Molecular Probes for the Diagnosis and Treatment of Prostate Cancer

  • Luyi Cheng;TianshuoYang;Jun Zhang;Feng Gao;Lingyun Yang;Weijing Tao
    • Korean Journal of Radiology
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    • 제24권6호
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    • pp.574-589
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    • 2023
  • Radiopharmaceuticals targeting prostate-specific membrane antigens (PSMA) are essential for the diagnosis, evaluation, and treatment of prostate cancer (PCa), particularly metastatic castration-resistant PCa, for which conventional treatment is ineffective. These molecular probes include [68Ga]PSMA, [18F]PSMA, [Al18F]PSMA, [99mTc]PSMA, and [89Zr]PSMA, which are widely used for diagnosis, and [177Lu]PSMA and [225Ac]PSMA, which are used for treatment. There are also new types of radiopharmaceuticals. Due to the differentiation and heterogeneity of tumor cells, a subtype of PCa with an extremely poor prognosis, referred to as neuroendocrine prostate cancer (NEPC), has emerged, and its diagnosis and treatment present great challenges. To improve the detection rate of NEPC and prolong patient survival, many researchers have investigated the use of relevant radiopharmaceuticals as targeted molecular probes for the detection and treatment of NEPC lesions, including DOTA-TOC and DOTA-TATE for somatostatin receptors, 4A06 for CUB domain-containing protein 1, and FDG. This review focused on the specific molecular targets and various radionuclides that have been developed for PCa in recent years, including those mentioned above and several others, and aimed to provide valuable up-to-date information and research ideas for future studies.

반도체 다이오드 레이저를 사용한 U, Th 및 Rb 의 Optogalvanic Spectroscopy 에 관한 연구 (Optogalvanic Spectroscopy of U, Th and Rb using Diode Lasers)

  • 이상천
    • 대한화학회지
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    • 제38권1호
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    • pp.34-40
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    • 1994
  • 다이오드 레이저를 optogalvanic spectroscopy에 이용하여 우라늄, 토륨 및 루비듐에 대한 전자전이 및 다이오드 레이저의 분광학적 특성을 살펴보았다. 흡수스펙트럼의 분석은 속빈 음극관내 음극표면에서 튕김에 의해 형성된 고온의 금속원자 기체를 다이오드 레이저를 이용하여 금속원자의 광흡수 현상에 따른 임피던스의 변화를 측정함으로써 수행되었다. 다이오드 레이저를 사용하여 자연산 악티늄족 원소인 토륨과 우라늄의 검출을 수행하였다. 본 실험에 이용된 optogalvanic spectroscopy에서는 Doppler효과로 인한 띠 나비에 제한이 있어 초미세 갈라짐이나 동위원소 선이동을 관찰하는데 어려움이 있었다. 하지만 루비듐 780.023 nm에서는 Doppler 띠 넓힘이 있음에도 불구하고 동위원소의 선이동과 초미세 갈라짐을 관찰할 수 있었다. 본 연구에서는 다이오드 레이저가 방사능을 지닌 악티늄족 원소들의 검출과 이들의 동위원소 존재비를 측정할 때 유용하고, 별로 알려지지 않은 란탄족 및 악티늄족의 초미세 갈라짐 상수와 같은 분광학적으로 중요한 파라미터를 구하는데에도 긴요하게 쓰일 수 있음을 고찰하였다.

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화학기계적 연마기술 연구개발 동향: 입자 거동과 기판소재를 중심으로 (Chemical Mechanical Polishing: A Selective Review of R&D Trends in Abrasive Particle Behaviors and Wafer Materials)

  • 이현섭;성인하
    • Tribology and Lubricants
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    • 제35권5호
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    • pp.274-285
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    • 2019
  • Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

Effectiveness of low-level laser therapy and chewing gum in reducing orthodontic pain: A randomized controlled trial

  • Celebi, Fatih;Bicakci, Ali Altug;Kelesoglu, Ufuk
    • 대한치과교정학회지
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    • 제51권5호
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    • pp.313-320
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    • 2021
  • Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

Comparison of Characteristics of Gamma-Ray Imager Based on Coded Aperture by Varying the Thickness of the BGO Scintillator

  • Seoryeong Park;Mark D. Hammig;Manhee Jeong
    • Journal of Radiation Protection and Research
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    • 제47권4호
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    • pp.214-225
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    • 2022
  • Background: The conventional cerium-doped Gd2Al2Ga3O12 (GAGG(Ce)) scintillator-based gamma-ray imager has a bulky detector, which can lead to incorrect positioning of the gammaray source if the shielding against background radiation is not appropriately designed. In addition, portability is important in complex environments such as inside nuclear power plants, yet existing gamma-ray imager based on a tungsten mask tends to be weighty and therefore difficult to handle. Motivated by the need to develop a system that is not sensitive to background radiation and is portable, we changed the material of the scintillator and the coded aperture. Materials and Methods: The existing GAGG(Ce) was replaced with Bi4Ge3O12 (BGO), a scintillator with high gamma-ray detection efficiency but low energy resolution, and replaced the tungsten (W) used in the existing coded aperture with lead (Pb). Each BGO scintillator is pixelated with 144 elements (12 × 12), and each pixel has an area of 4 mm × 4 mm and the scintillator thickness ranges from 5 to 20 mm (5, 10, and 20 mm). A coded aperture consisting of Pb with a thickness of 20 mm was applied to the BGO scintillators of all thicknesses. Results and Discussion: Spectroscopic characterization, imaging performance, and image quality evaluation revealed the 10 mm-thick BGO scintillators enabled the portable gamma-ray imager to deliver optimal performance. Although its performance is slightly inferior to that of existing GAGG(Ce)-based gamma-ray imager, the results confirmed that the manufacturing cost and the system's overall weight can be reduced. Conclusion: Despite the spectral characteristics, imaging system performance, and image quality is slightly lower than that of GAGG(Ce), the results show that BGO scintillators are preferable for gamma-ray imaging systems in terms of cost and ease of deployment, and the proposed design is well worth applying to systems intended for use in areas that do not require high precision.

엑시머 레이저를 사용한 LLO 시스템 설계 및 분석 (Design and Analysis of a Laser Lift-Off System using an Excimer Laser)

  • 김보영;김준하;변진아;이준호;서종현;이종무
    • 한국광학회지
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    • 제24권5호
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    • pp.224-230
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    • 2013
  • 레이저 리프트 오프(Laser Lift-Off: LLO)는 수직형 LED 제조를 위하여 GaN 또는 AlN 박막을 사파이어 웨어퍼로부터 레이저를 이용하여 제거하는 공정으로 광원, 레이저의 출력 파워를 조절해주는 감쇠기, 빔의 형태를 잡아주는 빔 성형 광학계, 원하는 빔 사이즈를 만들어 주고 빔을 균일하게 섞어주는 빔 균일 광학계, 기판에 투사 이전에 빔을 한번 잘라주는 조리개 부분과 마스크 단에서 잘린 빔을 기판에 투사해주는 투사렌즈 부분으로 구성되어 있다. 본 논문에서는 LLO 시스템을 구성하고 있는 광학계 중 감쇠기와 투사렌즈 부분의 설계 및 분석을 진행하였다. 투사렌즈의 $7{\times}7mm^2$ 빔 사이즈 구현을 위하여 광학 설계 프로그램인 지맥스를 통해 설계 및 초점심도를 분석하였으며, 조명 설계 프로그램인 라이트 툴을 사용하여 빔 사이즈 및 균일도를 분석하였다. 성능 분석 결과 사각형 빔의 크기 $6.97{\times}6.96mm^2$, 균일도 91.8%, 초점심도 ${\pm}30{\mu}m$를 확인하였다. 또한 고출력의 엑시머레이저의 빔 강도를 감쇠시키기 위한 장치인 감쇠기의 투과율을 높이기 위하여 에센설 맥클라우드 코팅 프로그램을 사용하여 유전체 코팅을 실시한 결과 총 23층의 박막과 s 편광의 입사각도 $45{\sim}60^{\circ}$에서 10-95%의 투과율을 확인 할 수 있었다.

Charge Pumping Method를 이용한 Silicon-Al2O3-Nitride-Oxide-Silicon Flash Memory Cell Transistor의 트랩과 소자 (Analysis Trap and Device Characteristic of Silicon-Al2O3-Nitride-Oxide-Silicon Memory Cell Transistors using Charge Pumping Method)

  • 박성수;최원호;한인식;나민기;이가원
    • 대한전자공학회논문지SD
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    • 제45권7호
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    • pp.37-43
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    • 2008
  • 본 논문에서는 전하 펌프 방법 (Charge Pumping Method, CPM)를 이용하여 서로 다른 질화막 층을 가지는 N-Channel SANOS (Silicon-$Al_2O_3$-Nitride-Oxide-Silicon) Flash Memory Cell 트랜지스터의 트랩 특성을 규명하였다. SANOS Flash Memory에서 계면 및 질화막 트랩의 중요성은 널리 알려져 있지만 소자에 직접 적용 가능하면서 정화하고 용이한 트랩 분석 방법은 미흡하다고 할 수 있다. 기존에 알려진 분석 방법 중 전하 펌프 방법은 측정 및 분석이 간단하면서 트랜지스터에 직접 적용이 가능하여 MOSFET에 널리 사용되어왔으며 최근에는 MONOS/SONOS 구조에도 적용되고 있지만 아직까지는 Silicon 기판과 tunneling oxide와의 계면에 존재하는 트랩 및 tunneling oxide가 얇은 구조에서의 질화막 벌크 트랩 추출 결과만이 보고되어 있다. 이에 본 연구에서는 Trapping Layer (질화막)가 다른 SONOS 트랜지스터에 전하 펌프 방법을 적용하여 Si 기판/Tunneling Oxide 계면 트랩 및 질화막 트랩을 분리하여 평가하였으며 추출된 결과의 정확성 및 유용성을 확인하고자 트랜지스터의 전기적 특성 및 메모리 특성과의 상관 관계를 분석하고 Simulation을 통해 확인하였다. 분석 결과 계면 트랩의 경우 트랩 밀도가 높고 trap의 capture cross section이 큰 소자의 경우 전자이동도, subthreshold slop, leakage current 등의 트랜지스터의 일반적인 특성 열화가 나타났다. 계면 트랩은 특히 Memory 특성 중 Program/Erase (P/E) speed에 영향을 미치는 것으로 나타났는데 이는 계면결함이 많은 소자의 경우 같은 P/E 조건에서 더 많은 전하가 계면결함에 포획됨으로써 trapping layer로의 carrier 이동이 억제되기 때문으로 판단되며 simulation을 통해서도 동일한 결과를 확인하였다. 하지만 data retention의 경우 계면 트랩보다 charge trapping layer인 질화막 트랩 특성에 의해 더 크게 영향을 받는 것으로 나타났다. 이는 P/E cycling 횟수에 따른 data retention 특성 열화 측정 결과에서도 일관되게 확인할 수 있었다.

비대칭 MQW 구조를 이용한 Deep-UV LED의 전기적/광학적 특성 (Analysis of Electrical/optical Characteristics Using Asymmetric MQW Structures for Deep-UV LEDs)

  • 손성훈;김수진;김태근
    • 대한전자공학회논문지SD
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    • 제49권5호
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    • pp.10-15
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    • 2012
  • 본 논문에서는 고효율 고출력 DUV(Deep Ultra Violet)-LED(Light Emitting Diodes)의 구현을 위하여 n-side에서 p-side로 well 두께를 다르게 형성하는 비대칭 MQW 에피구조를 제안하였다. 제안된 구조의 물리적 해석을 위해 상용화된 3차원 시뮬레이터 SimuLEDTM을 이용하여 소자의 전기적/광학적 특성을 비교 분석 하였다. 시뮬레이션 결과, 본 연구에서 제안한 B구조(n-side에서 p-side 방향으로 well 두께를 2 nm, 3 nm, 4 nm 로 제작)의 에피층을 가지는 UV-LED는 기본 MQW 에피구조를 가지는 UV-LED와 동작전압은 8.9 V로 동일한 값을 가졌지만 광출력은 기본구조의 10.6 mW 에 비해 약 1.17배 향상된 12.4 mW의 값을 가지는 것을 확인하였다.

Effect of low-level laser therapy on bisphosphonate-treated osteoblasts

  • Shin, Sang-Hun;Kim, Ki-Hyun;Choi, Na-Rae;Kim, In-Ryoung;Park, Bong-Soo;Kim, Yong-Deok;Kim, Uk-Kyu;Kim, Cheol-Hun
    • Maxillofacial Plastic and Reconstructive Surgery
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    • 제38권
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    • pp.48.1-48.8
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    • 2016
  • Background: This study investigates the effect of alendronate-treated osteoblasts, as well as the effect of low-level laser therapy (LLLT) on the alendronate-treated osteoblasts. Bisphosphonate decreases the osteoblastic activity. Various treatment modalities are used to enhance the bisphosphonate-treated osteoblasts; however, there were no cell culture studies conducted using a low-level laser. Methods: Human fetal osteoblastic (hFOB 1.19) cells were treated with $50{\mu}M$ alendronate. Then, they were irradiated with a $1.2J/cm^2$ low-level Ga-Al-As laser (${\lambda}=808{\pm}3nm$, 80 mW, and 80 mA; spot size, $1 cm^2$; NDLux, Seoul, Korea). The cell survivability was measured with the MTT assay. The three cytokines of osteoblasts, receptor activator of nuclear factor ${\kappa}B$ ligand (RANKL), osteoprotegerin (OPG), and macrophage colony-stimulating factor (M-CSF) were analyzed. Results: In the cells treated with alendronate at concentrations of $50{\mu}M$ and higher, cell survivability significantly decreased after 48 h (p < 0.05). After the applications of low-level laser on alendronate-treated cells, cell survivability significantly increased at 72 h (p < 0.05). The expressions of OPG, RANKL, and M-CSF have decreased via the alendronate. The RANKL and M-CSF expressions have increased, but the OPG was not significantly affected by the LLLT. Conclusions: The LLLT does not affect the OPG expression in the hFOB cell line, but it may increase the RANKL and M-CSF expressions, thereby resulting in positive effects on osteoclastogenesis and bone remodeling.