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Analysis of Electrical/optical Characteristics Using Asymmetric MQW Structures for Deep-UV LEDs  

Son, Sung-Hun (School of Electrical Engineering, Korea University)
Kim, Su-Jin (School of Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.49, no.5, 2012 , pp. 10-15 More about this Journal
Abstract
In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.
Keywords
Aluminum Gallium-nitride(AlGaN); DUV-LEDs; asymmetric MQW;
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