• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.58-59
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• 1997

• 한국산학기술학회논문지
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• 제5권4호
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• pp.336-339
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• 2004

본 논문은 Al/sub x//Ga/sub 1-x//As/Ga/sub y//In/sub l-y//As/GaAs 이종접합 소자의 2차원적 산란율을 해석하였다. 사각 양자 우물의 전자 준위는 슈뢰딩거와 포아송 방정식의 연계풀이에 의해 수치해석 적으로 해석하였다. 수치해석으로 얻어진 파동함수와 에너지 준위를 이용하여 이 구조에서 주요한 2차원 산란율들을 구하였다. 극성광학 포논, 음향 포논, 압전 산란, 이온화된 불순물 산란, 그리고 합금 산란이 첫 번째 두개의 하부 밴드에 대해 고려되었다. 또한 2차원에 대해 구하여진 이 결과는 같은 영역에서의 3차원 산란율과 비교하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.637-640
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• 1998

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

• 한국결정성장학회지
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• 제23권4호
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• pp.161-166
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• 2013

실리콘 기판 위에 GaN를 성장하기 위해서 AlN 완충층을 사용해 왔다. 그러나 AlN은 아직까지 high doping이 쉽지 않기 때문에, 이로 인해 AlN를 전자소자나 광소자 제작을 위한 완충층으로 이용하는 경우 직렬 저항의 증가라는 문제가 발생할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위해 AlN 완충층 대신에 금속 완충층을 사용하여 실리콘 기판 위에 GaN 박막 성장실험을 수행하였다. Al, Ti, Cr 그리고 Au 등을 금속 완충층으로 사용하여 실리콘 기판 위에 GaN 층을 성장하였다. 성장된 GaN 박막의 표면 특성을 분석하기 위해 광학현미경과 SEM을 사용하였고, 결정성과 광학적 특성을 평가하기 위하여 PL과 XRD 분석을 실시하였으며 AlN 완충층을 사용한 경우와 금속 완충층을 사용한 경우의 저항 차이를 확인하기 위하여 전류-전압 특성을 측정하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.169-171
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• 1989

The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

• Korean Journal of Acupuncture
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• 제28권2호
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• pp.37-47
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• 2011

Objectives : We have studied the effects of GaAlAs (808 nm) low level laser therapy (LLLT) and acupuncture at BL40 on neuropathic pain in rats induced by lumbar spinal nerve 5 ligation. Methods : To produce the model of neuropathic pain, under isoflurane 2.5% anesthesia, the lumbar spinal nerve 5 was ligated by 6-0 silk thread. After neuropathic surgery, we examined if the animals exhibited the behavioral sign of allodynia. The allodynia was assessed by stimulating the medial malleolus with von Frey filament and acetone. Three weeks after the neuropathic surgery, GaAlAs (808 nm) low level laser and acupuncture was inserted at BL40 once a day for 6 days. We examined the withdrawal response of neuropathic rats' legs by von Frey filament and acetone stimulation. And also the author examined c-Fos, nociceptin and nociceptin receptor in the midbrain central gray of neuropathic rats. Results : The GaAlAs (808 nm) low level laser therapy and acupuncture at BL40 decreased the withdrawal response of mechanical allodynia that assessed with von Frey filament in LLLT group on 5 and 6 times and with acetone in AT group and LLLT on 6times. The LLLT and acupuncture at BL40 decreased the c-Fos protein expression in AT and LLLT groups. The 808 nm LLLT and acupuncture at BL40 decreased the nociceptin protein and nociceptin receptor protein in LLLT group. Conclusions : We have noticed that GaAlAs (808 nm) LLLT and acupuncture at BL40 decreased mechanical allodynia in the model of neuropathic pain. c-Fos, nociceptin and nociceptin receptor expression in the central gray of that group was also decreased. This study can be used as a basic resource on a study and a treatment of pain.

• 한국재료학회지
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• 제19권7호
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• 한국초전도ㆍ저온공학회논문지
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• 제24권2호
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• pp.23-26
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• 2022

A lossless transport of an arbitrary waveform in a frequency range of 10⁶-10⁹ Hz through a conduction channel in a cryogenic temperature is of importance for a high-speed operation of quantum device. However, it is hard to use a commercial oscilloscope to directly detect the waveform travelling in a device located in a cryogenic system. Here, we developed a cryogenic voltage sampling technique by using a Schottky barrier gate prepared on a surface of a GaAs/AlGaAs device, which revealed that an incident rectangle waveform can transport through a 1 mm long two-dimensional conduction channel without waveform deformation up to 20 MHz, while further study is needed to increase the detection frequency.

• ETRI Journal
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• 제18권3호
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.