Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2013.23.4.161

Effect of metal buffer layers on the growth of GaN on Si substrates  

Lee, Jun Hyeong (Department of Applied Sciences, Korea Maritime University)
Yu, Yeon Su (Department of Applied Sciences, Korea Maritime University)
Ahn, Hyung Soo (Department of Applied Sciences, Korea Maritime University)
Yu, Young Moon (Korea LED-Marine Convergence Technology R&D Center, Pukyong National University)
Yang, Min (Department of Applied Sciences, Korea Maritime University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.23, no.4, 2013 , pp. 161-166 More about this Journal
Abstract
AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.
Keywords
GaN; Buffer layer; AlN buffer layer; Si; Melt-back etching; Metal buffer layer; MOCVD;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D.K. Kim and C.B. Park, "Growth of crack-free GaN films on Si(111) substrates with AlN buffer layers", J. Kor. Phys. Soc. 49 (2006) 1497.
2 A. Dadgar, P. Veit, F. Schulze, J. Blasing, A. Krtschil, H. Witte, A. Diez, T. Hempel, J. Christen, R. Clos and A. Krost, "MOVPE growth of GaN on Si - substrates and strain", Thin Solid Films 515 (2007) 4356.   DOI   ScienceOn
3 Z. Liu, X. Wang, J. Wang, G. Hu, L. Guo, J. Li, J. Li and Y. Zeng, "Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD", J. Crystal Growth 298 (2007) 281.   DOI   ScienceOn
4 V.N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev, E.V. Konenkova, G.N. Mosina, S.D. Raevskii, S.N. Rodin, Sh. Sharofidinov, M.P. Shcheglov, H.S. Park and M. Koike, "GaN films grown by vapor-phase epitaxy in a hydride chloride system on Si(111) substrates with AlN buffer sublayers", Techn. Phys. 31(11) (2005) 915.   DOI
5 J.X. Zhang, Y. Qu, Y.Z. Chen, A. Uddin, P. Chen and S.J. Chua, "Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition", Thin Solid Films 515 (2007) 4397.   DOI   ScienceOn
6 Y. Dikme, G. Gerstenbrandt, A. Alam, H. Kalisch, A. Szymakowski, M. Fieger, R.H. Jansen and M. Heuken, "Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)", J. Crystal Growth 248 (2003) 578.   DOI   ScienceOn
7 C.K. Shu, J. Ou, H.C. Lin, W.K. Chen and M.C. Lee, "Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition", Appl. Phys. Lett. 73 (1998) 641.   DOI   ScienceOn
8 A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki, "The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer", J. Crystal Growth 128 (1993) 391.   DOI   ScienceOn
9 J.H. Choi, Z. Andrei, S.I. Kim, C.W. Baik, M.H. Yang, S.S. Park, H. Suh, U.J. Kim, S.H. Bin, J.S. Lee, M. Kim, J.M. Kim and K. Kim, "Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates", Nature Photonics 5 (2011) 763.   DOI
10 H. Xu, X. Hu, X. Xu, Y. Shen, S. Qu, C. Wang and S. Li, "Gallium vacancies related yellow luminescence in N-face GaN epitaxial film", Applied Surface Science 258 (2012) 6451.   DOI   ScienceOn
11 K.Y. Zang, S.J. Chua, L.S. Wang, C.V. Thompson, "Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films", Phys. Status Solidi C7 (2003) 2067.
12 X. Weng, S. Raghavan, J.D. Acord, A. Jain, E.C. Dickey and J.M. Redwing, "Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates", J. Crystal Growth 300 (2007) 822.