• Title/Summary/Keyword: InAsP

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Turnover of Phosphate Compounds in Chlorella cells in a P-free medium (인산결핍배지에 있어서의 Chlorella 세포내의 인산화합물의 전환)

  • 이영녹
    • Journal of Plant Biology
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    • v.9 no.1_2
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    • pp.1-6
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    • 1966
  • Using the Chlorella cells which had been uniformly labeled with $^{32}P$, the distribution of phosphorus in various fractions of cell material was investigated. Uniformly $^{32}P$-labeled Chlorella cells were further grown in a P-free medium, and some protions of the cells were taken out at intervals during the culture, and subjected to analyze the contents of $^{32}P$ in various fractins of the cell constituents. 2. Analysis of the $^{32}P$-labeled Chlorella cells showed that the highest in P-content was the fraction of RNA followed by those of lipid, RNA-polyphosphate complex, acid-insoluble polyphosphate, acid-soluble polyphosphate, DNA and protein. 3. During the culture of $^{32}P$-labeled Chlorella cells in a P-free medium, amounts of phosphate in DNA, protein and lipid fractions increased, while the P-contents in the fraction of RNA-polyphosphate complex decreased as well as those of acid-insoluble polyphosphate and acid-soluble polyphosphate fractions. 4. It was inferred that phosphorus used in the syntheses of DNA and protein was taken from polyphosphates of the cells, and RNA-polyphosphate complex would play an important role as a phosphate pool.

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Ordering in InGaAsP Epitaxial Layers Grown by low Pressure metalorganic Chemical Vapor Deposition (저압 MOCVD 방법으로 성장된 InGaAsP 에피층에서의 ordering 현상)

  • 김대연;문영부;이태완;윤의준;이정용;정현식
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.187-194
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    • 1998
  • InGaAsP epitaxial layers lattice matched to InP were grown at 600 and $620^{\circ}C$ by low pressure metalorganic chemical vapor deposition. Solid phase composition of group III was controlled by the diffusion flux gas phase to the reachion surface. For the case of group V, the difference of As and P vapor pressure and pyrolysis efficiency of $PH_3$and $AsH_3$ mainly determined their in corporation into solid. An abnormal behavior of peak energy shift was observed below 75K in temperature variant photoluminescence study. This abnormal behavior was explained by the difference in order of ordering which makes spatial variation of energy gap in InGaAsP layer and this explanation was supported by the analyses of transmission electron microscopy and transmission spectroscopy.

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Fabrication of planar type GaInAs PIN photodiode and its characteristics (평면형 GaInAs/InP PIN Photodiode 제작 및 특성)

  • 박찬용
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.06a
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    • pp.135-138
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    • 1991
  • A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

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A study on the InGaAsP/InP MQW-LD fabrication by the liquid phase epitaxy (액상결정성장에 의한 InGaAsP/InP MQW-ND 제작에 관한 연구)

  • 조호성;홍창희;오종환;예병덕;이중기
    • Korean Journal of Optics and Photonics
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    • v.3 no.4
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    • pp.252-257
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    • 1992
  • In this study, InGaAsP/InP MQW-DH wafer was grown by a vertical type LPE system and 10$\mu$m stripe MQW-LD was fabricated with the wafer. The threshold current was about 200 mA and when the cavity length of the LD was 470$\mu$m the central wavelenth of gain spectra was 1.32$\mu$m the lasing wavelength was 1.302$\mu$m which corresponded to the gain center of the quantum well thickness of 300 $\AA$.

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Analytical Breakdown Voltages of $p^{+}n$ Junction in Power Semiconductor Devices (전력 반도체 $p^{+}n$ 접합의 해석적 항복전압)

  • Chung, Yong Sung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.10 s.340
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    • pp.9-18
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    • 2005
  • Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

Effects of Addition Level and Chemical Type of Propionate Precursors in Dicarboxylic Acid Pathway on Fermentation Characteristics and Methane Production by Rumen Microbes In vitro

  • Li, X.Z.;Yan, C.G.;Choi, S.H.;Long, R.J.;Jin, G.L.;Song, Man K.
    • Asian-Australasian Journal of Animal Sciences
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    • v.22 no.1
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    • pp.82-89
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    • 2009
  • Two in vitro experiments were conducted to examine the effects of propionate precursors in the dicarboxylic acid pathway on ruminal fermentatation characteristics, $CH_4$ production and degradation of feed by rumen microbes. Fumarate or malate as sodium salts (Exp. 1) or acid type (Exp. 2) were added to the culture solution (150 ml, 50% strained rumen fluid and 50% artificial saliva) to achieve final concentrations of 0, 8, 16 and 24 mM, and incubated anaerobically for 0, 1, 3, 6, 9 and 12 h at $39^{\circ}C$. For both experiments, two grams of feed consisting of 70% concentrate and 30% ground alfalfa (DM basis) were prepared in a nylon bag, and were placed in a bottle containing the culture solution. Addition of fumarate or malate in both sodium salt and acid form increased (p<0.0001) pH of culture solution at 3, 6, 9 and 12 h incubations. The pH (p<0.0001) and total volatile fatty acids (VFA, p<0.05) were enhanced by these precursors as sodium salt at 3, 6 and 9 h incubations, and pH (p<0.001) and total VFA (p<0.01) from fumarate or malate in acid form were enhanced at a late stage of fermentation (9 h and 12 h) as the addition level increased. pH was higher (p<0.001) for fumarate than for malate as sodium salt at 3 h and 6 h incubations. Propionate ($C_3$) proportion was increased (p<0.0001) but those of $C_2$ (p<0.05) and $C_4$ (p<0.01 - p<0.001) were reduced by the addition of sodium salt precursors from 3 h to 12 incubation times while both precursors in acid form enhanced (p<0.011 - p<0.0001) proportion of $C_3$ from 6h but reduced (p<0.018 - p<0.0005) $C_4$ proportion at incubation times of 1, 3, 9 and 12 h. Proportion of $C_3$ was increased (p<0.05 - p<0.0001) at all incubation times by both precursors as sodium salt while that of $C_3$ was increased (p<0.001) from 6h but $C_4$ proportion was decreased by both precursors in acid form as the addition level increased. Proportion of $C_3$ was higher (p<0.01 - p<0.001) for fumarate than malate as sodium salt from 6 h incubation but was higher for malate than fumarate in acid form at 9 h (p<0.05) and 12 h (p<0.01) incubation times. Increased levels (16 and 24 mM) of fumarate or malate as sodium salt (p<0.017) and both precursors in acid form (p<0.028) increased the total gas production, but no differences were found between precursors in both chemical types. Propionate precursors in both chemical types clearly reduced (p<0.0001 - p<0.0002) $CH_4$ production, and the reduction (p<0.001 - p<0.0001) was dose dependent as the addition level of precursors increased. The $CH_4$ generated was smaller (p<0.01 - p<0.0001) for fumarate than for malate in both chemical types. Addition of fumarate or malate as sodium type reduced (p<0.004) dry matter degradation while both precursors in both chemical types slightly increased neutral detergent fiber degradability of feed in the nylon bag.

Quantum well intermixing of compressively strained InGaAs/InGaAsP multiple quantum well structure by using impurity-free vacancy diffusion technique (Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중양자우물 구조의 무질서화)

  • 김현수;박정우;오대곤;최인훈
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.150-154
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    • 2000
  • We investigated the quantum well intermixing (QWI) of a compressively strained InGaAs/InGaAsP multiple quantum well (MQW) by using impurity free vacancy diffusion technique. The samples with InGaAs/$SiO_2$ capping layer showed a higher degree of intermixing compared to that of InP/$SiO_2$ capping layer after rapid thermal annealing (RTA). Band-gap shift difference as large as 123 meV (195 nm) was observed between samples capped with InGaAs/$SiO_2$ and with InP/$SiO_2$ layer at RTA temperature of $700^{\circ}C$. Using the InGaAs/$SiO_2$ cap layer, the band-gap wavelength of MQW was changed by the intermixing from 1.55 $\mu\textrm{m}$ band to 1.3 $\mu\textrm{m}$ band with a wavelength shift of a 237 nm. The transform from MQW structure to homogenous alloy was observed above the RTA temperature of $700^{\circ}C$.

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Fabrication and application performance of the GaInAs/InP PIN photodiode for the light-wave communication (고속 장파장 광통신을 위한 GaInAs/InP PIN 광검출기의 제작 및 응용특성)

  • 남은수
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.196-200
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    • 1989
  • The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.

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Nucleophilic Displacement at Sulfur Center (ⅩⅢ). Solvolysis of para-Substituted Benzenesulfonyl Chlorides in MeOH-MeCN Mixtures (황의 친핵성 치환반응 (제13보). 메탄올-아세토니트닐계에서의 파라치환 염화벤젠술포닐의 가용매 분해반응)

  • Ikchoon Lee;In Sun Koo
    • Journal of the Korean Chemical Society
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    • v.25 no.1
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    • pp.7-12
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    • 1981
  • Solvolysis of $p-CH_3, p-H, p-Cl and p-NO_2$-benzenesulfonyl chlorides have heen studied in MeOH-MeCN mixtures. A nonlinear Hammett plot with a ratio order of p-NO_2 > p-CH_3 > p-H > p-Cl was obtained; the reaction was thought to proceed by an S_N1-S_N2 borderline mechanism. In all cases the reactivity was a maximum at 90∼95%(v) methanol, whereas methanol monomer selectivity defined as fi = \frac{k1}{ki}i (k1; observed pseudo-first order rate constant: ki; hypothetical rate constant for MeOH solution having the same polymer structure as in the pure MeOH) was a maximum at 80% methanol with a decreasing order of fi as p-NO_2 > p-Cl > p-H > p-CH_3.$ This was interpreted as the decrease in tightness of transition state; the larger the fi, the tighter is the MeOH attached to the substrate, and hence the more susceptible the substrate becomes to the approaching monomer methanol.

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Determining Personal Credit Rating through Voice Analysis: Case of P2P loan borrowers

  • Lee, Sangmin
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.15 no.10
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    • pp.3627-3641
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    • 2021
  • Fintech, which stands for financial technology, is growing fast globally since the economic crisis hit the United States in 2008. Fintech companies are striving to secure a competitive advantage over existing financial services by providing efficient financial services utilizing the latest technologies. Fintech companies can be classified into several areas according to their business solutions. Among the Fintech sector, peer-to-peer (P2P) lending companies are leading the domestic Fintech industry. P2P lending is a method of lending funds directly to individuals or businesses without an official financial institution participating as an intermediary in the transaction. The rapid growth of P2P lending companies has now reached a level that threatens secondary financial markets. However, as the growth rate increases, so does the potential risk factor. In addition to government laws to protect and regulate P2P lending, further measures to reduce the risk of P2P lending accidents have yet to keep up with the pace of market growth. Since most P2P lenders do not implement their own credit rating system, they rely on personal credit scores provided by credit rating agencies such as the NICE credit information service in Korea. However, it is hard for P2P lending companies to figure out the intentional loan default of the borrower since most borrowers' credit scores are not excellent. This study analyzed the voices of telephone conversation between the loan consultant and the borrower in order to verify if it is applicable to determine the personal credit score. Experimental results show that the change in pitch frequency and change in voice pitch frequency can be reliably identified, and this difference can be used to predict the loan defaults or use it to determine the underlying default risk. It has also been shown that parameters extracted from sample voice data can be used as a determinant for classifying the level of personal credit ratings.