• Applied Chemistry for Engineering
• /
• v.22 no.3
• /
• pp.328-331
• /
• 2011

ZnSe quantum dots (QDs) were prepared by employing water-containing Dioctyl sodium sulfosuccinate (AOT) reversed micelles (microemulsions) and the silica-encapsulated ZnSe QDs were obtained by a direct injection of tetraethyl orthosilicate (TEOS) into the microemulsion system. When the QDs were coated by silica, well-defined spherical shapes were formed and the average size of the QDs was near 7 nm. In addition, the photoluminescence (PL) efficiency of the QDs was reduced from 8.0 to 1.1% as they were encapsulated by silica. However, the solid layers of the silica-encapsulated ZnSe QDs on gold surfaces showed the excellent photostability. In particular, they are cadmium free and thus, less toxic. Moreover, the present method does not require a hot reaction temperature or extremely toxic H2Se gas as a Se precursor. Accordingly, the method can be a safer and more economical process for producing silica-encapsulated ZnSe QDs, which may be a potential media for biosensors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.246.1-246.1
• /
• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• Advances in nano research
• /
• v.2 no.3
• /
• pp.157-172
• /
• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• 한국전자현미경학회:학술대회논문집
• /
• 2005.11a
• /
• pp.187-188
• /
• 2005

• Advances in nano research
• /
• v.1 no.4
• /
• pp.203-210
• /
• 2013

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

• Applied Science and Convergence Technology
• /
• v.26 no.4
• /
• pp.86-90
• /
• 2017

We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of $E_{a1}$ and $E_{a2}$ for the InAs QDs were obtained $48{\pm}3meV$ and $229{\pm}23meV$, respectively. It was considered that the values of $E_{a1}$ and $E_{a2}$ are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.325-325
• /
• 2005

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.294-300
• /
• 2006

We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal-organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self-assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 nm, which was red-shifted by 18 nm from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.332-332
• /
• 2012

분자선 에피탁시(molecular beam epitaxy)를 이용하여 GaAs 기판에 성장한 InAs 양자점(QDs: quantum dots)은 성장 온도, 압력, As/In의 공급비 등의 성장 조건에 따라 다른 변수(parameter)를 갖는다. 따라서 성장변수에 따라 양자점의 모양과 크기, 밀도가 달라져 균일한 양자점 형성에 어려움이 있어 많은 연구가 진행되고 있다. 예를 들면 In-interruption 법으로 성장한 양자점의 특성이 S-K mode (Stranski-Krastanov mode)로 성장한 양자점에 비해 광학적 특성이 향상되었다. 본 연구에서는 In pre-deposition (IPD) 법으로 성장한 InAs/GaAs 양자점의 광학적 특성을 PL(photoluminescence)와 TRPL (time-resolved PL)을 이용하여 분석하였다. InAs QDs 시료들은 In과 As 공급시간을 각각 1초와 19초 (QD1), 2초와 18초 (QD2), 3초와 17초 (QD3)로 조절하여 성장하였으며, In이 공급되는 시간 동안 As shutter를 차단하여 As 공급을 중단하였다. In과 As의 차단 없이 S-K mode로 성장한 시료를 기준시료로 사용하였다 (QD0). AFM (atomic force microscope) 측정결과, In 공급시간이 1초에서 2초로 증가할 때, 양자점의 밀도와 종횡비(aspect ratio)가 증가하였고, 양자점의 균일도가 증가하였다. 그러나 QD3 시료는 QD1 시료에 비해 밀도와 종횡비, 균일도가 감소하였다. 10 K에서 PL 피크는 In 공급 시간이 증가할 때, 970 nm에서 1020 nm로 적색편이 하였고 반치폭 (FWHM: full width at half maximum)은 75 meV에서 85 meV로 증가하였다. QD2 시료의 PL 피크 에너지가 가장 낮았고, 가장 강한 PL 세기를 보였다. IPD 시간이 증가함에 따라 PL 피크에서 측정한 PL 소멸은 점차 빨라졌다. IPD 기법으로 성장한 양자점의 빠른 PL 소멸은 양자점 밀도와 종횡비 향상에 의한 파동함수 중첩의 증가와 구속 에너지 증가에 의한 것으로 설명된다.

• Proceedings of the Polymer Society of Korea Conference
• /
• 2006.10a
• /
• pp.330-330
• /
• 2006

The elaboration of fluorescent submicronic polymer particles exhibiting narrow particle size distribution as well as good photostability is of particular interest in various biomedical applications. In the frame of this work, labeled polystyrene latexes have been synthesized by miniemulsion polymerization using luminescent semiconductor nanoparticles (quantum dots, QD). The influence of incorporation of QDs on the polymerization kinetics as well as on the optical properties of the obtained latexes will be discussed.