• The Journal of the Convergence on Culture Technology
• /
• v.6 no.4
• /
• pp.819-824
• /
• 2020

In this paper, we propose a new multiplexer using quantum dot cellular automata (QCA), a next-generation digital circuit design technology. A multiplexer among digital circuits is a circuit that selects one of the input signals and transfers the selected input to one line. Since it is used in many circuits such as D-flip-flops, resistors, and RAM cells, research has been conducted in various ways to date. However, the previously proposed planar structure multiplexer does not consider connectivity, and therefore, when designing a large circuit, it uses an area inefficiently. There was also a multiplexer proposed as a multi-layer structure, but it does not improve the area due to not considering the interaction between cells. Therefore, in this paper, we propose a new multiplexer that improves 38% area reduction, 17% cost reduction, and connectivity using a cell-to-cell interaction and multi-layer structure.

• The Journal of the Korea Contents Association
• /
• v.20 no.8
• /
• pp.628-636
• /
• 2020

The purpose of this study was to investigate how self-help group conducted by 25 dementia safety centers in Seoul correlated the stress and life satisfaction of primary care-givers of dementia patients. At 25 dementia safety centers, self-help groups were identified, and a survey was conducted for the care-givers of dementia patients participating in the self-help groups. SPSS 21.0 program was used for the collected data, and reliability was analyzed for stress level and satisfaction after the program. Multivariance analysis and one-way analysis were performed for the types of self-help groups, the frequency of attendance, and the number of meetings. The result were : first, the total stress felt by participants was close to 4 out of 5, and there was no significant difference in meeting type and attendance frequency, and only in the relationship between stress and the number of self-help groups(p<.05). Second, the satisfaction after self-help meetings was close to 4 out of 5, the meeting type and attendance frequency no significant difference, and only the number of self-help meetings showed a significant difference(p<.05). Third, there was a significant negative correlation in the relationship between stress and program satisfaction. As can be seen from the results, it can be seen that self-help groups have an effect on the stress of primary care-givers and the satisfaction level after meeting.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.527-531
• /
• 2005

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

• Korean Journal of Materials Research
• /
• v.23 no.8
• /
• pp.430-434
• /
• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.183-187
• /
• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.10
• /
• pp.864-868
• /
• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.28 no.3
• /
• pp.551-561
• /
• 2018

As the computational technology using quantum computing has been developed, several threats on cryptographic systems are recently increasing. Therefore, many researches on post-quantum cryptosystems which can withstand the analysis attacks using quantum computers are actively underway. Nevertheless, the lattice-based NTRU system, one of the post-quantum cryptosystems, is pointed out that it may be vulnerable to the fault injection attack which uses the weakness of implementation of NTRU. In this paper, we investigate the fault injection attacks and their previous countermeasures on the NTRU signature system and propose a secure and efficient countermeasure to defeat it. As a simulation result, the proposed countermeasure has high fault detection ratio and low implementation costs.

• Korean Journal of Materials Research
• /
• v.13 no.11
• /
• pp.708-710
• /
• 2003

One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the ［011］oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
• /
• v.7 no.3
• /
• pp.291-300
• /
• 2017

Quantum-dot cellular automata(QCA) is a computing model designed to be similar to cellular automata, and an alternative technology for next generation using high performance and low power consumption. QCA is undergoing various studies with recent experimental results, and it is one of the paradigms of transistors that can solve device density and interconnection problems as nano-unit materials. An XOR gate is a gate that operates so that the result is true when either one of the logic is true. The proposed XOR gate consists of five layers. The first layer consists of OR gates, the third and fifth layers consist of AND gates, and the second and fourth layers are designed as passages in the middle. The half adder consists of an XOR gate and an AND gate. The proposed half adder is designed by adding two cells to the proposed XOR gate. The proposed half adder consists of fewer cells, total area, and clock than the conventional half adder.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
• /
• v.7 no.2
• /
• pp.227-236
• /
• 2017

Quantum-dot cellular automata(QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Various circuits on QCA have been researched until these days, a latch required for counter and state control has been proposed as a component of sequential logic circuits. A latch uses a feedback loop to maintain previous state. In QCA, a latch uses a square structure using 4 clocks for feedback loop. Previous latches have been proposed using many cells and clocks in coplanar. In this paper, in order to eliminate these defects, we propose a SR and D latch using multilayer structure on QCA. Proposed three dimensional loop structure is based on multilayer and consists of 3 layers. Each layer has 2 clock differences between layers in order to reduce interference. The proposed latches are analyzed and compared to previous designs.