References
- J. Y. Marzin, J. M. Gerard, A. Izrael, D. Barrier and G. Bastard, Phys. Rev. Lett., 73, 716 (1994) https://doi.org/10.1103/PhysRevLett.73.716
- R. Notzel, J. Temmyo, H. Kamada and T. Funuta, Appl. Phys. Lett., 65, 457 (1994) https://doi.org/10.1063/1.113021
- S. K. Jung, S. W. Hwang, B. H. Choi, S. I. Kim, J. H. Park, Y. Kim, E. K. Kim and S. K. Min, Appl. Phys. Lett., 71, 714 (1999) https://doi.org/10.1063/1.122996
- R. Tsui, R. Zhang, K. Shiralagi and H. Goronkin, Appl. Phys. Lett., 71, 3254 (1997) https://doi.org/10.1063/1.120306
- R. Zhang, R. Tsui, K. Shiralagi, D. Convey and H. Goronkin, Appl. Phys. Lett., 73, 505 (1998) https://doi.org/10.1063/1.121915
- D. S. L. Mui, D. Leonard, L. A. Coldren and P. M. Petroff, Appl. Phys. Lett., 66, 1620 (1995) https://doi.org/10.1063/1.113871
- J. Tatebayashi, M. Nishioka, T. Someya and Y. Arakawa, Appl. Phys. Lett., 77 (2000) 3382 https://doi.org/10.1063/1.1327613
- H. J. Kim, Y. J. Park, Y. M. Park, E. K. Kim and T. W. Kim, Appl. Phys. Lett., 78, 3253 (2001) https://doi.org/10.1063/1.1362337
- A. Konkar, A. Madhukar, and P. Chen, Appl. Phys. Lett., 72, 220 (1998) https://doi.org/10.1063/1.120691
- S. Jeppesen, M. S. Miller, D. Hessman, B. Kowalski, I. Maximov and L. Samuelson, Appl. Phys. Lett., 68, 2228 (1996) https://doi.org/10.1063/1.115867
- T. Ishikawa, S. Kohmoto and K. Asakawa, Appl. Phys. Lett., 73, 1712 (1998) https://doi.org/10.1063/1.122254
- M. Borgstrom, K. Johansson, L. Samuelson and W. Seifert, Appl. Phys. Lett., 78 (2001) 1367 https://doi.org/10.1063/1.1351528
- S. Kohmoto, J. Nakamura, T. Ishikawa and K. Asakawa, Appl. Phys. Lett., 75, 3488 (1999) https://doi.org/10.1063/1.125364
- C. S. Son, T. G. Kim, X. L.Wang and M. Ogura, J. Crystal Growth, 221, 201 (2000) https://doi.org/10.1016/S0022-0248(00)00686-2