• Title/Summary/Keyword: In situ transmission electron microscopy

Search Result 85, Processing Time 0.031 seconds

Deformation Behavior in Compatible Polymer Blends (고분자블렌드에서의 변형거동)

  • 전병철
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 1992.05a
    • /
    • pp.121-121
    • /
    • 1992
  • Deformation behavior of compatible polymer blends was studied using scanning electron, optical, and transmission electron microscopies. Four different compatible systems were employed and charaterized in this investigation : polystyrene(PS) and polyphenylene oxide(PPO), polystyrene(PS) and polyvinlmethylether(PVME), polystyrene(PS) and poly $\alpha$-methylstyrene(P$\alpha$MS). Individual craze and shear deformation zone microstructures were examined by transmission microscopy (TEM). For TEM observations, specimens deformed in-situ on a TEM grid were utilized. Quantiative analysis of these crazes and shear deformation zones was obtained from the nicrodensitometry of the TEM negatives in the manner developed by Lauterwasser and Kramer. Microdensitometry resulys showed that the fibril extension ratio decreased as the PPO content increased in the PS/PPO blends, and finally, for 100% PPO, only shear deformation zones were observed. For the PS/PVME blends, the ribril extension ratio also decreased as the VME content increased. For the PS/P$\alpha$MS blends, the fibril extension ratio increased as the P$\alpha$MS content increased, For the PPO/P$\alpha$MS blends, the fibril extension ratio increased as the P$\alpha$MS content increased.

  • PDF

TEM Study on the Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots

  • Kim, Hyung-Seok;Suh, Ju-Hyung;Park, Chan-Gyung;Lee, Sang-Jun;Noh, Sam-Gyu;Song, Jin-Dong;Park, Yong-Ju;Lee, Jung-Il
    • Applied Microscopy
    • /
    • v.36 no.spc1
    • /
    • pp.35-40
    • /
    • 2006
  • Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

Manufacturing of Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition Reactor and Si Wafer Surface Cleaning by Hydrogen Plasma (초고진공 전자 사이클로트론 공명 화학 기상증착장치의 제작과 수소 플라즈마를 이용한 실리콘 기판 표면 세정화)

  • 황석희;태흥식;황기웅
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.31A no.4
    • /
    • pp.63-69
    • /
    • 1994
  • The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

  • PDF

Investigation of Electron Thermally Induced Phase Transition in MAPbI3 Perovskite Solar Cells Using In-Situ XRD and TEM (실시간 XRD와 TEM을 이용한 MAPbI3의 온도 변화에 따른 구조 분석)

  • Choi, Jin-Seok;Eom, Ji-Ho;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.32 no.1
    • /
    • pp.64-69
    • /
    • 2019
  • Methylammonium lead triiodide ($MAPbI_3$)-based perovskite solar cells potentially have potential advantages such as high efficiency and low-cost manufacturing procedures. However, $MAPbI_3$ is structurally unstable and has low phase-change temperatures ($30^{\circ}C$ and $130^{\circ}C$); it is necessary to solve these problems. We investigated the crystal structure and phase separation using real-time temperature-change X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. $MAPbI_3$ has a tetragonal structure, and at about $35^{\circ}C$ the c-axis contracts, transforming $MAPbI_3$ into the related cubic crystal structure. In addition, at $130^{\circ}C$, phase separation occurs in which $CH_3NH_2$ and HI at the center of the unit cell of the perovskite structure are extracted by gas, leavingand only $PbI_2$ of the three-component structure, is produced as the final solid product.

Improved Electrical Properties by In Situ Nitrogen Incorporation during Atomic Layer Deposition of HfO2 on Ge Substrate (Ge 기판 위에 HfO2 게이트 산화물의 원자층 증착 중 In Situ 질소 혼입에 의한 전기적 특성 변화)

  • Kim, Woo-Hee;Kim, Bum-Soo;Kim, Hyung-Jun
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.1
    • /
    • pp.14-21
    • /
    • 2010
  • Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

Silicate dispersion and rheological properties of high impact polystyrene/organoclay nanocomposites via in situ polymerization

  • Kim, Byung-Chul;Lee, Seong-Jae
    • Korea-Australia Rheology Journal
    • /
    • v.20 no.4
    • /
    • pp.227-233
    • /
    • 2008
  • High impact polystyrene (HIPS)/organoclay nanocomposites via in situ polymerization were synthesized and their rheological properties were investigated. For the study, two types of organoclays were used: a commercially available organoclay, Cloisite 10A (C10A), and a laboratory-prepared organoclay having a reactant group, vinylclay (ODVC). The X-ray diffraction and transmission electron microscopy experiments revealed that the HIPS/ODVC nanocomposite achieved an exfoliated structure, whereas the HIPS/C10A nanocomposite achieved an intercalated structure. In the small-amplitude oscillatory shear experiments, both storage modulus and complex viscosity increased with increasing organoclay. A pronounced effect of the organoclay content was observed, resulting in larger storage modulus and stronger yield behavior in the low frequency region when compared to neat HIPS. The crossover frequencies associated with the inverse of a longest relaxation time decreased as the organoclay content increased. Over a certain value of ODVC content, a change of pattern in rheological properties could be found, indicating a solid-like response with storage modulus greater than loss modulus at all frequencies.

Morphology and Properties of Polyacrylonitrile/Na-MMT Nanocomposites Prepared via in-situ Polymerization with Macroazoinitiator

  • Jeong Han-Mo;Choi Mi-Yeon;Ahn Young-Tae
    • Macromolecular Research
    • /
    • v.14 no.3
    • /
    • pp.312-317
    • /
    • 2006
  • In the preparation of a polyacrylonitrile (PAN)/sodium montmorillonite (Na-MMT) nanocomposite via an in-situ polymerization method, macroazoinitiator (MAI) was intercalated in the gallery of Na-MMT to enhance the delamination of silicate layers by intergallery polymerization. The exfoliated fine dispersion observed by X-ray diffraction pattern and transmission electron microscopy, the enhanced tensile storage modulus and the thermal decomposition temperature showed that the intercalated MAI was effective in inducing intergallery polymerization and that a poly(ethylene glycol) block linked to a PAN block improved the dispersion of hydrophilic Na-MMT in the polymer matrix.

Development of certified reference material (CRM)s for surface analysis II : multilayer thin films for sputter depth profiling (표면분석용 인증표준물질의 개발 II : 깊이분포도용 다층 박막 표준물질의 개발)

  • 김경중;문대원
    • Journal of the Korean Vacuum Society
    • /
    • v.8 no.3B
    • /
    • pp.283-289
    • /
    • 1999
  • Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

  • PDF

Microstructural ananalysis of AlN thin films on Si substrate grown by plasma assisted molecular beam epitaxy (RAMBE를 사용하여 Si 기판 위에 성장된 AIN 박막의 결정성 분석)

  • 홍성의;한기평;백문철;조경익;윤순길
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.1
    • /
    • pp.22-26
    • /
    • 2001
  • Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

  • PDF

Self-Organized Synthesis and Mechanism of SnO2@Carbon Tube-Core Nanowire

  • Luo, Minting;Ma, Yong-Jun;Pei, Chonghua;Xing, Yujing;Wen, Lixia;Zhang, Li
    • Bulletin of the Korean Chemical Society
    • /
    • v.33 no.8
    • /
    • pp.2535-2538
    • /
    • 2012
  • $SnO_2@carbon$ tube-core nanowire was synthesized via a facile self-organized method, which was in situ by one step via Chemical Vapor Deposition. The resulting composite was characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscope. The diameter of the single nanowire is between 5 nm and 60 nm, while the length would be several tens to hundreds of micrometers. Then X-ray diffraction pattern shows that the composition is amorphous carbon and tin dioxide. Transmission electron microscope images indicate that the nanowire consists of two parts, the outer carbon tube and the inner tin dioxide core. Meanwhile, the possible growth mechanism of $SnO_2@carbon$ tube-core nanowire is also discussed.