• 미생물학회지
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• 제25권2호
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• pp.129-136
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• 1987

영남작물시험장에서 질소비료 공급없이 재배합 40종의 수도품종으로부터 출수기전의 수도근권의 질소고정력을 in situacetylene 환원력 측정방법으로 시험한 결과 Azospirillum 균의 무질소 malate 배지에서 얻은 균주와 상관관계를 보였다. 이 중 질소고정력이 높은 6종의 Azospirillum을 분리 동정한 결고 5종은 A. lipoferum, 1종은 A. brasilense임을 확인한 후 이들 6종의 Azospirillum들의 당이용성, biotin 요구성, 항생제저항성, auxin 생산성, plasmid profile 및 균체단백질 pattern을 비교 분석하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제15권4호
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• pp.537-542
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• 2002

A study was conducted to evaluate the nutritive potential value of different aquatic plants: duckweed (Lemna trisulaca), duckweed (Lemna perpusila), azolla (Azolla pinnata) and water-hyacinth (Eichhornia crassipes) from Bangladesh. A wide variability in protein, mineral composition, gas production, microbial protein synthesis, rumen degradable nitrogen and in situ dry matter and crude protein degradability were recorded among species. Crude protein content ranged from 139 to 330 g/kg dry matter (DM). All species were relatively high in Ca, P, Na, content and very rich in K, Fe, Mg, Mn, Cu and Zn concentration. The rate of gas production was highest in azolla and lowest in water-hyacinth. A similar trend was observed with in situ DM degradability. Crude protein degradability was highest in duckweed. Microbial protein formation at 24 h incubation ranged from 38.6-47.2 mg and in vitro rumen degradable nitrogen between 31.5 and 48.4%. Based on the present findings it is concluded that aquatic species have potential as supplementary diet to livestock.

• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• Advances in nano research
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• 제9권1호
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• pp.25-32
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• 2020

In this work, we report the use of caffeine as an alternative source of nitrogen to successfully dope graphene (quaternary 400.6 eV and pyridinic at 398 eV according XPS), as well as the growth of silver nanowires (in-situ) in the surface of nitrogen doped graphene (NG) sheets. We used the improved graphene oxide method (IGO), chemical reduction of graphene oxide (GOx), and impregnation with caffeine as source of nitrogen for doping and subsequently, silver nanowires (NW) grow in the surface by the reduction of silver salts in the presence of NG, achieving a numerous of growth of NW in the graphene sheets. As supporting experimental evidence, the samples were analyzed using conventional characterization techniques: SEM-EDX, XRD, FT-IR, micro RAMAN, TEM, and XPS.

• 환경생물
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• 제36권4호
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• pp.558-566
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• 2018

The objective of the study was to determine nutrition regime and limitation in the Boryeng Reservoir where there's a water tunnel between Geum River and the reservoir. Evaluation was conducted through in situ algal bioassay experiments (in situ ABEs) using the cubitainer setting in the reservoirs. For in situ ABEs, we compared and analyzed variations in chlorophyll-a (CHL-a) and phosphorus concentrations in Boryeong Reservoir before and after the water tunnel construction. We then analyzed the nutrient effects on the reservoir. Analysis for nitrogen and phosphorus was done in the three locations of the reservoir and two locations of the ABEs. The in situ ABEs results showed that phosphorous and Nitrogen, the primary limiting nutrient regulating the algal biomass was not limited in the system. The treatments of phosphorus or simultaneous treatments of N+P showed greater algal growth than in the control of nitrate-treatments, indicating a phosphorus deficiency on the phytoplankton growth in the system. The water from the Geum River had 5 times higher total phosphorus (TP) than the water in the reservoir. Efficient management is required as pumping of the river water from Geum River may accelerate the eutrophication of the reservoir.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• 한국물환경학회지
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• 제24권3호
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• pp.383-390
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• 2008

Recently, the interests on economical nitrogen removal from wastewater are growing. As a method of the novel nitrogen removal technology, nitrogen removal via nitrite pathway by selective inhibition of free ammonia and free nitrous acid on nitrite oxidizing bacteria have been intensively studied. The inhibition effects of free ammonia and free nitrous acid are low when domestic wastewater is used, however, because of its relatively lower nitrogen concentration than the wastewater from industry and landfill, etc. In this study, a sequencing batch reactor (SBR) is proposed for nitrogen removal to investigate the effect of the low nitrogen concentration on nitrite accumulation. Nitrification efficiency reached almost 100% during the aerobic cycle and the maximum specific nitrification rate ($V_{max,nit}$) reached $17.8mg\;NH_4{^+}-N/g\;MLVSS{\bullet}h$. During the anoxic cycle, average denitrification efficiency reached 87% and the maximum specific denitrification rate ($V_{max,den}$) reached $9.8mg\;NO_3{^-}-N/g\;MLVSS{\bullet}h$. From the analysis the main reason of nitrite accumulation in the SBR was free nitrous acid rather than free ammonia. Nitrite accumulation increased with the decrease of organic content in the wastewater and the mechanism is not well understood yet. From the result of fluorescent in situ hybridization, the distribution of nitrite oxidizing bacteria was in equilibrium with ammonium oxidizing bacteria when nitrite accumulation did not occur.

• 한국표면공학회지
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• 제34권3호
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

• 한국동물학회:학술대회논문집
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• 한국동물학회 1998년도 한국생물과학협회 학술발표대회
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• pp.182.1-182
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• 1998

No Abstract, See Full Text

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.395-401
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• 2013

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reaches to chamber O-ring wear out, MFC leaks, and/or leak at gas delivery line, and experiments are performed to funnel down the potential of the cause. While monitoring the plasma chemistry of the process chamber using OES, the emission trace for nitrogen species is observed at the chlorine gas supply. No trace of nitrogen species is found in other than chlorine gas supply, and we found that the amount of chlorine gas is slightly fluctuating. We successfully found the root cause of the reported misprocessing which may jeopardize the quality of thin film processing. Based on a quantitative analysis of the amount of nitrogen observed in the chamber, we conclude that the source of the leak is the fitting of the chlorine mass flow controller with the amount of around 2-5 sccm.