Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.07d
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- Pages.1249-1251
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- 1998
The Characteristics of $GaAs_{0.35}P_{0.65}$ Epitaxial Layer According to in-situ doping of $NH_3$ gas
In-situ $NH_3$ doping에 따른 $GaAs_{0.35}P_{0.65}$ 에피막의 특성
- Lee, Eun-Cheol (Department of Electrical Engineering, Kunsan National University) ;
- Lee, Cheol-Jin (Department of Electrical Engineering, Kunsan National University)
- Published : 1998.07.20
Abstract
We have studied the properties of
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