• Progress in Superconductivity and Cryogenics
• /
• v.23 no.3
• /
• pp.41-44
• /
• 2021

We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIn₅ thin films on MgF₂ substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn₃ impurity phase and misoriented CeCoIn₅, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (00l)-oriented CeCoIn₅ as well as the undesired phases such as CeIn₃, misoriented CeCoIn₅ along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn₅ thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.526-531
• /
• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of the Korean Ceramic Society
• /
• v.26 no.4
• /
• pp.479-486
• /
• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• Journal of Korea Foundry Society
• /
• v.25 no.3
• /
• pp.128-133
• /
• 2005

The effects of Mn and Cr on the crystallization behaviors of Fe-bearing intennetallics in A356 alloy were studied. Coarse and acicular ${\beta}-Al_{5}$FeSi phase in A356-0.20wt.%Fe alloy was modified into small ${\alpha}$-Al(Fe,Mn)Si and ${\alpha}$-Al(Fe,Cr)Si phases in response to Mn and Cr addition, respectively. Increasing of Mn addition amount elevates the crystallizing temperature of ${\alpha}$-Al(Fe,Mn)Si and the Mn/Fe ratio in the ${\alpha}$-Al(Fe,Mn)Si. Cr is more effective to modify ${\beta}-Al_{5}$FeSi in comparison with Mn. ${\alpha}$-Al(Fe,Mn)Si phase had BCC/SC dual structure.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.1
• /
• pp.5-14
• /
• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• Journal of Powder Materials
• /
• v.10 no.3
• /
• pp.195-200
• /
• 2003

Ni coated $Al_2O_3$ composite was successfully Prepared by the electroless deposition Process. The average size of Ni particles coated on the $Al_2O_3$ matrix powder was about 20 nm. It was hard to find any reaction compound as an impurity at interface between $Al_2O_3$ and Ni particles after sintering. The characterization of microstructure crystal structure and fracture behavior of the sintered body were investigated using XRD, TEM and Victors hardness tester, and compared with those of the sintered $Al_2O_3$ monolithic body. Many dislocations were observed in the Ni phase due to the difference of thermal expansion coefficient between $Al_2O_3$ and Ni phase, and no observed microcracks at their $Al_2O_3$ and Ni interface. In the $Al_2O_3$/Ni composite, the main fracture mode showed a mixed fracture with intergranular and transgranuluar type having some ,surface roughness. The fracture toughness was slightly increased due to the plastic deformation mechanism of Ni phase in the $Al_2O_3$/Ni composite.

• Korean Journal of Materials Research
• /
• v.17 no.2
• /
• pp.68-72
• /
• 2007

Optimum compositions for piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics were investigated in the range of $x=0{\sim}0.1$ covering rhombohedral to tetragonal phase regions. No impurity phases other than a perovskite phase were found and the grain size decreased with increasing x. A two-phase coexisting morphotropic phase area rather than boundary dividing rhombohedral and tetragonal phase regions appeared to exist at $x=0.05{\sim}0.08$. As for piezoelectric properties within morphotropic phase compositions, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($K_p$) showed peak values at x=0.065, 192 pC/N and 34%, respectively, indicating x=0.065 as an optimum composition for piezoelectric $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics.

• Transactions of the Korean hydrogen and new energy society
• /
• v.22 no.4
• /
• pp.424-431
• /
• 2011

The Sulfur-Iodine(SI) thermochemical hydrogen production process consists of three sections, which are so called the Bunsen reaction section, the $H_2SO_4$ decomposition section and the HI decomposition section. In order to identify the phase separation characteristics in the reaction conditions with the high solubility of $SO_2$, we conducted the Bunsen reaction at the low temperatures, ranging from 283 to 298K, with the $I_2/H_2O$ molar ratios of 2.5/16.0 and 3.5/16.0. The molar ratios of HI/$H_2SO_4$ products obtained from low temperature Bunsen reactions were ca. 2, indicating that there were no side reactions. The amount of reacted $SO_2$ was increased with decreasing the temperature, while the amounts of unreacted $I_2$ and $H_2O$ were decreased. In the phase separation of the products, the amount of a $H_2SO_4$ impurity in $HI_x$ phase was increased with decreasing the temperature, though the temperature has little affected on HI and $I_2$ impurities in $H_2SO_4$ phase.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.500-507
• /
• 1997

For fine control of operating temperature of shape memory alloy, we investigated the effect of thermal teratment of shape memory alloy with the impurity kind. The martensitic transformation temperature in a Cu-17.25Zn-15Al and Cu-17.25Zn-15Al-1Ag/Fe was measured using electrical resistivity as a function of quenching temperature. Order-disorder phase transition temperatures in parent phase were measured and kind of transition were distinguised by DSC(differential scanning calorimeter) with heating rate variation. And structual changes were studied with XRD. For the Cu-17.25Zn-15Al shape memory alloy, the order-disorder phase transition temperature, $T_{B2}$ and $T_{L21}$ was 809K and 610K and for the Cu-17.25Zn-15Al-1Ag and Cu-17.25Zn-15Al-1Fe specimen $T_{B2}$ and $T_{L21}$ was 794K and 610K, and 803K and 613K, respectively. In all the specimens, quenching from near $T_{B2}$ leads to an increase in martensitic temperature, whereas quenching from near $T_{L21}$ leads to an decrease in martensitic temperature.

• Journal of Magnetics
• /
• v.19 no.1
• /
• pp.68-71
• /
• 2014

Copper doped Zinc Oxide nanofilms were prepared using a simple and low cost wet chemical method. The microstructures, phase structure, Raman shift and optical absorption spectrum as well as magnetization were investigated for the nanofilms. Room temperature ferromagnetism has been observed for the nanofilms. Structural analyses indicated that the films possess wurtzite structure and there are no segregated clusters of impurity phase appreciating. The results show that the ferromagnetism in Copper doped Zinc Oxide nanofilms is driven either by a carrier or defect-mediated mechanism. The present work provides an evidence for the origin of ferromagnetism on Copper doped Zinc Oxide nanofilms.