• Korean Journal of Veterinary Research
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• v.49 no.1
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• pp.9-15
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• 2009

The present study was carried out to examine the sustained release effect of the implantable bovine somatotropin (SRI-BST) formula. In the blood profile test in steers, the bovine somatotropin concentration in serum by radioimmunoassay showed the peak concentration on the first day after the implantation of the SRI-BST formula, and concentration proceeded for 5 days (p < 0.05). The insulin-like growth factor-1 concentration showed the peak concentration on the seventh day after implantation of the SRIF-BST formula, and concentration proceeded for 10 days (p < 0.05). The glucose showed the peak concentration on the first day after implantation of the SRI-BST formula, and concentration continued for 3 days (p < 0.05). The blood urea nitrogen showed the lowest concentration on the third day after implantation of the SRI-BST formula, and concentration continued for 7 days (p < 0.05). These results proved that the SRIF-BST formula was the sustained release effects in steers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.67-74
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• 2009

Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.

• Journal of Korean Foot and Ankle Society
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• v.19 no.1
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• pp.7-10
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• 2015

Microfracture as a reparative strategy is the treatment of choice for an osteochondral lesion of talus. Although the results of microfracture are generally excellent, at least 30% of patients who received microfracture have acute or chronic ankle pain with several or unknown causes. The most important factor for unsatisfactory outcome after microfracture is the size of the lesion. For failed osteochondral lesion of talus, the second options are autologous osteochondral graft, autologous chondrocyte implantation, or re-microfracture. In this article, we present the autologous chondrocyte implantation as a second procedure for failed microfracture and compare its clinical outcome with other methods based on a literature review.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.293-297
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• 1998

The influence of ion implantation on surface properties of polymers was studied. We investigated microhardness, friction, wear and wettablility of polyimide. Energies of 50, 200keV were used with doses range from $1{\times}10^{13} to 1{\times}10^{16} [ions/cm^2]$. The implanted ion species were B, N and Ar. The microhardness of polyimide was increased after implantation for doses of $1{\times}10^{15}\; [ions/cm^2]$. A reduction of the friction coefficient was in most case correlated with a reduction of wear. The contact angles of water for $B^+,N^+$ implanted polyimide decreased from $76^{\circ}C$ to zero, as the fluencies increased at energies of 50 and 200 KeV. However, the contact angle of Ar ion implanted polyimide did not change under ambient room conditions even if the time elapsed. SEM measurement was performed to characterize the modified surface layer.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.289-300
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• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.