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http://dx.doi.org/10.5573/JSTS.2009.9.1.067

Monte Carlo Simulation of Ion Implantation Profiles Calibrated for Various Ions over Wide Energy Range  

Suzuki, Kunihiro (Fujitsu Laboratories Ltd.)
Tada, Yoko (Fujitsu Laboratories Ltd.)
Kataoka, Yuji (Fujitsu Laboratories Ltd.)
Nagayama, Tsutomu (Nissin Ion Equipment Co., Ltd.)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.9, no.1, 2009 , pp. 67-74 More about this Journal
Abstract
Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.
Keywords
Ion implantation; database; amorphous; monte carlo; electron stopping power;
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