• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.20-23
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• 2008

Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1270-1271
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• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.511-514
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• 2008

2-wavelength type white OLED devices have been made consisted of two layers; a layer with blue light emitting DPVBi host and other EML layer with yellow emitting rubrene dopant. New method to get white emitting device has been suggested by varying thicknesses of the DPVBi layer. The ITO/2-TNATA($150{\AA}$)/NPB($350{\AA}$)/DPVBi($35{\AA}$)/DPVBi:rubrene (2wt%,$200{\AA}$)/DPVBi($100{\AA}$)/Alq_3($50{\AA}$)/LiF($5{\AA}$)/Al($1000{\AA}$) structure has showed optimum results in CIE coordinates of (0.3233, 0.33). OLED devices with this structure has properties of $1.2d/m^2$ at turn-on voltage of 3.9V and $1037cd/m^2$ at 7.9V. This structure has advantages of simple fabrication and easy to emit the white color.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3711-3717
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• 2010

Four orange-red phosphorescent Ir(III) complexes were designed and synthesized based on the benzoylphenylpyridine ligand with a fluorine substituent. Multilayered OLEDs with the device structure, ITO/2-TNATA/NPB/CBP : 8% Ir(III) complexes/BCP/Liq/Al, were fabricated using these complexes as dopant materials. All the devices exhibited orange-red electroluminescence and their electroluminescent properties were quite sensitive to the structural features of the dopants in the emitting layers. Among these, the maximum luminance ($14700\;cd/m^2$ at 14.0 V) was observed in the device containing Ir(III) complex 1 as the dopant. In addition, its luminous, power and quantum efficiency were 11.7 cd/A, 3.88 lm/W and 9.58% at $20\;mA/cm^2$, respectively. The peak wavelength of electroluminescence was 606 nm with CIE coordinates of (0.61, 0.38) at 12.0 V. The device also showed stable color chromaticity with various voltages.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.107-111
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• 2013

A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.15-20
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• 2014

The fracture analysis of $SiN_x$ layers, which were deposited by low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) and could be used for an encapsulation layer of a flexible organic light emitting display (OLED), was performed by an electrical method. The specimens of metal-insulator-metal (MIM) structure were prepared using Pt and ITO electrodes. We stressed MIM specimen mechanically by bending outward with a bending radius of 15mm repeatedly and measured leakage current through the top and bottom electrodes. We also observed the cracks, were generated on surface, by using optical microscope. Once the cracks were initiated, the leakage current started to flow. As the amount of cracks increased, the leakage current was also increased. By correlating the electrical leakage current in the MIM specimen with the bending times, the amount of cracks in the encapsulation layer, generated during the bending process, was quantitatively estimated and fracture behavior of the encapsulation layer was also closely investigated.