• 전기전자학회논문지
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• 제20권2호
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• pp.171-173
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• 2016

본 연구에서는 휴대용 온열기의 에너지 효율을 향상시키기 위하여 indium tin oxide (ITO) 나노입자 페이스트와 PDMS를 이용하여 PDMS/ITO 나노입자 박막 면상발열체를 제작하였고, ITO 나노입자 박막 면상발열체와 PDMS/ITO 나노입자 면상발열체의 온도 유지특성 및 소비전력량을 분석하였다. PDMS층의 낮은 열전도도로 PDMS/ITO 나노입자 박막 면상발열체의 온도유지시간이 ITO 나노입자 박막 면상발열체에 비해 1.5배 증가하였으며, 소비 전력량은 35% 절감되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.231-236
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• 2004

A normally open thermopneumaticc-actuated microvalve has been fabricated and their properties are investigated. The advantages of the proposed microvalve are of the low cost fabrication process and the transparent optical property using polydimethylsiloxane (PDMS) and indium tin oxide (ITO) glass. The fabricated microvalves with in-channel configuration are easily integrated with other microfluidic devices on the same substrate. The fabrication process of thermopneumatic-actuated microvalvesusing PDMS is very simple and its performance is very suitable for a disposable lab-on-a-chip. The PDMS membrane deflection increases and the flow rates of the microchannel with microvalvels decrease as the applied power to the ITO heater increases. The powers at flow-off are dependent on the membrane thickness and the applied inlet pressure but are independent of the channel width of microvalves. The flow rate is well controlled by the switching function of ITO heater and the closing/opening times are around 20 sec and 25 sec, respectively.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.37-43
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• 2022

In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10^-3 Ω^-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1386-1387
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• 2006

PDMS와 ITO 유리를 이용하여 continuous-flow PCR chip을 제작하였다. PDMS를 이용하여 microchannel을 형성하여 주었고, ITO electrode를 heater와 sensor로 사용하기 위하여 반도체 공정을 통해 패턴을 형성하였다. microchannel내에 흐르는 시료의 온도를 제어하기 위하여 heater와 sensor를 calibration을 하였다. ITO heater는 인가된 전압에 대해 매우 선형적인 발열을 하였으며, ITO sensor는 온도에 대해 선형적인 저항 변화를 나타낸 바, 그 결과 continuous-flow PCR chip의 정확한 온도 제어가 가능하였다.

• KSTLE International Journal
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• 제7권1호
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• pp.22-26
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• 2006

A simple finite element analysis is performed to simulate the thermal characteristics of a micro sensor package with thin film heater embedded in the glass wall of a micro-channel. In this paper, Electric characteristics of ITO sputtered heater were presented in this study, which can be used as a map of heater design in the range of available system temperature. The effects of thermo-physical properties of materials, geometrical structure and boundary condition on the thermal performance are also investigated. Finally, the design of micro-flow induced thermal sensor that is capable of measuring fluid flow with a lower flow detection limit of approximately 24pL/s is presented.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.342-346
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• 2004

A thermopneumatic-actuated polydimethylsiloxane (PDMS) micropump has been fabricated and their properties are characterized. The diffusers are used as a flow-rectifying element instead of passive check valves. The advantages of the proposed microvalve are of the low cost fabrication process and the transparent optical property using PDMS and indium tin oxide (ITO) glass. We presented the PDMS micropump that is easily integrated with the in-channel PDMS microvalves on the same substrate. The flowrate of the micropump increases linearly as the applied pulse voltage to the ITO heater increases. The fabricated ITO heater resistance is 6.54k$\Omega$. The peak of the flow rate is observed at the duty ratio of 10% for the applied pulse voltage of 55V at 6Hz and the maximum flow rate of 78nl/min is measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.427-431
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• 2000

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

• 한국표면공학회지
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• 제33권5호
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.