• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.488-490
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• 2010

최근 심각한 환경오염 문제와 화석 에너지 고갈로 차세대 청정 에너지 개발에 대한 중요성이 증대되고 있다. 그중에서 태양정지는 공해가 적고, 자원이 무한적이며 반 영구적인 수명을 가지고 있어 미래에너지 문제를 해결할 수 있는 에너지원으로 기대되고 있다. 본 연구에서는 P3HT(regioregular poly(3-hexylthiophene))와 PCBM(fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester)을 전자 도너와 억셉터 물질을 하나의 브랜드로 광 활성층을 형성하는 BHJ(bulk hetero junction)구조를 갖는 고분자 유기 박막 태양전지를 각각 Toluene, Mono-Chlorobenzene, Dichlorobenzene에 $60^{\circ}C$, 200rpm으로 약 12시간동안 1wt%로 교반(Stirring)한 후에 중량비(1:1 wt%)로 혼합하여 스핀코팅(Spin-coating)으로 제작하였고, 완성된 소자의 광활성층 면적은 0.04cm2이며, $150^{\circ}C$에서 후속 열처리 공정을 통해 특성 향상이 측정 되었다. 태양전지 소자 구조는 Glass / ITO / PEDOT:PSS / P3HT : PCBM / Al이다. 전류-전압, FF(Fill Factor), 변환효율 측정을 위해 solar simulator를 AM1.5 조건(100 mW/cm2)으로 이용하였으며, 소자의 최대 전류밀도는 12mA/$cm^2$, 개방전압은 0.566V이고 F.F(Fill Factor)는 55.2%이고 변환효율은 3.7%이다. 후속 열처리후 더욱 좋은 성능을 갖게 되었고, 최대 효율은 Dichl orobenzene일 때 이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.379-385
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• 2006

A stacked white organic light-emitting diode (OLED) having a blue/orange emitting layer was fabricated by synthesizing nitro-DPVT, a new derivative of the blue-emitting material DPVBi on the market. The white-emission of the two-wavelength type was successfully obtained by using both nitro-DPVT for blue~emitting material, orange emission as a host material and Rubrene for orange emission as a guest material. The basic structure of the fabricated white OLED is glass/ITO/NPB$(200{\AA})$/nitro-DPVT$(100{\AA})$/nitro-DPVT:$Rubrene(100{\AA})/BCP(70{\AA})/Alq_3(150{\AA})/Al(600{\AA})$. To evaluate the. characteristics of the devices, firstly, we varied the doping concentrations of fluorescent dye Rubrene from 0.5 % to 0.8 % to 1.3 % to 1.5 % to 3.0 % by weight. A nearly pure white-emission was obtained in CIE coordinates of (0.3259, 0.3395) when the doping concentration of Rubrene was 1.3 % at an applied voltage of 18 V. Secondly, we varied the thickness of the NPB layer from $150{\AA}\;to\;200{\AA}\;to\;250{\AA}\;to\;300{\AA}$ by fixing doping with of Rubrene at 1.3 %. A nearly pure white-emission was also obtained in CIE coordinates of (0.3304, 0.3473) when the NPB layer was $250-{\AA}$ thick at an applied voltage of 16 V. The two devices started to operate at 4 V and to emit light at 4.5 V. The external quantum efficiency was above 0.4 % when almost all of the current was injected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.869-873
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• 2002

$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.97-102
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• 2004

용액 중에서 나노입자의 전기영동 특성을 이용한 전자종이용 잉크 제조를 위해 $TiO_2$ 나노입자를 저유전율 용매인 cyclohexane에 혼합한 후 용매와 용질의 비중차를 줄이기 위해 분말 상 polyethylen을 첨가하여 high energy milling의 방법으로 입자분쇄와 동시에 입자 표면에 고분자 풍을 코팅하였다. 용액내의 입자 분산성 향상과 용매 착색을 위하여 계면활성제와 oil-blue N을 첨가한 후 전자종이용 잉크를 제조하여 측정한 제타 전위 결과 cyclohexane 내에서 $TiO_2$의 제타전위는 -40mV 정도였으나 polyethylene으로 코팅한 후 계면활성제를 첨가하였을 경우 최대 -110mV 이상의 높은 값을 나타내었다. 실제 디스플레이 특성을 평가하기 위해 포토리소그래피를 이용하여 3인치 크기의 ITO glass 위에 $10{\mu}m$의 크기를 갖는 십자형의 격벽을 $40{\mu}m$의 높이로 균일하게 형성한 후 합성된 전자잉크로 주입하여 상부전극과 하부전극사이에 UV 경화제를 도포하여 UV 접합을 실시하였다. 격벽 내에서 입자의 mobility를 측정하여 환산된 전자잉크의 응답속도는 0.1cm/sec로 측정되었으나, 전기영동시 입자들의 움직임에 따른 반사광의 파형을 측정한 경우 0.07cm/sec의 응답속도를 나타내었다.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.148-154
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• 2020

Highly ordered mesoporous manganese oxide films were electrodeposited onto indium tin oxide coated (ITO) glass using sodium dodecyl sulfate (SDS) and ethylene glycol (EG) which were used as a templating agent and stabilizer for the formation of micelle, respectively. The manganese oxide films synthesized with surfactant templating exhibited a highly mesoporous structure with a long-range order, which was confirmed by SAXRD and TEM analysis. The unique porous structure offers a more favorable diffusion pathway for electrolyte transportation and excellent ionic conductivity. Among the synthesized samples, Mn₂O₃-SDS+EG exhibited the best electrochemical performance for a supercapacitor in the wide range of scan rate, which was attributed to the well-developed mesoporous structure. The Mn₂O₃ prepared with SDS and EG displayed an outstanding capacitance of 72.04 F g^-1, which outperform non-porous Mn₂O₃ (32.13 F g^-1) at a scan rate of 10 mV s^-1.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.359-363
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• 2005

The organic insulation devices with MIM (metal-insulator-metal) structures as PVP gate insulation films were prepared for the application of organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as solute and PGMEA (propylene glycol monomethyl ether acetate) as solvent. The cross-linked PVP insulation films were also prepared by addition of poly (melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross-linked PVP films was found to be about 300 pA with low current noise. and showed better property in electrical properties as compared with the co-polymer PVP insulation films. In addition, cross-linked PVP insulation films showed better surface morphology (roughness), showing about 0.11${\~}$0.18 nF in capacitance for all PVP film samples.