• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.141-141
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• 2009

본 실험에서는 비평형 마그네트론 스퍼터링 (Unbalanced Magnetron Sputtering, UBMS)을 이용하여 제작된 ITO 박막의 전기적, 광학적, 구조적인 특성들에서 기판온도와 자장 변화의 영향에 대해 연구하였다.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.31-32
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• 2007

저온 공정이 가능한 대향타겟식 스퍼터 (Facing Target Sputtering, FTS) 를 이용하여 Flexible display에 적용 가능한 polymer 기판위에 산소 가스 유량비 변화에 따라 ITO를 합성하였다. 산소의 유량이 2.8 sccm 일 때 가시광 영역에서 85%이상의 투과도와 2.26 ${\sim}$ 10$^{-4}$ ${\Omega}$ cm의 가장 낮은 전기적 특성을 나타내었다.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.176-177
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• 2000

ITO 박막은 투명전도성과 열-반사 특성을 효율적으로 가지면서도 제작과정에서 고온 열처리가 수반되어야만 한다. 이것은 기판물질에 제한을 가져왔고, ITO 박막이 적용된 기기의 중량이나 파손의 위험, 이동의 불편함을 주고 있다. 최근에는 이러한 불리함을 극복하기 위하여 저온 기판에서 투명전도성의 효율을 높여 기판을 유기물질로 대체하려는 연구들이 진행되고 있다. 유기물질 기판은 유리 기판에 비해 가벼운 중량, 작은 체적, 접을 수도 있고 휴대도 간편한 깨지지 않는 flexible opto-electrical devices 에 응용성이 크다$^{(l.2.3)}$ . (중략)

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.22.1-22.1
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• 2011

In this study, off-axis RF magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The structural, optical and electrical properties of the obtained films depending on deposition parameters, such as sputtering power, gas flow and working pressure, have been investigated. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 100-nm thick ITO films showed a resistivity of about $4.2{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 81% at a wavelength of 550nm. The transmittance of the ITO thin films by an insertion of $SiO_2$ thin films on ITO films was improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.522-525
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• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• Journal of Surface Science and Engineering
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• v.32 no.6
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• pp.671-676
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• 1999

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows : operating pressure of 5 mTorr, target-substrate distance of 45mm, do power of 20~30W, and oxygen gas ratio of 10%. The optical transmittance is above 80% at 550 nm, and the sheet resistance and resistivity of films are 24 Ω/square and $1.5\times$10$^{-3}$ Ωcm, respectively.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.