• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.35-38
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• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• 한국정밀공학회지
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• 제30권5호
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• pp.552-558
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• 2013

In recent years the interest on flexible display has been increasing as a future display due to its bendable characteristics. An ITO(indium tin oxide) layer, which is part of a flexible display, can be broken easily while bending because it is made of brittle materials. This brittle property can cause the malfunction of flexible display. To analyze fracture characteristics of ITO layer, bending test was conducted commonly. However, it is not possible to know specific phenomena on bended ITO layer by simple bending test only. Accordingly, in this study, the FE(finite element) model is developed similarly to a real flexible display to analyze stress distribution of flexible display under bending condition, especially on ITO layer. To validate FE model, actual bending test was conducted and the test results were compared with the simulation results by measuring reaction forces during bending. By using the developed model, FE analysis about the effect of design parameter (Thickness & Young's Modulus of BL) on ITO Layer was performed. By explained FE analysis above, this research draws a conclusion of reliable design guide of flexible display, especially on ITO layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.320-321
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• 한국재료학회지
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• 제13권2호
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• pp.106-110
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• 2003

Nano-sized powders of Indium Tin Oxide(ITO) were synthesized by a coprecipitation method. In order to investigate the gas sensing characteristics in the nanocrystalline ITO thick films with various particle sizes, ITO powders with the average particle diameter of 15, 30, and 70 nm respectively were synthesized. And the sensitivity of ITO thick films was measured upon exposure to a target gas($C_2$$H_{5}$ /OH) and some other Volatile Organic Compounds(VOCs), such as, toluene, methanol, benzene, chloroform. As a result, ITO thick films had high sensitivity for ethanol and higher sensitivity with smaller particle size.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1359-1360
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• 2006

lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

• 대한금속재료학회지
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• 제50권7호
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.71-75
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• 2018

In this study, we prepared OLED cell with ITO (Indium Tin Oxide) films grown on the glass substrate by facing targets sputtering. Before fabrication of OLED cells, we investigated properties of ITO films deposited at various sputtering conditions. To investigate properties of as-prepared films, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), hall-effect measurement. As a results, as-prepared ITO films have high transmittance of over 85 % in the visible range (300-800 nm) and a resistivity of under $10^{-4}$ (${\Omega}-cm$). Their resistivity increased as a function of oxygen gas flow and substrate temperature. OLED cell with ITO films were fabricated by thermal evpoeartor. Properties of OLEDs cell referring to properties of ITO films.

• 한국세라믹학회지
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• 제38권11호
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• pp.973-979
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• 2001

Sn을 도핑한 In$_2$O$_3$(ITO) 박막을 R.F. 마그네트론 반응성 스퍼터링법에 의해서 증착하였다. 동일한 마그네트론 스퍼터링 조건에서 증착위치에 따른 ITO 박막의 저항, 자유 전하 농도 및 이동도 전기적 특성을 조사하였다. 동일한 마그네트론 스퍼터링 조건임에도 불구하고, ITO 박막의 전기적 특성은 증착위치에 따라 불균질성을 나타내었다. 타겟의 중심에 위치한 기판위에 증착된 ITO 박막의 저항은 최소 값인 2~4$\times$$10^{-4}$ $\Omega$.cm인 반면, 중심에서 멀어질수록 박막의 전기 저항은 대칭적으로 증가하였다. ITO 박막의 밀도 측정 결과도 중심에서 이론 밀도 값의 97%에 해당하는 7.0g/$cm^3$를 나타내나, 위치가 중심에서 멀어질수록 박막의 밀도가 대칭적으로 감소하였다. ITO 박막에서 이동도와 전도도는 밀도에 직접적으로 영향을 받는 것이 실험적으로 확인되었다. ITO 박막의 밀도가 7.0g/$cm^3$(이론 밀도의 97%)인 경우, 자유행정거리와 입자크기(=주상의 직경)가 동일한 값을 가지나, 밀도가 이 보다 감소하면 자유행정거리와 입자크기의 차이는 더욱 증가하였다. 이 결과는 ITO 박막의 밀도가 7.0g/$cm^3$인 경우는 입계가 자유 전자의 전도에 중요한 산란 원으로 작용하는 반면, 그 외의 경우는 결정 내의 공격자점, 공공, 기공 등이 다른 산란 원으로 작용하고 있다는 것을 나타낸다.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.1-5
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• 2003

본 연구에서는 ITO (indium tin oxide)/glass 투명기판 위에 다층구조의 OELD (organic electroluminescent devices) 소자를 진공 열증착법으로 제작하였다. 발광층 재료로서 Alq$_3$(tris-(8-hydroxyquinoline)aluminum)물질을 사용하였고, 정공수송층으로는 TPD (triphenyl-diamine) 및 $\alpha-NPD$를 사용하였다. 정공주입층 재료로서 CuPc (Copper phthalocyanine)를 사용하였다. 또한 QD2(quinacridone2) 물질을 $Alq_3$ 발광층내에 약 $10\AA$ 두께로 증착하여 발광효율 향상을 시도하였다. 제작된 모든 소자의 발광개시전압은 약 7 V 이었으며, 정공수송층으로 TPD 물질대신에 열적안정성이 우수한 $\alpha-NPD$를 사용한 경우 휘도값과 발광효율이 개선되었다. $Alq_3$ 발광층 사이에 QD2 물질을 적층한 소자에서 발광효율은 1.55 lm/W 값을 나타내어 $Alq_3$ 발광층만을 사용한 경우에 비해 약 8배 발광효율이 향상되었다.