• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2021년도 춘계학술발표대회
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• pp.171-174
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• 2021

최근 사물인터넷(IoT) 환경에서 다양한 장비의 인터넷 통신이 가능하여 이에 적절한 경량 블록 암호 알고리즘에 대한 연구가 활발히 진행되고 있다. ICISC 2020에서 새로 발표된 국산 경량 블록 암호 알고리즘인 PIPO는 새로운 경량 S-Box를 조합한 unbalanced-Bridge 구조로 효율적인 비트슬라이싱 구현을 제공한다. IoT 환경에 PIPO가 적용되기 위해서는 부채널 분석에 대한 안전성이 보장되어야 한다. 따라서 본 논문에서는 PIPO가 1차 CPA 공격에 취약함을 확인한다. 그리고 부채널 공격에 대응하기 위해 1차 마스킹 기법을 제안한다. 제안한 마스킹 기법은 1차 CPA 공격에 안전하였으며, 마스킹 적용 전보다 -375%의 성능을 보였다. 그리고 기존 기법보다 1287% 속도가 빨라진 것을 확인하였다.

• 한국융합학회논문지
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• 제1권1호
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• pp.49-55
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• 2010

정보통신기술 발전에 따라 많은 장치들간의 통신과 네트워킹의 수용이 이뤄지고 있다. 장치간의 통신을 위한 융합 사업이 빠르게 발전되어지고 있다. IT 융합 통신은 무선통신에서 차후 개척분야의 하나로 여겨지고 있다. 본 논문에서는 IT 융합 구조에서 M2M, 지능형 자동차, 스마트그리드, U-헬스케어에 대한 보안 위협요소를 분석하였다. 임베디드 시스템 보안, 포렌식 보안, 사용자 인증과 키관리 기법에 대한 IT 융합 보안의 방향을 제안하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

• 디지털융복합연구
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• 제11권11호
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• pp.429-434
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• 2013

2011년 정부에서는 "IT 융합 기술예측조사 2025"를 발표하였다. 본 조사보고서는 10개 ICT 산업군을 대상으로 하였다. 디지털이라는 단어와 결합된 컨버전스는 정보통신 분야의 단위기술들의 융합을 통해 등장하는 새로운 제품이나 서비스를 일컫고 있다. 이러한 컨버전스 기술의 파급효과 및 컨버전스 사회의 현상들은 이미 경제, 사회, 문화등 사회의 전 부분에서 가시화되고 있다. 본 연구에서는 10개 ICT 산업군 중에서 우리 생활과 밀접하게 연관되어 있는 4개 산업군(IT-건설, IT-자동차, IT-섬유, IT-의료)에 대한 컨버전스 관련 내용들의 필요한 기술현황 및 전망 등을 기술하였다.

• 한국IT서비스학회지
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• 제12권1호
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• pp.143-161
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• 2013

Convergence is now the trend of knowledge information society. Information technology and knowledge transfer are main sources of convergence. There are many articles which studied outcomes of convergence while there are few articles that try to study the process of convergence. The purpose of this study is to investigate how convergence is dynamically formalized. For the analysis, we used Institutional Analysis and Development(IAD) framework from the point of convergence. IAD framework could synthetically study the origin and the process of convergence. We investigated the case of sillicon valley whether or not dynamics of ICT convergence could be explicable by IAD framework. The results shows that ICT technology and knowledge could be the enabler for the formation of convergence. ICT technology accelerates convergence and knowledge convergence from information converge different technologies and industries. This article provides a theoretical foundation for future research to analyze dynamics of ICT convergence by the IAD framework. For the future work, it is recommended that a study is to be empirically analyzed the dynamics of ICT convergence.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2012년도 춘계학술발표대회
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• pp.1046-1047
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• 2012

산업화 시대에서 지식정보화 사회로, 현재는 융합 사회로 진화되고 있다. 하지만 교육은 현재의 사회를 반영하지 못하고 아직도 단일 교과 중심의 교육이 이루어 지고 있다. 이에 고등학교 교육에 융합교육 모형을 개발하고자 한다.

• ETRI Journal
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• 제34권3호
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• pp.439-449
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• 2012

In recent innovation trends, one notable feature is the merging and overlapping of technologies: in other words, technological convergence. A key technological convergence is the fusion of biotechnology (BT) and information technology (IT). Major IT advances have led to innovative devices that allow us to advance BT. However, the lack of data on IT-BT convergence is a major impediment: relatively little research has analyzed the inter-disciplinary relationship of different industries. We propose a systematic approach to analyzing the technological convergence of BT and IT. Patent analysis, including citation and co-classification analyses, was adopted as a main method to measure the convergence intensity and coverage, and two portfolio matrices were developed to manage the technological convergence. The contribution of this paper is that it provides practical evidences for IT-BT convergence, based on quantitative data and systematic processes. This has managerial implications for each sector of IT and BT.

• ETRI Journal
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• 제31권4호
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• pp.351-356
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• 2009

We present a simple semiconductor process to fabricate nanogap arrays for application in molecular electronics and nano-bio electronics using a combination of freestanding silicon nanowires and angle evaporation. The gap distance is modulated using the height of the silicon dioxide, the width of the Si nanowires, and the evaporation angle. In addition, we fabricate and apply the nanogap arrays in single-electron transistors using DNA-linked Au nanoparticles for the detection of DNA hybridization.

• 한국멀티미디어학회논문지
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• 제17권11호
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• pp.1354-1362
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• 2014

In order to solve the complicated problems faced by the spread of diversified information devices and changes in the user environment in recent years, the importance of training creative talent as well as the need for interdisciplinary convergent approach have emerged. As a future technology development project, convergence education with the design sector for training creative talent in the IT field is also urgent. In this study, we recognized the importance and problems of the convergent approach between IT and design sector by examining the convergence theory and cases with a focus on effective creativity development and sought a new direction for convergence education in the future by investigating the awareness on the convergent approach of college students and analyzing the results. This will be able to have significance as a basic study for discovering creative and innovative convergent talent in the IT and design sector in the future and strengthening basic competence.

• ETRI Journal
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• 제28권5호
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.