• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.23-30
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• 2000

To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

• Journal of Digital Convergence
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• v.10 no.2
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• pp.141-146
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• 2012

U-healthcare, which grafted advanced IT technology onto medical technology, is in the limelight because it can provide medical services at anytime and anywhere. U-healthcare system applied RFID technology for Implantable Medical Device (IMD), but patient's biometric information can be easily exposed to third parties. In this article, RFID-based U-healthcare authentication protocol is proposed to prevent illegal usage for personal biometric information exposed to the third patty. The proposed protocol guarantees patients' biometric information integrity as compounding random numbers between administrators and hospital/clinic managers, and uses continuous number SEQ and time stamp T to synchronize IMD/administrators and administrators/hospital managers. Also, to protect user's privacy from the third party, patients' biometric information can be safely guarded by managing patients' security identifiers by administrators.

• Imaging Science in Dentistry
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• v.50 no.4
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• pp.323-330
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• 2020

Purpose: The mastoid region is ideal for studying sexual dimorphism due to its anatomical position at the base of the skull. This study aimed to determine sex in the Iranian population based on measurements of the mastoid process using different data mining algorithms. Materials and Methods: This retrospective study was conducted on 190 3-dimensional cone-beam computed tomographic (CBCT) images of 105 women and 85 men between the ages of 18 and 70 years. On each CBCT scan, the following 9 landmarks were measured: the distance between the porion and the mastoidale; the mastoid length, height, and width; the distance between the mastoidale and the mastoid incision; the intermastoid distance (IMD); the distance between the lowest point of the mastoid triangle and the most prominent convex surface of the mastoid (MF); the distance between the most prominent convex mastoid point (IMSLD); and the intersecting angle drawn from the most prominent right and left mastoid point (MMCA). Several predictive models were constructed and their accuracy was compared using cross-validation. Results: The results of the t-test revealed a statistically significant difference between the sexes in all variables except MF and MMCA. The random forest model, with an accuracy of 97.0%, had the best performance in predicting sex. The IMSLD and IMD made the largest contributions to predicting sex, while the MMCA variable had the least significant role. Conclusion: These results show the possibility of developing an accurate tool using data mining algorithms for sex determination in the forensic framework.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.618-627
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• 2005

In this paper, we have compared and analyzed the performance of high amplifier using Doherty technique to improve linearity and efficiency of base station and repeater Power amplifier for WCDMA. This Doherty amplifier implements with 3dB branch line coupler and $90^{\circ}C$ transmission line The phase offset line is designed to maintain the high linearity and efficiency at the low efficiency Period of the power amplifier CW 1-tone experimental results at the WCDMA frequency $2.11{\sim}2.17GHz$ shows that Doherty amplifier which achieves power add efficiency(PAE) of 50% at 6dB back off the point from maximum output power 52.3 dBm, obtains higher efficiency of 13.3% than class AB Finding optimum bias Point after adjusted gate voltage, Doherty amplifier shows that $IMD_3$ improves 4dB.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Journal of information and communication convergence engineering
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• v.14 no.3
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• pp.147-152
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• 2016

In radio-over-fiber (RoF) systems, nonlinear compensation is essential to improve performance. Among the several existing nonlinear compensation techniques, we investigate a predistortion technique for a directly modulated laser in an RoF system. First, we obtain the input-to-output response of a directly modulated laser at 160, 820, and 1,540 MHz. The results show that the laser response is dependent on the frequency band. Second, we design an optimal predistortion circuit to compensate for the nonlinear responses of three frequency bands. We design the predistortion circuit with two options: each predistortion circuit for each frequency band and one single predistortion circuit for all the three frequency bands. Finally, we present the simulation results of the predistortion system obtained using a commercial simulator. These results show that the third intermodulation distortion (IMD3) is improved by 0.6-9 dB for the three frequency bands with only a single predistortion circuit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.283-288
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• 2008

A post-linearization technique for the differrential CMOS LNA is presented. The proposed method uses an additional cross-coupled common-source FET pair to cancel out the third-order intermodulation ($IM_3$) current of the main differential amplifier. This technique is applied to enhance the linearity of CMOS LNA using $0.18-{\mu}m$ technology. The LNA achieved +10.2 dBm IIP3 with 13.7 dB gain and 1.68 dB NF at 2 GHz consuming 11.8 mA from a 1.8-V supply. It shows IIP3 improvement by 6.6 dB over the conventional cascode LNA without the linearizing circuit.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.6A
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• pp.634-639
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• 2006

In this paper an MMIC 2-stage power amplifier is designed and fabricated for 5GHz wireless LAN applications using $0.5{\mu}m$ gate length PHEMT transistors. The PHEMT gate width is optimized in order to meet the linearity and efficiency of the MMIC power amplifier. The $0.5{\mu}m\times600{\mu}m$ PHEMT for the drive stage and $0.5{\mu}m\times3000{\mu}m$ PHEMT for the amplification stage are the optimized sizes to achieve more than 25dBc of third order IMD at the power level of 3dB back-off from the input P1dB and more than 22dBm output power under a supply voltage of 3.3V. The two-stage MMIC power amplifier is designed to be used for the both of HIPERLAN/2 and IEEE 802.11a because of its broadband characteristics. The fabricated PHEMT MMIC power amplifier exhibits a 20.1dB linear power gain, a maximum 22dBm output power, a 24% power added efficiency under 3.3V supply voltage. The input and output on-chip matching circuits are included on a chip of $1400\times1200{\mu}m^2$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.111-114
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• 2005

The isolation performance of the S-band single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide (GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9dB is obtained with the coplanar wire-bond interconnection (CWBI) at 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion (IMD3) are less than 2.43 dB over 2.5 CHz $\sim$ 4 GHz and greater than 64 dBc.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.