• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

• Journal of Welding and Joining
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• v.29 no.6
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.2
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• pp.85-92
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• 2011

Evaluation of the removal efficiencies of Fe(II) by reactive sand media coated with manganese (MCS), iron (ICS) and both of iron and manganese (IMCS) was investigated as functions of solution pH ranging from 2 to 9, reaction time and concentration of Fe(II) in a batch reactor using each reactive medium and additional oxidants such as $KMnO_4$ and NaOCl. When only Fe(II) was present in solution without any reactive medium, removal of Fe(II) was quite low below pH 5 due to a slow oxidation of Fe(II) and/or negligible precipitation but greatly increased above pH 5 due to a rapid oxidation of Fe(II) and subsequent precipitation of oxidized Fe species. ICS showed negligible efficiency on the removal of Fe(II) through adsorption. However, an efficient removal of Fe(II) was observed at low solution pH in the presence of IMCS or MCS through rapid oxidation and subsequent precipitation. Removal efficiency of Fe(II) by IMCS in the presence or absence of NaOCl was quite similar. Removal rate of Fe(II) by IMCS and additional oxidants gradually increased as the solution pH increased. From the kinetic experiments, removal pattern of Fe(II) was better described by pseudo-second-order equation than pseudo-first-order equation. A rapid removal of Fe(II) using IMCS in the presence of $KMnO_4$ was observed in the first 10 min. The initial removal rate of Fe(II) using $KMnO_4$ was 14,286 mg/kg hr. In case of using NaOCl, the removal of Fe(II) occurred rapidly in the first 6 hrs and then reached the near-equilibrium state. Removal of Fe(II) on IMCS was well expressed by Langmuir isotherm and the maximum removal capacity of Fe(II) was calculated as 1,088 mg/kg.

• Journal of Power Electronics
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• v.15 no.3
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• pp.702-711
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• 2015

In this paper, an effective carrier-based modulation (CBM) strategy to reduce the switching losses for indirect matrix converters (IMCs) is presented. The discontinuous pulse width modulation method is applied to decrease the switching numbers in one carrier cycle, and an optimum offset voltage is selected to avoid commutations of the high output phase currents. By decreasing the switching numbers along with avoiding commutation of the high currents, the proposed CBM strategy significantly reduces the switching losses in IMCs. In addition, the proposed CBM strategy is independent of load conditions, such as load power and power factor, and it has good performance in terms of the input/output waveforms. Simulation and experimental results are provided to verify the effectiveness of the proposed CBM strategy.

• Journal of Power Electronics
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• v.19 no.5
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• pp.1142-1152
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• 2019

This paper presents a control method for reducing the current distortion in an indirect matrix converter (IMC) operating in boost mode under unbalanced input conditions. IMCs operating in boost mode are useful in distributed generation (DG) systems. They are connected with renewable energy systems (RESs) and the grid to transmit the power generated by the RES. However, under unbalanced voltage conditions of the RES, which is connected with the input stage of the IMC operating in boost mode, the input-output currents are distorted. In particular, the output current distortions cause a ripple of the power, which is transferred to the grid. This aggravates the reliability and stability of the DG system. Therefore, in this paper, a control method using positive/negative sequence voltages and currents is proposed for reducing the current distortion of both side in IMCs operating in boost mode. Simulation and experimental results have been presented to validate effectiveness of the proposed control method.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.170-174
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• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1158-1166
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• 2012

Thus, all systems and sensors corresponding to navigation are integrated to an INS (Integrated Navigation System) or an IBS (Integrated Bridge System). Propulsion automation systems, propulsion systems, auxiliary systems, and power management systems are integrated to an ICMS (Integrated Control and Monitoring System), an IPMS (Integrated Platform Management System), and IMCS (Integrated Monitoring and Control System). This paper introduces the results of designing and implementing an Integrated Interface System which ties up diverse system interfaces via network and inversely converts network signals into a proper interface signal type connected to other systems.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.218-220
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• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.87-92
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• 2008

The interface microstructure of Sn-3.5Ag/Cu joint was modified by electroplating varying amount of Zn on Cu UBM. As the amount of Zn dissolved in Sn-3.5Ag solder increased with the electroplating Zn thickness, Cu-Sn IMCs such as $Cu_6Sn_5$ and $Cu_3Sn$ were replaced by Zn-containing IMCs such as $Cu_5Zn_8$ and $Ag_5Zn_8$, which increased the drop reliability of solder joints significantly. When the amount of Zn dissolved in solder was about 3.8wt%, drop resistance was best due to the effective suppression of Cu-Sn IMC and voids at the interface.