• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.11 no.3
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• pp.235-240
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• 2001

This study was performed to compare the lead levels of 20 quality control standard samples(KOSHA:18-2000) and 72 field samples in lead-acid battery manufacturing plant between ICP and portable-XRF methods. 1. While the proficiencies of 20 quality control standard samples by ICP were 100%, those of analytic result values by XRF were 75%. 2. The correlation coefficient(r) between the reference values for quality control (REF) and the analytic result values by ICP (ICP) was 1.0(p<0.05), and simple linear regression equation and the coefficient(R2) were REF = -0.0009 + 1.016 ICP and 0.9997, respectively. 3. The correlation coefficient(r) between the analytic result values of quality control standard samples by ICP (ICP) and by XRF (XRF) was 0.975(p<0.05), and simple linear regression equation and the coefficient(R2) were ICP = -0.0003 + 1.002 XRF and 0.950, respectively. 4. The correlation coefficient(r) between the analytic result values for lead samples of a lead-acid battery manufacturing plant by ICP (ICP) and by XRF (XRF) was 0.993(p<0.05), and simple linear regression equation and the coefficient(R2) were ICP = -2.058 + 0.996 XRF and 0.987, respectively. 5. While the frequency distributions of XRF /ICP(Ratio) for each ICP concentration levels in a lead-acid battery manufacturing plant revealed high proportion in ratio range of 0.876-1.125 than in ration range of 1.126-1.375. Also, ICP concentration level in ration range of 0.786-1.125 was increased with increase of frequency distribution of XRF/ICP. 6. The limit of detection of XRF on lead was determined to be $6.11{\mu}g$/filter The data presented in this study indicated that relationship for lead level of quality control samples and field samples in a lead -acid battery manufacturing plant by ICP and portable-XRF methods was proved. The practicing industrial hygienist can use portable-XRF to produce a rapid on-site determination of lead exposure that can immediately becommunicated to workers and help identify appropriate levels of personal protection.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.98-98
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• 2000

초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

• BMB Reports
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• v.32 no.5
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• pp.456-460
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• 1999

The promoter of the HSV-1 VP16 gene contains binding sites for the cellular transcription factors such as USF, CTF, and Sp1, each of which affects basal level expression of the VP16 gene. Transcription of the VP16 gene was induced by viral immediate-early proteins, ICP0 and ICP4, in a synergistic manner but repressed by ICP22. To gain further insight into the role of ICP0 in the expression of the VP16 gene during virus infection, several mutants with deletions in each of their transcriptional regulatory elements were generated. According to transient gene expression assays of these mutants using the CAT gene as a reporter, the USF and CTF binding sites were necessary for efficient induction of the promoter in the presence of transfected ICP0 or during virus infection, whereas the Sp1 binding site had little effect on ICP0-mediated VP16 expression. These results indicate that the immediate early proteins of HSV-1 regulate expression of the VP16 gene during virus infection by modulating the activities of cellular transcription factors such as USF and CTF.

• Korean Journal of Food Science and Technology
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• v.48 no.3
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• pp.289-295
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• 2016

To elucidate the new biologically active ingredient in commercial instant coffee, a crude polysaccharide (ICP-0) was isolated by ethanol precipitation, and its immunostimulatory activity was estimated. ICP-0 mainly consisted of galactose (55.5%), mannose (25.7%), arabinose (6.0%), and galacturonic acid (10.1%), suggesting the possibility of its existence as a mixture of galactomannan or pectic polysaccharide. ICP-0 showed proliferative activity in peritoneal macrophages and splenocytes. ICP-0 dose-dependently augmented the production of nitric oxide and reactive oxygen species by peritoneal macrophages. In addition, murine peritoneal macrophages stimulated by ICP-0 showed enhanced production of various cytokines (tumor necrosis factor-${\alpha}$, interleukin-6, and interleukin-12) as compared to unstimulated murine peritoneal macrophages. In an in vitro assay for assessing intestinal immunomodulation, the ICP-0-treated Peyer's patch cells showed higher bone marrow cell proliferation activity at $100{\mu}g/mL$ and higher production of granulocyte-macrophage colony-stimulating factor, compared to the untreated Peyer's patch cells. These results suggest that polysaccharides in commercial instant coffee have a potentiality for macrophage functions and the intestinal immune system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.227-232
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• 2002

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.38-42
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• 2017

Vanadium nitride (VN) coatings were deposited using inductively coupled plasma (ICP) assisted sputtering at different ICP powers. Microstructural, crystallographic and mechanical characterizations were performed by FE-SEM, AFM, XRD and nanoindentation. The results show that ICP has significant effects on coating's microstructure, structural and mechanical properties of VN coatings. With an increase in ICP power, coating microstructure evolved from a porous columnar structure to a highly dense one. Single- phase cubic (FCC) VN coatings with different preferential orientations and residual stresses were obtained as a function of ICP power. Average crystal grain sizes of single phase cubic (FCC) VN coatings were decreased from 10.1 nm to 4.0 nm with an increase in ICP power. The maximum hardness of 28.2 GPa was obtained for the coatings deposited at ICP power of 200 W. The smoothest surface morphology with Ra roughness of 1.7 nm was obtained in the VN coating sputtered at ICP power of 200 W.

• Analytical Science and Technology
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• v.15 no.2
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• pp.180-183
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• 2002

The new useful method for the direct determination of trace boron in iron matrix was studied by applying the precipitation of $Fe(OH)_3$ and ICP-AES. Optimum pH range was 11 ~ 12.5. Linear concentration range of boron was $0.01{\sim}1.0{\mu}g/m{\ell}$ in $5000 {\mu}g/m{\ell}$ solution as iron.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.123-129
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• 2012

Nanocrystalline CrN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 500 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has an significant influence on coating microstructure and mechanical properties of CrN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain size of CrN coatings were decreased from 11.7 nm to 6.6 nm with increase of ICP power. The maximum nanohardness of 23.0 GPa was obtained for the coatings deposited at ICP power of 500 W. Preferred orientation in CrN coatings also vary with ICP power, exerting an effective influence on film nanohardness.