• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.38-42
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• 2017

Vanadium nitride (VN) coatings were deposited using inductively coupled plasma (ICP) assisted sputtering at different ICP powers. Microstructural, crystallographic and mechanical characterizations were performed by FE-SEM, AFM, XRD and nanoindentation. The results show that ICP has significant effects on coating's microstructure, structural and mechanical properties of VN coatings. With an increase in ICP power, coating microstructure evolved from a porous columnar structure to a highly dense one. Single- phase cubic (FCC) VN coatings with different preferential orientations and residual stresses were obtained as a function of ICP power. Average crystal grain sizes of single phase cubic (FCC) VN coatings were decreased from 10.1 nm to 4.0 nm with an increase in ICP power. The maximum hardness of 28.2 GPa was obtained for the coatings deposited at ICP power of 200 W. The smoothest surface morphology with Ra roughness of 1.7 nm was obtained in the VN coating sputtered at ICP power of 200 W.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.77-83
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• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.234.1-234.1
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• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• Journal of the Korean Chemical Society
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• v.29 no.4
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• pp.382-389
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• 1985

The effect of plasma operational parameters for the determination of rare earth elements(REE) by means of inductively coupled plasma(ICP) spectrometry was investigated. While the increase in the flow rate of carrier gas argon enhanced the sensitivity and lowered the detection limit, significant ionization interferences were observed. The decrease in RF power increased the signal to background ratio. The observation point showing the lowest ionization interference was slightly higher than the position where the spatial profile of the analyte reached the maximum. The detection limits of the spectral lines commonly used for the determination of REE were measured and the spectral lines relatively free from spectral interferences were chosen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.35-39
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• 2009

A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.82-86
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• 1999

Electron Energy Distribution Function(EEDF) were treasured In Radio-Frequency Inductively Coupled Plasma(RFlCP) using a probe rrethocl Measurerrents were conducted in argon discharge for pressure from 10[mTorr] to 4O[mTorr] and input rf power from 100[W] to 600[W] and flow rate from 3[sccm] to 12[sccm]. Spatial distribution of electron energy distribution function were measured for discharge with same aspoct ratio (R/L=2). Electron energy distribution function strongly depended on both pressure and power. Electron energy distribution function increased with increasing flow rate. Radial distribution of the electron energy distribution function were peaked in the plasma center. Normal distribution of the electron energy distribution function were peaked in the center between quartz plate and substrate. From the results, we can find out the generation mechanism of Radio Frequency Inductively Coupled Plasma. And these results contribute the application of a simple Inductively Coupled Plasma(ICP).a(ICP).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1110-1115
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• 2009

We studied on the design of electrical parameters for ICP(Inductively Coupled Plasma) light sources which can be effective to improve the electrical power efficiency of it. These parameters were derivated from Barkhausen theory about the oscillating condition of a ballaster. The relationships of $f-I_p$ and f-n were calculated theoretically and then these relationships were compared with the measured results about $I_p$ and power depending to a discharge length(l) of ICP light source. Finally, we can see that a specific range of induced current depending to a discharge length would be necessary to minimize the change of magnetization inductance and driving frequency at driving.