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http://dx.doi.org/10.4313/JKEM.2006.19.6.538

Inductively Coupled Plasma Chemical Vapor Deposition System for Thin Film Ppassivation of Top Emitting Organic Light Emitting Diodes  

Kim Han-Ki (국립금오공과대학교 신소재시스템공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.6, 2006 , pp. 538-546 More about this Journal
Abstract
We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.
Keywords
Inductively-coupled-plasma chemical vapor deposition; Top-emitting organic light emitting diodes; $SiN_{x}$; Passivation; Linear-type antenna;
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