• Applied Chemistry for Engineering
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• v.35 no.3
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• pp.260-265
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• 2024

To synthesize an antistatic material for use in semiconductor wafer transport trays, in-situ polymerization of poly(methyl methacrylate) (PMMA) and polyurethane (PU) incorporating carbon nanotubes was designed and conducted. The newly synthesized composites were evaluated for their thermal and electrical conductivity properties under conditions mimicking commercial device manufacturing processes. Comparative analysis of their respective performances revealed that both PMMA and PU containing carbon nanotubes exhibited enhanced thermal properties and superior electrical conductivity as the nanotube content increased. Morphology of the composites synthesized via in-situ polymerization was confirmed to be excellent through FE-SEM analysis, demonstrating good dispersibility. Both PMMA and PU incorporating carbon nanotubes showed outstanding surface resistance values of 10³ Ω/□, indicating their suitability as antistatic materials for semiconductor applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.71-80
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• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.61-67
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• 2017

As transistor density increases rapidly, a heat flux from IC device rises at fast rate. Thermal issues raised by high heat flux cause IC's performance and reliability problems. To solve these thermal management problems, the conventional cooling methods of IC devices were reached their thermal limit. As a result, alternative cooling methods such as liquid heat pipe, thermoelectric cooler, thermal Si via and etc. are currently emerging. In this paper microchannel liquid cooling system with TSV was investigated. The effects of 2 coolants (DI water and ethylene glycol 70 wt%) and 3 metal bumps (Ag, Cu, Cr/Au/Cu) on cooling performance were studied, and the total heat flux of various coolant and bump cases were compared. Surface temperature of liquid cooling system was measured by infrared microscopy, and liquid flowing through microchannel was observed by fluorescence microscope. In the case of ethylene glycol 70 wt% at $200^{\circ}C$ heating temperature, the total heat flux was $2.42W/cm^2$ and most of total heat flux was from liquid cooling effect.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.116-126
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• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2577-2582
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• 2013

A novel stick-shaped portable sensing device featuring a microhole array interface between the polyvinylchloride-2-nitrophenyloctylether (PVC-NPOE) gel and water phase was developed for in-situ sensing of perchlorate ions in real water samples. Perchlorate sensitive sensing responses were obtained based on measuring the current changes with respect to the assisted transfer reaction of perchlorate ions by a perchlorate selective ligand namely, bis(dibenzoylmethanato)Ni(II) (Ni(DBM)2) across the polarized microhole array interface. Cyclic voltammetry was used to characterize the assisted transfer reaction of perchlorate ions by the $Ni(DBM)_2$ ligand when using the portable sensing device. The current response for the transfer of perchlorate anions by $Ni(DBM)_2$ across the micro-water/gel interface linearly increased as a function of the perchlorate ion concentration. The technique of differential pulse stripping voltammetry was also utilized to improve the sensitivity of the perchlorate anion detection down to 10 ppb. This was acquired by preconcentrating perchlorate anions in the gel layer by means of holding the ion transfer potential at 0 mV (vs. Ag/AgCl) for 30 s followed by stripping the complexed perchlorate ion with the ligand. The effect of various potential interfering anions on the perchlorate sensor was also investigated and showed an excellent selectivity over $Br^-$, $NO_2{^-}$, $NO_3{^-}$, $CO{_3}^{2^-}$, $CH_3COO^-$ and $SO{_4}^{2^-}$ ions. As a final demonstration, some regional water samples from the Sincheon river in Daegu city were analyzed and the data was verified with that of ion chromatography (IC) analysis from one of the Korean-certified water quality evaluation centers.

• Journal of IKEEE
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• v.13 no.2
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• pp.208-215
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• 2009

The high efficiency power management IC(PMIC) with DT-CMOS(Dynamic Threshold voltage MOSFET) switching device for portable application is proposed in this paper. Because portable applications need high output voltages and low output voltage, Boost converter and Buck converter are embedded in One-chip. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. Boost converter and Buck converter, are based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 92.1% and 95%, respectively, at 100mA output current. And Step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.326-329
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• 2016

UAVs(Unmanned Aerial Vehicle) can be used in variant fields fornot only combat, but also recon, observation and exploration. Moreover, UAVs capacity can be expanded to impossible missions for existing surveillance system such as SAR(Synthetic Aperture Radar) technology that collecting images from all weather conditions. In recent days, with development of highly efficient IC and lightened system technology, there are significant increase of researches and demands to make SAR sensor as a payload of UAV. Therefore, this paper contains development process and results of small signal generator and RF device as a core module of SAR system based on the digital device of DDS.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.231-238
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• 2013

This paper describes a DC-DC converter IC for Flat Panel Displays. In case of operate LCD devices various type of DC supply voltage is needed. This device can convert DC voltage from 6~14[V] single supply to -5[V], 15[V], 23[V], and 3.3[V] DC supplies. In order to meet current and voltage specification considered different type of DC-DC converter circuits. In this work a negative charge pump DC-DC converter(-5V), a positive charge pump DC-DC converter(15V), a switching Type Boost DC-DC converter(23V) and a buck DC-DC converter(3.3V). And a oscillator, a thermal shut down circuit, level shift circuits, a bandgap reference circuits are designed. This device has been designed in a 0.35[${\mu}m$] triple-well, double poly, double metal 30[V] CMOS process. The designed circuit is simulated and this one chip product could be applicable for flat panel displays.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.47-52
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• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

• Journal of Satellite, Information and Communications
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• v.9 no.1
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• pp.13-16
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• 2014

In applying LCD to TV application, one of the most significant factors to be improved is image sticking on the moving picture. LCD is different from CRT in the sense that it's continuous passive device, which holds images in entire frame period, while impulse type device generate image in very short time. To reduce image sticking problem related to hold type display mode, we made an experiment to drive TN-LCD like CRT. We made articulate images by fast refreshing images, and we realized the ratio of refresh time by counting between on time and off time for video signal input during 1 frame (16.7ms). Conventional driving signal cannot follow fast on-off speed, so we evaluated new signal generator using SDI (Serial Data Interface) mode signal generator. We realized articulate image generation similar to CRT by high fast full HD (High Definition) signals and TN-LCD overdriving. As a result, reduced image sticking phenomenon was validated by naked eye and response time measurement.