• Title/Summary/Keyword: IC circuit

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High Voltage Driver IC for LCD/PDP TV Power Supply (LCD/PDP TV 전원장치용 고전압 구동 IC)

  • Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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Characteristics of direct laser micromachining of IC substrates using a nanosecond UV laser (나노초 UV 레이저 응용 IC 기판 소재 조성별 가공 특성)

  • Sohn, Hyon-Kee;Shin, Dong-Sig;Choi, Ji-Yeon
    • Laser Solutions
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    • v.15 no.3
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    • pp.7-10
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    • 2012
  • Dimensions (line/space) of circuits in IC substrates for high-end chips (e.g. CPU, etc.) are anticipated to decrease as small as $10{\mu}m/10{\mu}m$ in 2014. Since current etch-based circuit-patterning processes are not able to address the urgent requirement from industry, laser-based circuit patterning processes are under active research in which UV laser is used to engrave embedded circuits patterns into IC substrates. In this paper, we used a nanosecond UV laser to directly fabricate embedded circuit patterns into IC substrates with/without ceramic powders. In experiments, we engraved embedded circuit patterns with dimensions (width/depth) of abut $10{\mu}m/10{\mu}m$ and $6{\mu}m/6{\mu}m$ into the IC substrates. Due to the recoil pressure occurring during ablation, the circuit patterning of the IC substrates with ceramic powders showed the higher ablation rate.

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Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply (공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계)

  • Song, Ki-Nam;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Jang, Kyung-Oun;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.801-807
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    • 2009
  • In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.

A Study on the Design of Green Mode Power Switch IC (그린 모드 파워 스위치 IC 설계에 관한 연구)

  • Lee, Woo-Ram;Son, Sang-Hee;Chung, Won-Sup
    • Journal of IKEEE
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    • v.14 no.2
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    • pp.1-8
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    • 2010
  • In this paper, Green Mode Power IC is designed to reduce the standby power. The proposed and designed IC works for the Switch Mode Power Supply(SMPS) and has the function of PWM. To reduce the unnecessary electric power, burst mode and skip mode section are introduced and controlled by external power MOSFET to diminish the standby power. The proposed IC is designed and simulated by KEC 30V-High Voltage 0.5um CMOS Process. The structure of proposed IC is composed of voltage regulator circuit, voltage reference circuit, UVLO(Under Voltage Lock out) circuit, Ibias circuit, green circuit, PWM circuit, OSC circuit, protection circuit, control circuit, and level & driver circuit. Measuring the current consumption of each block from the simulation results, 1.2942 mA of the summing consumption current from each block is calculated and ot proved that it is within the our design target of 1.3 mA. The current consumption of the proposed IC in this paper is less than a half of conventional ICs, and power consumption is reduced to the extent of 1W in standby mode. From the above results, we know that efficiency of proposed IC is superior to the previous IC.

Operation of NMOSFET-only Scan Driver IC for AC PDP (NMOSFET으로 구성된 AC PDP 스캔 구동 집적회로의 동작)

  • 김석일;정주영
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.7
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    • pp.474-480
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    • 2003
  • We designed and tested a new scan driver output stage. Compared to conventional CMOS structured scan driver IC′s, the new NMOSFET-only scan driver circuit can reduce the chip area and therefore, the chip cost considerably. We confirmed the circuit operation with open drain power NMOSFET IC′s by driving 2"PDP test panel. We defined critical device parameters and their optimization methods lot the best circuit performance.

A System IC for Controlling the Fire Prevention (화재방지제어 시스템 IC)

  • Kim, Byung-Cheul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.4
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    • pp.737-746
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    • 2009
  • In this study, we have developed one chip system IC for preventing the overload, detecting an abnormal conditions, and controlling the fire prevention in the intelligent home appliances. For the purpose, a circuit detectable an electric leak for preventing an electric shock, and a circuit detectable arc that has effect directly on the fire are designed. The circuits designed on every block are verified by comparing simulation with bread-boarding using a standard transistors. The system IC is fabricated by using 34 V 2 metal $1.5{\mu}m$ bipolar transistor process from evaluation results. The electrical performances of IC application circuits and the system IC equipped on PCB board are evaluated. It is confirmed that the system IC is well operated for arc and ground fault(GF) signal.

DPSS UV Laser Projection Ablation of IC Substrates using an INVAR Mask (INVAR 마스크 응용 반도체 기판 소재의 고체 UV 레이저 프로젝션 어블레이션)

  • Sohn, Hyonkee;Choe, Hanseop;Park, Jong-Sig
    • Laser Solutions
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    • v.15 no.4
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    • pp.16-19
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    • 2012
  • Due to the fact that the dimensions of circuit lines of IC substrates have been forecast to reduce rapidly, engraving the circuit line patterns with laser has emerged as a promising alternative. To engrave circuit line patterns in an IC substrate, we used a projection ablation technique in which a metal (INVAR) mask and a DPSS UV laser instead of an excimer laser are used. Results showed that the circuit line patterns engraved in the IC substrate have a width of about 15um and a depth of $13{\mu}m$. This indicates that the projection ablation with a metal mask and a DPSS UV laser could feasibly replace the semi-additive process (SAP).

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Evaluation of IC Electromagnetic Conducted Immunity Test Methods Based on the Frequency Dependency of Noise Injection Path (Noise Injection Path의 주파수 특성을 고려한 IC의 전자파 전도내성 시험 방법에 관한 연구)

  • Kwak, SangKeun;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.4
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    • pp.436-447
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    • 2013
  • In this paper, Integrated circuit(IC) electromagnetic(EM) conducted immunity measurement and simulation using bulk current injection(BCI) and direct power injection(DPI) methods were conducted for 1.8 V I/O buffers. Using the equivalent circuit models developed for IC electromagnetic conducted immunity tests, we investigated the reliability of the frequency region where IC electromagnetic conducted immunity test is performed. The insertion loss for the noise injection path obtained from the simulation indicates that using only one conducted immunity test method cannot provide reliable conducted immunity test for broadband noise. Based on the forward power results, we analyzed the actual amount of EM noise injected to IC. We propose a more reliable immunity test methods for broad band noise.

Design of an Interface System IC for Automobile ABS/TCS (자동차용 ABS/TCS 인터페이스 시스템 IC의 설계)

  • Lee, Sung-Pil;Kim, Chan
    • Journal of the Institute of Convergence Signal Processing
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    • v.7 no.4
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    • pp.195-200
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    • 2006
  • The conventional discrete circuit for ABS/TCS system was examined and the problems of the system were analyzed by computer simulation. In order to improve the performance of ABS/TCS system, interface IC which has error compensation, comparator and under voltage lock-out circuit was designed and their electrical characteristics were investigated. The voltage regulator was included to compensate the temperature variation in the temperature range from $-20^{\circ}C$ to $120^{\circ}C$ for automobile environment. ABS and brake signal were separated using the duty factor of same frequency or different frequencies. UVLO(Under Voltage Lock-Out) circuit and constant current circuit were applied for the elimination of noise, and protection circuit was applied to cut the excess current off. Layout for IC fabrication was designed to enhance the electrical performance of ABS/TCS system. Layout was consisted of 11 masks, arrayed effectively 8 pads to reduce the current loss. We can see that the result of layout simulation was better than the result of bread board.

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Design of the High Brightness LED Driver IC with Enhanced the Output Current Control Function (출력전류 제어 기능이 향상된 고휘도 LED 구동 IC 설계)

  • Song, Ki-Nam;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.593-600
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    • 2010
  • In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.