• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.618-625
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• 2021

In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅_p-well) of 5.0 × 10¹², 4.0 × 10¹², and 3.0 × 10¹² atoms/cm² under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅_p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at V_ex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.426-431
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• 1998

This paper describes electrochemical etch-stop characteristics in THAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in THAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -1.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in THAH/IPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vol.%/pyrazine 0.1g/100ml. thus the elapsed time of etch-stop was reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.203-210
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• 2019

In this work, anodizing behavior of 6xxx series aluminum alloys was studied under constant current density and constant voltage conditions in 20% sulfuric acid solution by V-t curves, I-t curves, thickness measurement, observations of surface appearance and cross-sectional observation of anodizing films. The film growth rate of the anodizing films on Al6063, Al6061 and Al6082 obtained at 20 V were $0.63{\mu}m/min$. $0.46{\mu}m/min$ and $0.38{\mu}m/min$, respectively. Time to the initiation of imperfections at the oxide/substrate interface under constant current condition was shortened and colors of anodizing films became darker with the amount of alloying elements in 6xxx series aluminum alloys. Based upon the experimental results obtained in this work, it is concluded that maximum anodizing film thickness without interfacial defects is reduced with increasing amount of alloying elements and brighter anodizing films can be obtained by decreasing amount of alloying elements in the aluminum alloys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.13-16
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• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.658-664
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• 2015

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.3
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• pp.49-57
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• 2016

This study intended to analyze reinforcement effects of PSC I girder bridges to which prestresses are introduced using V type of external strands. So that series of bridge loading tests are carried out on existing PSC I girder bridge for the cases of before-reinforcement and reinforcement. The measured results from tests being analyzed and compared with the ones from MIDAS structural analyzing program, the reinforcing effects of the reinforcement system adopted in this study were investigated. It is found out that when the V type systems are applied to the bridge girders, the slope of load distribution factor curves become lower improving soundness of bridge upper structure. And also it is confirmed that the reinforcement system in this study can be taken as helpful for improvement of both flexural and shear ability of PSC I girder bridges, as well as dynamic behavior. Furthermore it is found when the elastic pads are applied to the system, dynamic reinforcing effects are maximized.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.139-141
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• 1989

The characteristics of the hollow cathode discharge were investigated. Temperature distribution of the hollow cathode was investigated and I-V curves of the hollow cathode discharge were obtained. In this paper variables are chamber pressure, Ar gas flow rate injected through the cathode tube and the gap distance between cathode and anode. The inter electrode electron temperature and density were measured by Langmuir probe.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.